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2010 – today
- 2015
[c3]- [c2]Shou-Chung Lee, A. S. Oates:
On the voltage dependence of copper/low-k dielectric breakdown. IRPS 2015: 3
2000 – 2009
- 2006
- [j4]A. S. Oates, Shou-Chung Lee:
Electromigration failure distributions of dual damascene Cu /low - k interconnects. Microelectronics Reliability 46(9-11): 1581-1586 (2006) - 2004
- [j3]Merlyne M. De Souza, S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Prasad Chaparala:
Influence of mobility model on extraction of stress dependent source-drain series resistance. Microelectronics Reliability 44(1): 25-32 (2004) - 2003
- [j2]S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Merlyne M. De Souza:
Characterisation of series resistance degradation through charge pumping technique. Microelectronics Reliability 43(4): 617-624 (2003) - 2001
- [j1]Merlyne M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates:
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. Microelectronics Reliability 41(2): 169-177 (2001) - [c1]Wei Li, Qiang Li, J. S. Yuan, Joshua McConkey, Yuan Chen, Sundar Chetlur, Jonathan Zhou, A. S. Oates:
Hot-carrier-Induced Circuit Degradation for 0.18 µm CMOS Technology. ISQED 2001: 284-289
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last updated on 2017-05-30 00:33 CEST by the dblp team