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ORCIDIRPS 2020: Dallas, TX, USA
- 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. IEEE 2020, ISBN 978-1-7281-3199-3
- Riad Kabouche, Kathia Harrouche, Etienne Okada
, Farid Medjdoub:
Short-term reliability of high performance Q-band AlN/GaN HEMTs. 1-6 - Minsu Kim, Jeehwan Song, Chris H. Kim:
Reliability Characterization of Logic-Compatible NAND Flash Memory based Synapses with 3-bit per Cell Weights and 1μA Current Steps. 1-4 - Zhiqing Li, Baofu Zhu, Anindya Nath, Meng Miao, Alain Loiseau, You Li, Jeffrey B. Johnson, Souvick Mitra, Robert Gauthier:
Understanding ESD Induced Thermal Mechanism in FinFETs Through Predictive TCAD Simulation. 1-4 - Jun-Kyo Jeong, Jae-Young Sung, Hee-Hun Yang, Hi-Deok Lee, Ga-Won Lee:
Reliability Analysis by Charge Migration of 3D SONOS Flash Memory. 1-5 - Robin Wuytens, Sybren Santermans, Mihir Gupta, Bert Du Bois, Simone Severi, Liesbet Lagae, Wim Van Roy, Koen M. Martens:
Two-Regime Drift in Electrolytically Gated FETs and BioFETs. 1-5 - Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi:
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. 1-5 - Rui Zhang, Zhaocheng Liu, Kexin Yang, Taizhi Liu, Wenshan Cai, Linda Milor:
Inverse Design of FinFET SRAM Cells. 1-6 - Oren Zonensain, Roman Rechter, Robert Kwasnick, Keun-Woo Park, Anisur Rahman, Almog Reshef, Tal Raz, Maxim Levit:
Advanced methods for CPU product reliability modeling and enhancement. 1-5 - Sayak Dutta Gupta, Vipin Joshi, Rajarshi Roy Chaudhuri, Anant kr Singh, Sirsha Guha, Mayank Shrivastava:
On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs. 1-4 - Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert:
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. 1-8 - Bahar Ajdari, Samwel Sekwao, Ricardo Ascázubi, Adam Neale, Norbert Seifert:
On the Correlation of Laser-induced and High-Energy Proton Beam-induced Single Event Latchup. 1-5 - Susanna Yu, Tianshi Liu, Shengnan Zhu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal:
Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs. 1-5 - Krishnaswamy Ramkumar, Venkatraman Prabhakar, Vineet Agrawal, Long Hinh, Swatilekha Saha, Santanu Kumar Samanta, Ravindra M. Kapre:
Reliability Aspects of SONOS Based Analog Memory for Neuromorphic Computing. 1-5 - Jia Hao Lim, Nagarajan Raghavan, Jae Hyun Kwon, Tae Young Lee, Robin Chao, Nyuk Leong Chung, Kazutaka Yamane, Naganivetha Thiyagarajah, Vinayak Bharat Naik, Kin Leong Pey:
Origins and Signatures of Tail Bit Failures in Ultrathin MgO Based STT-MRAM. 1-5 - Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan:
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise. 1-5 - Chen-Yi Su, Mark Armstrong, Sunny Chugh, Mohammed El-tanani, Hannes Greve, Hai Li, Mahjabin Maksud, Benjamin Orr, Christopher Perini, James Palmer, Leif Paulson, Stephen Ramey, James Waldemer, Yang Yang, Dave Young:
Reliability Characterization for 12 V Application Using the 22FFL FinFET Technology. 1-5 - Yi Ram Kim, Allison T. Osmanson, Hossein Madanipour, Choong-Un Kim, Patrick F. Thompson, Qiao Chen:
Effects of UBM Thickness and Current Flow Configuration on Electromigration Failure Mechanisms in Solder Interconnects. 1-5 - Yohei Hiura, Shinichi Miyake, Shigetaka Mori, Koichi Matsumoto, Hidetoshi Ohnuma:
Study of Lower Voltage Protection against Plasma Process Induced Damage by Quantitative Prediction Technique. 1-5 - Alex Ayling, Shudong Huang, Elyse Rosenbaum:
Sub-nanosecond Reverse Recovery Measurement for ESD Devices. 1-8 - Wafa Arfaoui, Germain Bossu, A. Muehlhoff, D. Lipp, R. Manuwald, T. Chen, Tanya Nigam, Mahesh Siddabathula:
A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology. 1-5 - Yang Wang, Chen Wang, Tao Chen, Hao Liu, Chinte Kuo, Ke Zhou, Binfeng Yin, Lin Chen, Qing-Qing Sun:
Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs. 1-5 - Trang Le Dinh Dang, Trinh Dinh Linh, Ngyuen Thanh Dat, Changhong Min, Jinsang Kim, Ik-Joon Chang, Jin-Woo Han:
Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro. 1-5 - Siddarth Sundaresan, Vamsi Mulpuri, Jaehoon Park, Ranbir Singh:
