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A. S. Oates

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2010 – today

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2015
[c3]
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  dblp key:
  - conf/irps/LinO15
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M. H. Lin, A. S. Oates:
Mechanisms of electromigration under AC and pulsed-DC stress in Cu/low-k dual damascene interconnects. IRPS 2015: 2
[c2]
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Shou-Chung Lee, A. S. Oates:
On the voltage dependence of copper/low-k dielectric breakdown. IRPS 2015: 3

2000 – 2009

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2006
[j4]
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A. S. Oates, Shou-Chung Lee:
Electromigration failure distributions of dual damascene Cu /low - k interconnects. Microelectronics Reliability 46(9-11): 1581-1586 (2006)
2004
[j3]
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Merlyne M. De Souza, S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Prasad Chaparala:
Influence of mobility model on extraction of stress dependent source-drain series resistance. Microelectronics Reliability 44(1): 25-32 (2004)
2003
[j2]
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S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Merlyne M. De Souza:
Characterisation of series resistance degradation through charge pumping technique. Microelectronics Reliability 43(4): 617-624 (2003)
2001
[j1]
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Merlyne M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates:
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. Microelectronics Reliability 41(2): 169-177 (2001)
[c1]
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  - conf/isqed/LiLYMCCZO01
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Wei Li, Qiang Li, J. S. Yuan, Joshua McConkey, Yuan Chen, Sundar Chetlur, Jonathan Zhou, A. S. Oates:
Hot-carrier-Induced Circuit Degradation for 0.18 µm CMOS Technology. ISQED 2001: 284-289

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