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Makoto Yabuuchi
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Publications
- 2024
- [j10]Yumito Aoyagi, Koji Nii, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48-1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking. IEEE J. Solid State Circuits 59(4): 1225-1234 (2024) - 2023
- [c25]Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking. VLSI Technology and Circuits 2023: 1-2 - 2020
- [c23]Yoshisato Yokoyama, Miki Tanaka, Koji Tanaka, Masao Morimoto, Makoto Yabuuchi, Yuichiro Ishii, Shinji Tanaka:
A 29.2 Mb/mm2 Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit. VLSI Circuits 2020: 1-2 - 2018
- [c20]Yoshisato Yokoyama, Tomohiro Miura, Yukari Ouchi, Daisuke Nakamura, Jiro Ishikawa, Shunya Nagata, Makoto Yabuuchi, Yuichiro Ishii, Koji Nii:
40-nm 64-kbit Buffer/Backup SRAM with 330 nW Standby Power at 65°C Using 3.3 V IO MOSs for PMIC less MCU in IoT Applications. A-SSCC 2018: 9-12 - 2016
- [c18]Yuichiro Ishii, Makoto Yabuuchi, Yohei Sawada, Masao Morimoto, Yasumasa Tsukamoto, Yuta Yoshida, Ken Shibata, Toshiaki Sano, Shinji Tanaka, Koji Nii:
A 5.92-Mb/mm2 28-nm pseudo 2-read/write dual-port SRAM using double pumping circuitry. A-SSCC 2016: 17-20 - [c17]Makoto Yabuuchi, Yohei Sawada, Toshiaki Sano, Yuichiro Ishii, Shinji Tanaka, Miki Tanaka, Koji Nii:
A 6.05-Mb/mm2 16-nm FinFET double pumping 1W1R 2-port SRAM with 313 ps read access time. VLSI Circuits 2016: 1-2 - 2014
- [c12]Shinji Tanaka, Yuichiro Ishii, Makoto Yabuuchi, Toshiaki Sano, Koji Tanaka, Yasumasa Tsukamoto, Koji Nii, Hirotoshi Sato:
A 512-kb 1-GHz 28-nm partially write-assisted dual-port SRAM with self-adjustable negative bias bitline. VLSIC 2014: 1-2 - 2013
- [c10]Koji Nii, Makoto Yabuuchi, Hidehiro Fujiwara, Yasumasa Tsukamoto, Yuichiro Ishii, Tetsuya Matsumura, Yoshio Matsuda:
A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53% standby leakage with multi-Vt asymmetric halo MOS and write assist circuitry. ISQED 2013: 438-441 - 2012
- [c9]Koji Nii, Yasumasa Tsukamoto, Yuichiro Ishii, Makoto Yabuuchi, Hidehiro Fujiwara, Kazuyoshi Okamoto:
A Test Screening Method for 28 nm HK/MG Single-Port and Dual-Port SRAMs Considering with Dynamic Stability and Read/Write Disturb Issues. Asian Test Symposium 2012: 246-251 - [c7]Yuichiro Ishii, Yasumasa Tsukamoto, Koji Nii, Hidehiro Fujiwara, Makoto Yabuuchi, Koji Tanaka, Shinji Tanaka, Yasuhisa Shimazaki:
A 28nm 360ps-access-time two-port SRAM with a time-sharing scheme to circumvent read disturbs. ISSCC 2012: 236-238
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