Reliability and Robustness Performance of 1200 V SiC DMOSFETs. 1-4 - Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl:
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. 1-6 - Sandeep R. Bahl, Francisco Baltazar, Yong Xie:
A Generalized Approach to Determine the Switching Lifetime of a GaN FET. 1-6 - Yen-Pu Chen, Bikram Kishore Mahajan, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy, Muhammad Ashraful Alam:
A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors. 1-6 - Luis Soriano, Hector Valencia, Ke-Xun Sun, Ronald Nelson:
Fast Neutron Irradiation Effects on Multiple Gallium Nitride (GaN) Device Reliability in Presence of Ambient Variations. 1-6 - Peng Xiao, Haris Hadziosmanovic, Rong Jiang, Misagh Rostami-asrabad, Stephen Ramey, Ilan Tsamaret:
Reliability Stressing Control Using Jacobian Feedback Kelvin Measurement on Intel Technologies. 1-4 - Koichiro Okamoto, Ryusuke Nebashi, Naoki Banno, Xu Bai, Hideaki Numata, Noriyuki Iguchi, Makoto Miyamura, Hiromitsu Hada, Kazunori Funahashi, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada:
ON-state retention of Atom Switch eNVM for IoT/AI Inference Solution. 1-4 - Sourov Roy, Abu Hanif, Faisal Khan:
Degradation Detection of Power Switches in a Live Three Phase Inverter using SSTDR Signal Embedded PWM Sequence. 1-7 - Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf:
On the impact of mechanical stress on gate oxide trapping. 1-5 - Naohito Suzumura, Kazuyuki Omori, Hideaki Tsuchiya, Hideki Aono, Tomohiro Yamashita:
Impact of Anode-side Defect Generation on Inter-Level TDDB Degradation in Cu/Low-k Damascene Structures. 1-6 - Mireia Bargallo González, Marcos Maestro-Izquierdo, Francesca Campabadal, Samuel Aldana, Francisco Jiménez-Molinos, Juan Bautista Roldán:
Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors. 1-4 - Thomas Aichinger, Matthias Schmidt:
Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs. 1-6 - Daniel B. Habersat, Aivars J. Lelis, Ronald Green:
Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification. 1-4 - Khai Nguyen, Ernie Opiniano, Randolph Mah:
Backside Die-Edge and Underfill Fillet Cracks Induced by Additional Tensile Stress from Increasing Die-to-Package Ratio in Bare-Die FCBGA. 1-4 - Wataru Mizubayashi, Hiroshi Oka, Koichi Fukuda, Yuki Ishikawa, Kazuhiko Endo:
Analysis of charge-to-hot-carrier degradation in Ge pFinFETs. 1-4 - Kuo-Hsuan Meng:
A Method to Analyze Aging Effect on ESD Protection Design. 1-6 - Hang-Ting Lue, Po-Kai Hsu, Keh-Chung Wang, Chih-Yuan Lu:
Introduction of Non-Volatile Computing In Memory (nvCIM) by 3D NAND Flash for Inference Accelerator of Deep Neural Network (DNN) and the Read Disturb Reliability Evaluation : (Invited Paper). 1-6 - Bernhard Ruch, Gregor Pobegen, Christian Schleich, Tibor Grasser:
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping. 1-6 - Tian Shen, Koji Watanabe, Huimei Zhou, Michael Belyansky, Erin Stuckert, Jingyun Zhang, Andrew Greene, Veeraraghavan S. Basker, Miaomiao Wang:
A new technique for evaluating stacked nanosheet inner spacer TDDB reliability. 1-5 - Michael Waltl:
Defect Spectroscopy in SiC Devices. 1-9 - Nagothu Karmel Kranthi, Chirag Garg, Boeila Sampath Kumar, Akram A. Salman, Gianluca Boselli, Mayank Shrivastava:
How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights & Design Guidelines for Self-Protected Concepts. 1-6 - Tobias Kemmer, Michael Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Oliver Ambacher:
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. 1-6 - E. R. Hsieh, H. W. Cheng, Z. H. Huang, C. H. Chuang, S. P. Yang, Steve S. Chung:
A Pulsed RTN Transient Measurement Technique: Demonstration on the Understanding of the Switching in Resistance Memory. 1-4 - Laiqiang Luo, Kalya Shubhakar, Sen Mei, Nagarajan Raghavan, Fan Zhang, Danny Shum, Kin Leong Pey:
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device. 1-6 - Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Phil Mawby:
Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs. 1-10 - Cheyun Lin, Uygar E. Avci, M. A. Blount, Rohit Grover, Jeffery Hicks, R. Kasim, A. Kundu, C. M. Pelto, C. Ryder, Anthony Schmitz, K. Sethi, D. Seghete, D. J. Towner, A. J. Welsh, J. Weber, C. Auth:
Reliability Characteristics of a High Density Metal- Insulator-Metal Capacitor on Intel's 10+ Process. 1-4 - Hyeong-Sub Song, Sunil Babu Eadi, Hyun-Dong Song, Hyun-Woong Choi, Ga-Won Lee, Hi-Deok Lee:
Investigation of Random Telegraph Noise Characteristics with Intentional Hot Carrier Aging. 1-4 - Rosana Rodríguez, Albert Crespo-Yepes, Javier Martín-Martínez, Montserrat Nafría, Xavier Aragonès, Diego Mateo, Enrique Barajas:
Experimental Monitoring of Aging in CMOS RF Linear Power Amplifiers: Correlation Between Device and Circuit Degradation. 1-7 - Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng:
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. 1-9 - Jeevesh Kumar, Ansh, Asha Yadav, Anant Singh, Andrew Naclerio, Dmitri N. Zakharov, Piran Kidambi, Mayank Shrivastava:
Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress. 1-4 - Lyuan Xu, Jingchen Cao, John Brockman, Carlo Cazzaniga, Christopher Frost, Shi-Jie Wen, Rita Fung, Bharat L. Bhuva:
Thermal Neutron Induced Soft Errors in 7-nm Bulk FinFET Node. 1-5 - Ansh, Gaurav Sheoran, Jeevesh Kumar, Mayank Shrivastava:
First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel. 1-4 - Marina Yamaguchi, Shosuke Fujii, Kensuke Ota, Masumi Saitoh:
Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning. 1-6 - David C. Zhou, William Li, Jingyu Shen, Leilei Chen, Thomas Zhao, Kent Lin, Martin Zhang, Larry Chen, H. C. Chiu, Jeff Zhang, Roy K.-Y. Wong:
Reliability of 200mm E-mode GaN-on-Si Power HEMTs. 1-3 - Elias Reese:
The Role of RF Operational Life Testing in Evaluating III-V Devices Addressing RF Through Millimeter-wave Applications. 1-4 - Ketul B. Sutaria, Jihan Standfest, Inanc Meric, Amirhossein H. Davoody, Swaroop Kumar Namalapuri, Trinadh Mutyala, Supriya P., Balkaran Gill, Stephen Ramey, Jeffery Hicks:
Novel Re-configurable Circuits For Aging Characterization: Connecting Devices to Circuits. 1-5 - Martina Gerlach, Peter Seidel, Josef Lutz:
Specific aspects regarding evaluation of power cycling tests with SiC devices. 1-6 - Andreas Martin, Angelika Kamp:
A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs. 1-9 - Jordan Locati, Vincenzo Della Marca, Christian Rivero, Arnaud Régnier, Stephan Niel, Karine Coulié:
AC stress reliability study of a new high voltage transistor for logic memory circuits. 1-5 - Xin Ju, Diing Shenp Ang:
Gate-Oxide Trapping Enabled Synaptic Logic Transistor. 1-6 - Hai Jiang, Hyun-Chul Sagong, Jinju Kim, Hyewon Shim, Yoohwan Kim, Junekyun Park, Taiki Uemura, Yongsung Ji, Taeyoung Jeong, Dongkyun Kwon, Hwasung Rhee, Sangwoo Pae, Brandon Lee:
Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology. 1-5 - Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher:
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. 1-6 - Simon Schlipf, André Clausner, Jens Paul, Simone Capecchi, Laura Wambera, Karsten Meier, Ehrenfried Zschech:
Nanoindentation to investigate IC stability using ring oscillator circuits as a CPI sensor. 1-6 - Mauro Ciappa, Marco Pocaterra:
Measurement of the Pre-Breakdown Characteristics in Silicon Carbide Power Devices by the Use of Radioactive Gamma Sources. 1-7 - Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu:
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. 1-6 - Jyotika Athavale, Andrea Baldovin, Michael Paulitsch:
Trends and Functional Safety Certification Strategies for Advanced Railway Automation Systems. 1-7 - Jing-Chyi Liao, Paul Ko, M. H. Hsieh, Zheng Zeng:
Self-healing LDMOSFET for high-voltage application on high-k/metal gate CMOS process. 1-3 - John M. McGlone, Guy Brizar, Daniel Vanderstraeten, Dorai Iyer, Sallie Hose, Jeff P. Gambino:
Effect of Residual TiN on Reliability of Au Wire Bonds during High Temperature Storage. 1-5 - Dongyoung Kim, Adam J. Morgan, Nick Yun, Woongje Sung, Anant Agarwal, Robert Kaplar:
Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness. 1-6 - Weishen Chu, Laura Spinella, Dwayne R. Shirley, Paul S. Ho:
Effects of Wiring Density and Pillar Structure on Chip Package Interaction for Advanced Cu Low-k Chips. 1-4 - Kyong Jin Hwang, Sagar Premnath Karalkar, Vishal Ganesan, Sevashanmugam Marimuthu, Alban Zaka, Tom Herrmann, Bhoopendra Singh, Robert Gauthier:
Design Optimization of MV-NMOS for ESD Self-protection in 28nm CMOS technology. 1-4 - Subrat Mishra, Pieter Weckx, Ji-Yung Lin, Ben Kaczer, Dimitri Linten, Alessio Spessot, Francky Catthoor:
Fast & Accurate Methodology for Aging Incorporation in Circuits using Adaptive Waveform Splitting (AWS). 1-5 - Venkata Chaitanya Krishna Chekuri, Arvind Singh, Nael Mizanur Rahman, Edward Lee, Saibal Mukhopadhyay:
Aging Challenges in On-chip Voltage Regulator Design. 1-8 - Alicja Lesniewska, Philippe J. Roussel, Davide Tierno, Victor Vega-Gonzalez, Marleen H. van der Veen, Patrick Verdonck, Nicolas Jourdan, Christopher J. Wilson, Zsolt Tökei, Kris Croes:
Dielectric Reliability Study of 21 nm Pitch Interconnects with Barrierless Ru Fill. 1-6 - Nian-Jia Wang, Kuan-Yi Lee, Hsin-Yi Lin, Wei-Hao Hsiao, Ming-Yi Lee, Li-Kuang Kuo, Ding-Jhang Lin, Yen-Hai Chao, Chih-Yuan Lu:
Statistical Analysis of Bit-Errors Distribution for Reliability of 3-D NAND Flash Memories. 1-5 - Govind Bajpai, Aniket Gupta, Om Prakash, Girish Pahwa, Jörg Henkel, Yogesh Singh Chauhan, Hussam Amrouch:
Impact of Radiation on Negative Capacitance FinFET. 1-5 - Don A. Gajewski:
Challenges and Peculiarities in Developing New Standards for SiC. 1-5 - Tae Young Lee, Kazutaka Yamane, Lee Yong Hau, Robin Chao, Nyuk Leong Chung, Vinayak Bharat Naik, K. Sivabalan, Jae Hyun Kwon, Jia Hao Lim, Wah-Peng Neo, Kevin Khua, Naganivetha Thiyagarajah, Suk Hee Jang, Behtash Behin-Aein, Eng-Huat Toh, Yuichi Otani, Dinggui Zeng, Nivetha Balasankaran, Lian Choo Goh, Timothy Ling, Jay Hwang, Lei Zhang, Rachel Low, Soon Leng Tan, Chim Seng Seet, Jia Wen Ting, Stanley Ong, Young Seon You, Swee Tuck Woo, Elgin Quek, Soh Yun Siah:
Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production. 1-4 - Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho:
Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. 1-8 - Assaad El Helou, Marko J. Tadjer, Karl D. Hobart, Peter E. Raad:
Effects of Thermal Boundary Resistance on the Thermal Performance of GaN HEMT on Diamond. 1-4 - Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann, Michél Simon-Najasek, David Poppitz:
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. 1-10 - Chetan Prasad, Sunny Chugh, Hannes Greve, I-chen Ho, Enamul Kabir, Cheyun Lin, Mahjabin Maksud, Steven R. Novak, Benjamin Orr, Keun Woo Park, Anthony Schmitz, Zhizheng Zhang, Peng Bai, Doug B. Ingerly, Emre Armagan, Hsinwei Wu, Patrick N. Stover, Lance Hibbeler, Michael O'Day, Daniel Pantuso:
Silicon Reliability Characterization of Intel's Foveros 3D Integration Technology for Logic-on-Logic Die Stacking. 1-5 - Kin P. Cheung:
Anomalous accelerated negative-bias- instability (NBI) at low drain bias. 1-3 - Somayyeh Rahimi, Christian Schmidt, Joy Y. Liao, Howard Lee Marks, Kyung Mo Shin:
Impact of X-Ray Radiation on the Reliability of Logic Integrated Circuits. 1-4 - Juan Bautista Roldán, David Maldonado, Francisco Jiménez-Molinos, Christian Acal, Juan Eloy Ruiz-Castro, Ana M. Aguilera, Fei Hui, J. Kong, Y. Shi, Xu Jing, Chao Wen, Marco Antonio Villena, Mario Lanza:
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages. 1-5 - W. Rhett Davis, Colin Shaw, Ahmed Ramadan Hassan:
How to write a compact reliability model with the Open Model Interface (OMI). 1-2 - Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra:
Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. 1-6 - Jeffrey Zhang, Antai Xu, Daniel Gitlin, Desmond Yeo:
Dynamic vs Static Burn-in for 16nm Production. 1-3 - Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer:
Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. 1-4 - Inanc Meric, Stephen Ramey, Steven R. Novak, S. Gupta, S. P. Mudanai, Jeffrey Hicks:
Modeling Framework for Transistor Aging Playback in Advanced Technology Nodes. 1-6 - Nilotpal Choudhury, Narendra Parihar, Souvik Mahapatra:
Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range. 1-5 - Chieh Roger Lo, Teng-Hao Yeh, Wei-Chen Chen, Hang-Ting Lue, Keh-Chung Wang, Chih-Yuan Lu, Yao-Wen Chang, Yung-Hsiang Chen, Chu-Yung Liu:
Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution. 1-6 - P. Srinivasan, Paul Colestock, Thomas Samuels, Stephen Moss, Fernando Guarin, Byoung Min:
A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications. 1-4 - Rajat Sinha, Prasenjit Bhattacharya, Sanjiv Sambandan, Mayank Shrivastava:
Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress Conditions. 1-6 - Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Shengrui Xu, Xiaohua Ma, Jincheng Zhang, Yue Hao, Linlin Xu, Jiangnan Dai, Peixian Li:
Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. 1-4 - Rahul R. Potera, Tony Witt, Yongju Zheng:
Analysis of Transient HTRB Leakage in a SiC Field Ring Termination. 1-5 - Mary A. Miller, Edward I. Cole, Garth M. Kraus, Perry J. Robertson:
At-Speed Defect Localization by Combining Laser Scanning Microscopy and Power Spectrum Analysis. 1-5 - Olalla Varela Pedreira, Michele Stucchi, Anshul Gupta, Victor Vega-Gonzalez, Marleen van der Veen, Stephane Lariviere, Christopher J. Wilson, Zsolt Tökei, Kristof Croes:
Metal reliability mechanisms in Ruthenium interconnects. 1-7 - Rodolfo A. Rodriguez-Davila, Richard A. Chapman, Massimo Catalano, Manuel Quevedo-Lopez, Chadwin D. Young:
Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3. 1-5 - Aniket Gupta, Kai Ni, Om Prakash, Xiaobo Sharon Hu, Hussam Amrouch:
Temperature Dependence and Temperature-Aware Sensing in Ferroelectric FET. 1-5 - Tom Bonifield, Honglin Guo, Jeff West, Hisashi Shichijo, Talha Tahir:
High Frequency TDDB of Reinforced Isolation Dielectric Systems. 1-4 - Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer:
A Compact Physics Analytical Model for Hot-Carrier Degradation. 1-7 - Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan:
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. 1-6 - Lyuan Xu, Jingchen Cao, Shi-Jie Wen, Rita Fung, Jamie Markevitch, Dennis R. Ball, Bharat L. Bhuva:
High-Current State triggered by Operating-Frequency Change. 1-4 - Kai Ni, Aniket Gupta, Om Prakash, Simon Thomann, Xiaobo Sharon Hu, Hussam Amrouch:
Impact of Extrinsic Variation Sources on the Device-to-Device Variation in Ferroelectric FET. 1-5 - Tae-Young Jeong, Miji Lee, Yunkyung Jo, Jinwoo Kim, Min Kim, Myungsoo Yeo, Jinseok Kim, Hyunjun Choi, Joosung Kim, Yoojin Jo, Yongsung Ji, Taiki Uemura, Hai Jiang, Dongkyun Kwon, HwaSung Rhee, Sangwoo Pae, Brandon Lee:
Reliability on EUV Interconnect Technology for 7nm and beyond. 1-4 - Xavier Federspiel, Cheikh Diouf, Florian Cacho, Emmanuel Vincent:
Comparison of variability of HCI induced drift for SiON and HKMG devices. 1-5 - Chen Wu, Adrian Vaisman Chasin, Steven Demuynck, Naoto Horiguchi, Kris Croes:
Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects. 1-6 - Joseph P. Kozak, Ruizhe Zhang, Jingcun Liu, Khai D. T. Ngo, Yuhao Zhang:
Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching. 1-6 - Taiki Uemura, Byungjin Chung, Jeongmin Jo, Hai Jiang, Yongsung Ji, Tae-Young Jeong, Rakesh Ranjan, Seungbae Lee, Hwasung Rhee, Sangwoo Pae, Euncheol Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM. 1-4 - Betting Wehring, Raik Hoffmann, Lukas Gerlich, Malte Czernohorsky, Benjamin Uhlig, Robert Seidel, Tobias Barchewitz, Frank Schlaphof, Lutz Meinshausen, Christoph Leyens:
BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms. 1-5 - Dong Ji, Burcu Ercan, Garret Benson, A. K. M. Newaz, Srabanti Chowdhury:
Robust avalanche in GaN leading to record performance in avalanche photodiode. 1-4 - James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis:
Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. 1-4 - Shifan Gao, Yu Cong, Zeyu Zhang, Xiang Qiu, Choonghyun Lee, Yi Zhao:
Superior Data Retention of Programmable Linear RAM (PLRAM) for Compute-in-Memory Application. 1-5 - Clement Huang, Alex Juan, K. C. Su:
