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ORCIDICICDT 2023: Tokyo, Japan
- International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. IEEE 2023, ISBN 979-8-3503-1931-6
- Ken Takeuchi:
Analog Computation-in-Memory (CiM) for AI Applications. xvi - Yoshiki Yamamoto:
Design and process issues for high yield and reliability in thin BOX FD-SOI. xxix - Kai Tang:
Low-power MEMS-based CMOS Transceivers. xxiii - James Tandon:
Beyond Integer Quantization: Approximate Arithmetic for Machine Learning Accelerators. xviii - Antonio Radogna:
Towards Ultra-fast Time-based Electrochemical Impedance Spectroscopy of Sensors. xxiv - Min Hyuk Park:
Hafnia-based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry. xx - Safumi Suzuki:
Terahertz Resonant-Tunneling Diodes. xl - Yoshio Mita:
Empowering CMOS-VLSI by MEMS Technology - An Example of High-Voltage Photovoltaic Chiplet Integration for Autonomous Micro Robotic Systems. xxxvii - Ryosho Nakane:
Physical reservoir computing toward edge AI hardware. xiii - Wen Liu:
GaN Power Device Technology and monolithic integrated GaN power systems. xxxix - Sam Rogan, Yoshihito Kondo:
RISC-V Is Inevitable. xxxvi - Mingxiang Wang:
Dominant Role of Air Ambient in Dynamic Bending Degradation of Flexible LTPS TFTs. xxviii - Vincent Huard:
Embracing the new era of AI at the edge. xi - Kaizhen Han:
BEOL-compatible Oxide Semiconductor Devices. xxi - Leonardo Gasperini:
Enabling Quantum Imaging applications with CMOS SPAD arrays. xxv - Xiao Yu:
Disturb-Free Operation Scheme and Application for Multilevel Cell Ferroelectric FETs NAND Array. xxxii - Xiaomin Li:
Necessary but non-core laboratory analytical works drives semiconductor industry into a new norm: Labless solution. xiv - Yasumitsu Orii:
Semiconductor Packaging Revolution in the Era of Chiplets. ix - Vita Pi-Ho Hu:
Energy-Efficient SRAM with Emerging Technologies. xxxv - Ran Cheng:
Investigation of Low Temperature Noise and Current Fluctuation for Advanced Transistors: Characterization and Modeling. xxvii - Kai Ni:
Ferro-Electronics: From Memory to Computing. xl - Xuanyao Fong:
Domain-specific computing with non-volatile multi-terminal devices. xxxiv - Shinichi Takagi:
Reservoir computing utilizing ferroelectric-gate-insulator FETs and capacitors. xv - Takahiro Mori:
Silicon Technologies for Quantum Computing. xii - Shuhei Amakawa:
On-chip transmission lines for silicon CMOS 6G: From basics to open questions. xl - Yun Fang:
Millimeter-Wave Dual-Frequency Transformer-based Rectifier. xxii - Chun Zhao:
Artificial Synapses Enabled Neuromorphic Computing: From Blueprints to Reality. xxxviii - Sanghyeon Kim:
Cryogenic InGaAs HEMTs for LNA and Routing Circuits in Quantum Computing. xxvi - Jinshun Bi:
Nanoscale Air Channel Devices for Emerging IC Applications. xxxiii - Christophe Maleville:
Efficient integrated devices are growing on Engineered Substrates. x - Kai Ni:
Multi-Functionalities and Applications of Dual-Port Ferroelectric FET. xxx - Yi Tong:
Wurtzite-Structured Ferroelectric Materials Growth and Film Properties. xxxi - Sylvain Guilley:
Challenges in generating true random numbers considering the variety of corners, aging, and attacks. xix - Bin Gao:
Memristor Based Mixed-Precision Computation-in-Memory System. xvii - Ze Wang, Ruihua Yu, Bin Gao:
Memristor Based Mixed-Accuracy Computation-in-Memory System. 1-5 - James S. Tandon:
Beyond Integer Quantization: Approximate Arithmetic for Machine Learning Accelerators : (Invited Paper). 6-9 - Javad Bahrami, Jean-Luc Danger, Mohammad Ebrahimabadi, Sylvain Guilley, Naghmeh Karimi:
Challenges in Generating True Random Numbers Considering the Variety of Corners, Aging, and Intentional Attacks. 10-15 - Kosei Sekiyama, Isuke Okuma, Wataru Nakayama, Shuxin Lyu, Katsuyuki Morishita, Ken Saito:
Development of Neuromorphic Locomotion Generator with Switching Gait by Light Stimulation for Microrobots. 16-19 - Amartuvshin Bayasgalan, Makoto Ikeda:
A Design of BNN Accelerator using Gate-level Pipelined Self-Synchronous Circuit. 20-24 - Shinichi Takagi, Kasidit Toprasertpong, Eishin Nako, Zeyu Wang, Rikuo Suzuki, Shin-Yi Min, Mitsuru Takenaka, Ryosho Nakane:
Reservoir Computing Utilizing Ferroelectric-Gate-Insulator FETs and Capacitors. 25-28 - Zijie Zheng
, Jiawei Xie, Yiyuan Sun, Ying Xu, Xiaolin Wang, Leming Jiao, Zuopu Zhou, Qiwen Kong, Yue Chen, Xiao Gong:
First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory. 29-33 - Nan He, Haiming Qin, Feng Xu, Hao Zhang, Yang Sheng, Yi Tong:
Insight into Effects of Introducing Ag-In-Zn-S Quantum Dots on Switching Characteristics of TiO2-Based Memristor. 34-36 - Yu Wang, Yanzhong Zhang, Yanji Wang, Xinyue An, Miaocheng Zhang, Xinpeng Wang, Hao Zhang, Rongqing Xu, Yi Tong:
Realization of Artificial Neuron with Firing Saturation Based on Single Memristive Device. 37-40 - Yun Fang, Hao Gao:
Millimeter-Wave Dual-Frequency Transformer-based Rectifier. 41-43 - Kai Tang, Ting Guo, Xiaolin Sun, Chun Zhao, Hao Gao, Yuanjin Zheng:
Low-power MEMS-based CMOS Transceivers. 44-47 - Junqing Liu, Zheng Li, Minghao Fan, Yilun Chen, Atsushi Shirane, Kenichi Okada:
A 60-GHz Transformer-Based Power Amplifier Supporting 5G n263-band Applications. 48-51 - Junzhe Tan, Dongyi Yang, Shiqiang Wu, Yuhao Zhu, Yaoyao Pan, Pengju Cui, Wen Liu:
Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters. 52-56 - Pingyu Cao, Yihua Wu, Yinchao Zhao, Miao Cui:
A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control. 57-60 - Sho Okii, Shinsuke Hara, Akifumi Kasamatsu, Yohtaro Umeda, Kyoya Takano:
39 - 67 GHz CMOS Multistage Power Amplifier With Two-Way Power Stage. 61-63 - Ralph Gerard B. Sangalang, Shih-Heng Luo, Chua-Chin Wang:
A High Resolution And Wide Range Temperature Detector Using 180-nm CMOS Process. 64-67 - Haruto Sugisaki, Ryuichi Nakajima, Shotaro Sugitani, Jun Furuta, Kazutoshi Kobayashi:
Frequency Dependency of Soft Error Rates Based on Dynamic Soft Error Measurements. 68-71 - Keita Yoshida, Ryuichi Nakajima, Shotaro Sugitani, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi:
SEU Sensitivity of PMOS and NMOS Transistors in a 65 nm Bulk Process by α-Particle Irradiation. 72-75 - Haoming Zhang, Shuowei Li, Tetsuya Iizuka:
Dynamic Circuit Characterization and a Single Ring-Oscillator-Based Test Structure for Its Timing Parameter Extraction. 76-79 - Lin Zhao, Chai Kiat Yeo:
Anomalous Wafer Map Detection and Localization using Unsupervised Learning. 80-83 - Masamitsu Tanaka, Yoshihiro Kitagawa, Tetsuro Satoh, Tsuyoshi Yamamoto:
High-Frequency Operation of Low-Power Single-Flux-Quantum Circuits Fabricated Using 250 A/cm2 Nb/AlOx/Nb Planarization Process. 84-87 - Yuyang Zhu, Zunsong Yang, Zhenyu Cheng, Md Shamim Sarker, Hiroyasu Yamahara, Munetoshi Seki, Hitoshi Tabata, Tetsuya Iizuka:
A 1-5GHz Inverter-Based Phase Interpolator with All Digital Control for Spin-Wave Detection Circuit. 88-91 - Zhenyu Cheng, Zunsong Yang, Yuyang Zhu, Md Shamim Sarker, Hiroyasu Yamahara, Munetoshi Seki, Hitoshi Tabata, Tetsuya Iizuka:
Design of 1-5 GHz Two-Stage Noise-Canceling Low-Noise Amplifier with gm-boosting Technique for Spin Wave Detection Circuit. 92-95 - Momoko Fukuda, Makoto Ikeda:
Template-based design optimization for multiple pairing-friendly curve parameters. 96-99 - Zeyu Wang, Makoto Ikeda:
High-Throughput Key Switching Accelerator for Homomorphic Encryption. 100-103 - Vu Trung Duong Le, Hoai Luan Pham, Thi Hong Tran, Quoc Duy Nam Nguyen, Thi Sang Duong, Yasuhiko Nakashima:
Versatile Resource-shared Cryptographic Accelerator for Multi-Domain Applications. 104-107 - Favian Dewantaz, Ida Wahidah, Sofia Naning Hertiana, Danu Dwi Sanjoyo, Sharifah Hafizah Syed Ariffin:
SibProMQTT: Protection of the MQTT Communication Protocol Against Sybil Attacks Applied for IoT Devices. 108-111 - Ziyang Ye, Makoto Ikeda:
Assessing the Vulnerability of Time-Controlled Logic-Loop-Based Circuits to Voltage Fault Injection and Power Monitoring Attacks. 112-115 - Xinze Li, Yuxuan Wu, Qiao Teng, Ying Sun, Xiao Gong, Guillaume Besnard, Christophe Maleville, Olivier Weber, Rui Zhang, Bing Chen, Dawei Gao, Ran Cheng:
Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress. 116-119 - Yi Jiang, Yanning Chen, Fang Liu, Bo Wu, Yongfeng Deng, Junkang Li, Dawei Gao, Rui Zhang:
Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise. 120-123 - Jianjun Li, Tao Du, Wei Li:
The Performance of FRAM Integrated With 3D Trench Hf0.5Zr0.5O2 Ferroelectric Capacitor. 124-126 - Jiajia Chen, Jiani Gu, Zhi Gong, Chengji Jin, Huan Liu, Xiao Yu, Genquan Han:
Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors. 127-130 - Yirui Su, Masao Yanagisawa, Youhua Shi:
Strategy for Improving Cycle of Maximized Energy Output of Triboelectric Nanogenerators. 131-135 - H. Lei, Yixin Cao, Chun Zhao:
Thin-film Transistor-based Tribotronic Artificial Synapse with Neurosensory Behavior. 136-140 - Siyao Yang, Bin Gao, Jianshi Tang, Feng Xu, Peng Yao, He Qian, Huaqiang Wu:
Impact of Programming Process on Temperature Coefficient in Analog RRAM. 141-144 - Godeun Seok, Yunkyung Kim:
A study of scattering structures for high sensitive near-infrared pixels. 145-147 - Xuan Chi, Yubo Wang, Fan Li, Yixiao Huang, Chenruiyuan Yu, Shiqiang Wu, Huiqing Wen, Jiangmin Gu, Ping Zhang, Wen Liu:
The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD Simulation. 148-151 - Shiqiang Wu, Fan Li, Yuhao Zhu, Yixiao Huang, Chenruiyuan Yu, Yubo Wang, Xuan Chi, Huiqing Wen, Wen Liu:
The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs. 152-155 - Roupu Zhu, Chengwei Liu, Yuhao Zhu, Wen Liu, Yi Pei, Man Hoi Wong:
Physics-Based Small-Signal Model of Ga2O3 Hot-Electron Transistor. 156-158 - Jing Yan, Junkang Li, Rui Zhang:
Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs. 159-162
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