Stress Induced Voiding Behavior of Electroplated Copper Thin Films in Highly Scaled Cu/low-k interconnects. 1-3 - Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. 1-5 - Kuan-Ting Chen, C. Lo, Y.-Y. Lin, C.-Y. Chueh, C. Chang, G.-Y. Siang, Y.-J. Tseng, Y.-J. Yang, F.-C. Hsieh, S.-H. Chang, H. Liang, S.-H. Chiang, J.-H. Liu, Y.-D. Lin, P.-C. Yeh, C.-Y. Wang, H.-Y. Yang, P.-J. Tzeng, M.-H. Liao, Shu-Tong Chang, Y.-Y. Tseng, Min-Hung Lee:
Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory. 1-4 - Yongsung Ji, Hyunjae Goo, Jungman Lim, Tae-Young Jeong, Taiki Uemura, Gun Rae Kim, Boil Seo, Seungbae Lee, Goeun Park, Jeongmin Jo, Sang-Il Han, Kilho Lee, Junghyuk Lee, Sohee Hwang, Daesop Lee, Suksoo Pyo, Hyun Taek Jung, Shinhee Han, Seungmo Noh, Kiseok Suh, Sungyoung Yoon, Hyeonwoo Nam, Hyewon Hwang, Hai Jiang, J. W. Kim, D. Kwon, Yoonjong Song, K. H. Koh, Hwasung Rhee, Sangwoo Pae, E. Lee:
Reliability of Industrial grade Embedded-STT-MRAM. 1-3 - Kuilong Yu, Xiaojuan Zhu, Rui Fang, Tingting Ma, Kun Han, Zhongyi Xia:
Hybrid HCI Degradation in Sub-micron NMOSFET due to Mixed Back-end Process Damages. 1-4 - Wen Yang, Jiann-Shiun Yuan, Balakrishnan Krishnan, An-Jye Tzou, Wen-Kuan Yeh:
Substrate Bias Effect on Dynamic Characteristics of a Monolithically Integrated GaN Half-Bridge. 1-5 - Wang Liao, Kojiro Ito, Yukio Mitsuyama, Masanori Hashimoto:
Characterizing Energetic Dependence of Low-Energy Neutron-induced MCUs in 65 nm bulk SRAMs. 1-5 - Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan, Kin Leong Pey:
Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films. 1-7 - Heung-Kook Ko, Sena Park, Jihyun Ryu, Sung Ryul Kim, Giwon Lee, Dongjoon Lee, Sangwoo Pae, Euncheol Lee, Yongsun Ji, Hai Jiang, Taeyoung Jeong, Taiki Uemura, Dongkyun Kwon, Hyungrok Do, Hyungu Kahng, Yoon-Sang Cho, Jiyoon Lee, Seoung Bum Kim:
Early Diagnosis and Prediction of Wafer Quality Using Machine Learning on sub-10nm Logic Technology. 1-5 - Harumi Seki, Yasushi Nakasaki, Yuichiro Mitani:
Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation. 1-7 - Shanmuganathan Palanisamy, Josef Lutz, R. Boldyrjew-Mast, Thomas Basler:
Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress. 1-6 - Peter Friedrichs:
Ruggedness of SiC devices under extreme conditions. 1-5 - Yiming Qu, Jiwu Lu, Junkang Li, Zhuo Chen, Jie Zhang, Chunlong Li, Shiuh-Wuu Lee, Yi Zhao:
In-Situ Monitoring of Self-Heating Effect in Aggressively Scaled FinFETs and Its Quantitative Impact on Hot Carrier Degradation Under Dynamic Circuit Operation. 1-6 - Linglin Jing, Rui Gao, Zhigang Ji, Runsheng Wang:
"Shift and Match" (S...M) method for channel mobility correction in degraded MOSFETs. 1-8 - Chang Cai, Tianqi Liu, Jie Liu, Gengsheng Chen, Luchang Ding, Kai Zhao, Bingxu Ning, Mingjie Shen:
Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs. 1-5 - Victor M. van Santen, Simon Thomann, Chaitanya Pasupuleti, Paul R. Genssler, Narendra Gangwar, Uma Sharma, Jörg Henkel, Souvik Mahapatra, Hussam Amrouch:
BTI and HCD Degradation in a Complete 32 × 64 bit SRAM Array - including Sense Amplifiers and Write Drivers - under Processor Activity. 1-7 - Rohit Grover, Tony Acosta, C. AnDyke, Emre Armagan, C. Auth, Sunny Chugh, K. Downes, M. Hattendorf, N. Jack, S. Joshi, R. Kasim, Gerald S. Leatherman, S.-H. Lee, C.-Y. Lin, A. Madhavan, H. Mao, A. Lowrie, G. Martin, G. McPherson, Pinakpani Nayak, Adam Neale, D. Nminibapiel, Benjamin Orr, James Palmer, C. M. Pelto, S. S. Poon, I. Post, Tanmoy Pramanik, Anisur Rahman, Stephen Ramey, Norbert Seifert, K. Sethi, Anthony Schmitz, H. Wu, A. Yeoh:
A Reliability Overview of Intel's 10+ Logic Technology. 1-6 - Dmitry Goloubev, Shi-Jie Wen, Donald Allen, Ranjani Ram, Firdous Bano, Nithin Guruswamy, James Turman:
Use of Silicon-based Sensors for System Reliability Prediction. 1-6 - Amartya Ghosh, Jifa Hao, Michael Cook, Chris Kendrick, Samia A. Suliman, Gavin D. R. Hall, Tom Kopley, Osama O. Awadelkarim:
Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs. 1-4 - Peter C. Paliwoda, Mohamed A. Rabie, Oscar D. Restrepo, Eduardo Cruz Silva, E. Kaltalioglu, Fernando Guarin, Kenneth Barnett, Jeffrey B. Johnson, William Taylor, Myra Boenke, Byoung Min:
Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications. 1-5 - Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal:
Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs. 1-5 - Nikolaos Papandreou, Haralampos Pozidis, Nikolas Ioannou, Thomas P. Parnell, Roman A. Pletka, Milos Stanisavljevic, Radu Stoica, Sasa Tomic, Patrick Breen, Gary A. Tressler, Aaron Fry, Timothy Fisher, Andrew Walls:
Open Block Characterization and Read Voltage Calibration of 3D QLC NAND Flash. 1-6 - David Maldonado, Juan Bautista Roldán, Andrés M. Roldán, Francisco Jiménez-Molinos, Fei Hui, Y. Shi, Xu Jing, Chao Wen, Mario Lanza:
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks. 1-5 - Artsiom Balakir, Alan Yang, Elyse Rosenbaum:
An Interpretable Predictive Model for Early Detection of Hardware Failure. 1-5 - Ruizhe Zhang, Joseph P. Kozak, Jingcun Liu, Ming Xiao, Yuhao Zhang:
Surge Energy Robustness of GaN Gate Injection Transistors. 1-7 - Evelyn Landman, Noam Brousard, Tamar Naishlos:
A novel approach to in-field, in-mission reliability monitoring based on Deep Data. 1-8 - William A. Hubbard, Zachary Lingley, Jesse Theiss, Miles Brodie, Brendan Foran:
STEM EBIC for High-Resolution Electronic Characterization. 1-5 - M. H. Hsieh, W. S. Chiang, Harry H. Chen, M. Z. Lin, M. J. Lin:
Comprehensive Quality and Reliability Management for Automotive Product. 1-5 - Chao-Yang Ke, Ming-Dou Ker:
Over-Voltage Protection on the CC Pin of USB Type-C Interface against Electrical Overstress Events. 1-5 - Md. Mehedi Hasan, Md Raquibuzzaman, Indranil Chatterjee, Biswajit Ray:
Radiation Tolerance of 3-D NAND Flash Based Neuromorphic Computing System. 1-4 - Nagothu Karmel Kranthi, Boeila Sampath Kumar, Akram A. Salman, Gianluca Boselli, Mayank Shrivastava:
Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. 1-5 - Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. 1-4 - Maurits J. de Jong, Cora Salm, Jurriaan Schmitz:
Effect of Ambient on the Recovery of Hot-Carrier Degraded Devices. 1-6 - Adrian Vaisman Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer:
Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. 1-6 - Andrew M. Keller, Jared Anderson, Michael J. Wirthlin, Shi-Jie Wen, Rita Fung, Conner Chambers:
Using Partial Duplication With Compare to Detect Radiation-Induced Failure in a Commercial FPGA-Based Networking System. 1-6 - Premachandran CS, Salvatore Cimino, Manjunatha Prabhu:
Efficient Bidirectional protection structure for Plasma induced damage (PID) and Electrostatic discharge (ESD) for 3D IC Integration. 1-5 - Rui Gao, Mehzabeen Mehedi, Haibao Chen, Xinsheng Wang, Jianfu Zhang, Xiaoling Lin, Zhiyuan He, Yiqiang Chen, Dengyun Lei, Yun Huang, Yunfei En, Zhigang Ji, Runsheng Wang:
A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs. 1-5 - Clyde Dunn, John MacPeak, Sean Bo, Brian Kirkpatrick, Brian Horning, Tad Grider, Corey O'Brien, Steve Heinrich-Barna, Armando Vigil, Jon Nafziger, Lyndon Preiss, Kelly DeShields, Viktor Markov, JinHo Kim, Nhan Do, Alexander Kotov:
Program Disturb Mechanism in Embedded SuperFlash® Technology. 1-5 - Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer:
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. 1-7 - Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere:
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. 1-5 - Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl:
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. 1-6 - Changbeom Woo, Shinkeun Kim, Jaeyeol Park, Hyungcheol Shin, Haesoo Kim, Gil-Bok Choi, Moon-Sik Seo, Keum Hwan Noh:
Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories. 1-6 - Jae-Gyung Ahn, Ping-Chin Yeh, Jonathan Chang:
Estimation of Product Reliability using TDDB Simulation and Statistical EM Method. 1-6 - Sarath Mohanachandran Nair, Rajendra Bishnoi, Mehdi B. Tahoori, Houman Zahedmanesh, Kristof Croes, Kevin Garello, Gouri Sankar Kar, Francky Catthoor:
Physics based modeling of bimodal electromigration failure distributions and variation analysis for VLSI interconnects. 1-5 - Rakesh Ranjan, Charles B. LaRow, Ki-Don Lee, Minhyo Kang, Pavitra R. Perepa, Md. Shahriar Rahman, Bong Ki Lee, David Moreau, Carolyn Cariss-Daniels, Timothy Basford, Colby Callahan, Maihan Nguyen, Gil Heyun Choi, Hyunchul Sagong, HwaSung Rhee:
Trap Density Modulation for IO FinFET NBTI Improvement. 1-5 - M. Monishmurali, Milova Paul, Mayank Shrivastava:
Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs. 1-6 - Paul Colestock, P. Srinivasan, Fernando Guarin:
Silicon Based RF Reliability Challenges for 5G Communications. 1-4 - Tian Shi Zhao, Chun Zhao, Ivona Z. Mitrovic, Eng Gee Lim, Li Yang, Chenghu Qiu, Ce Zhou Zhao:
Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors. 1-4 - Chung-Shuo Lee, Pavan Kumar Vaitheeswaran, Ganesh Subbarayan, Young-Joon Park, Jayhoon Chung, Srikanth Krishnan:
Reliability of Metal-Dielectric Structures Under Intermittent Current Pulsing. 1-6 - Shin-ichiro Abe, Tatsuhiko Sato, Junya Kuroda, Seiya Manabe, Yukinobu Watanabe, Wang Liao, Kojiro Ito, Masanori Hashimoto, Masahide Harada, Kenichi Oikawa, Yasuhiro Miyake:
Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets. 1-7 - Christopher H. Bennett, T. Patrick Xiao, Ryan Dellana, Ben Feinberg, Sapan Agarwal, Matthew J. Marinella, Vineet Agrawal, Venkatraman Prabhakar, Krishnaswamy Ramkumar, Long Hinh, Swatilekha Saha, Vijay Raghavan, Ramesh Chettuvetty:
Device-aware inference operations in SONOS nonvolatile memory arrays. 1-6 - Longda Zhou, Qingzhu Zhang, Hong Yang, Zhigang Ji, Zhaohao Zhang, Renren Xu, Huaxiang Yin, Wenwu Wang:
Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs. 1-6 - Wen Yang, Nicholas Stoll, Jiann-Shiun Yuan:
ESD Robustness of GaN-on-Si Power Devices under Substrate Biases by means of TLP/VFTLP Tests. 1-5 - Wriddhi Chakraborty, Uma Sharma, Suman Datta, Souvik Mahapatra:
Hot Carrier Degradation in Cryo-CMOS. 1-5 - Yao-Feng Chang, James A. O'Donnell, Tony Acosta, Roza Kotlyar, Albert B. Chen, Pedro A. Quintero, Nathan Strutt, Oleg Golonzka, Chris Connor, Jeff Hicks:
eNVM RRAM reliability performance and modeling in 22FFL FinFET technology. 1-4 - Wonbo Shim, Yandong Luo, Jae-sun Seo, Shimeng Yu:
Impact of Read Disturb on Multilevel RRAM based Inference Engine: Experiments and Model Prediction. 1-5 - Jian Liu, Divya Acharya, Nathaniel Peachey:
Triggering Optimization on NAND ESD Clamp and Its ESD Protection IO Scheme for CMOS Designs. 1-6 - Ryo Akimoto, Rihito Kuroda, Akinobu Teramoto, Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa:
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes. 1-6 - Charles Mackin, Pritish Narayanan, Stefano Ambrogio, Hsinyu Tsai, Katie Spoon, Andrea Fasoli, An Chen, Alexander M. Friz, Robert M. Shelby, Geoffrey W. Burr:
Neuromorphic Computing with Phase Change, Device Reliability, and Variability Challenges. 1-10 - Madankumar Sampath, Dallas T. Morisette, James A. Cooper:
Constant-Gate-Charge Scaling for Increased Short-Circuit Withstand Time in SiC Power Devices. 1-4 - Taiki Uemura, Byungjin Chung, Jeongmin Jo, Hai Jiang, Yongsung Ji, Tae-Young Jeong, Rakesh Ranjan, Youngin Park, Kiil Hong, Seungbae Lee, Hwasung Rhee, Sangwoo Pae, Euncheol Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET. 1-5 - Thong Tran, Sudheer Reddy Gundala, Komal Soni, Aaron Baker, Adam Fogle, Sandhya Chandrashekhar:
No Trouble Found (NTF) Customer Return Analysis. 1-6 - Jingchen Cao, Lyuan Xu, Shi-Jie Wen, Rita Fung, Balaji Narasimham, Lloyd W. Massengill, Bharat L. Bhuva:
Temperature Dependence of Single-Event Transient Pulse Widths for 7-nm Bulk FinFET Technology. 1-5 - Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet, Davide Crotti, Dimitri Linten, Gouri Sankar Kar:
Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs. 1-5 - Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser:
Similarities and Differences of BTI in SiC and Si Power MOSFETs. 1-7 - Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, Damien Querlioz:
Embracing the Unreliability of Memory Devices for Neuromorphic Computing. 1-5
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