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ORCIDIRPS 2021: Monterey, CA, USA
- IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. IEEE 2021, ISBN 978-1-7281-6893-7
- James Palmer, Galor Zhang, Justin R. Weber, Cheyun Lin, Christopher Perini, Rahim Kasim:
Intrinsic Reliability of BEOL interlayer dielectric. 1-2 - Emma R. Schmidgall, Flavio Griggio, George H. Thiel, Sherman E. Peek, Bhargav Yelamanchili, Archit Shah, Vaibhav Gupta, John A. Sellers, Michael C. Hamilton, David B. Tuckerman, Samuel d'Hollosy:
Reliability Characterization of a Flexible Interconnect for Cryogenic and Quantum Applications. 1-7 - Houman Zahedmanesh
, Olalla Varela Pedreira, Zsolt Tokei, Kristof Croes:
Electromigration limits of copper nano-interconnects. 1-6 - Gokul Krishnan, Jingbo Sun, Jubin Hazra, Xiaocong Du, Maximilian Liehr, Zheng Li, Karsten Beckmann, Rajiv V. Joshi, Nathaniel C. Cady, Yu Cao:
Robust RRAM-based In-Memory Computing in Light of Model Stability. 1-5 - Milan Shah, Yujie Zhou, David LaFonteese, Elyse Rosenbaum:
Considerations in High Voltage Lateral ESD PNP Design. 1-10 - Shinhee Han, Junghyuk Lee, Kiseok Suh, Kyungtae Nam, Daeeun Jeong, Sechung Oh, Sohee Hwang, Yongsung Ji, Kilho Lee, Kangho Lee, Yoonjong Song, Yeongki Hong, Gitae Jeong:
Reliability of STT-MRAM for various embedded applications. 1-5 - Abhitosh Vais, Brent Hsu, Olga Syshchyk, Hao Yu, AliReza Alian, Yves Mols, Komal Vondkar Kodandarama, Bernardette Kunert, Niamh Waldron, Eddy Simoen, Nadine Collaert:
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. 1-5 - NamHyuk Yang, JinHwan Kim, GeonGu Park, ChulHyuk Kwon, SeungTaek Lee, SangWoo Pae, HooSung Kim, SangWon Hwang:
A Study on System Level UFS M-PHY Reliability Measurement Method Using RDVS. 1-7 - Elena Fabris, Matteo Borga, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. 1-8 - Thomas Neyer, Martin Domeij, Hrishikesh Das, Swapna Sunkari:
Is there a perfect SiC MosFETs Device on an imperfect crystal? 1-6 - Mauro J. Kobrinsky, Rahim Kasim:
Back End Of Line opportunities and reliability challenges for future technology nodes. 1-2 - Juan Bautista Roldán, David Maldonado, Francisco J. Alonso, Andrés M. Roldán, Fei Hui, Yuanyuan Shi, Francisco Jiménez-Molinos, Ana M. Aguilera, Mario Lanza:
Time series modeling of the cycle-to-cycle variability in h-BN based memristors. 1-5 - Taiki Uemura, Byungjin Chung, Jeongmin Jo, Mijoung Kim, Dalhee Lee, Gunrae Kim, Seungbae Lee, Taesjoong Song, Hwasung Rhee, Brandon Lee, Jaehee Choi:
Soft-Error Susceptibility in Flip-Flop in EUV 7 nm Bulk-FinFET Technology. 1-7 - Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou:
"Pinch to Detect": A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs. 1-5 - Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan:
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories. 1-6 - Tarun Samadder, Satyam Kumar, Karansingh Thakor, Souvik Mahapatra:
A Theoretical Framework for Trap Generation and Passivation in NAND Flash Tunnel Oxide During Distributed Cycling and Retention Bake. 1-6 - Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang:
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. 1-7 - Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer:
Physics-based device aging modelling framework for accurate circuit reliability assessment. 1-6 - Tadeu Mota Frutuoso, Jose Lugo-Alvarez, Xavier Garros, Laurent Brunet, Joris Lacord, Louis Gerrer, Mikaël Cassé, Edoardo Catapano, Claire Fenouillet-Béranger, François Andrieu, Fred Gaillard, Philippe Ferrari:
Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. 1-5 - Gang-Jun Kim, Moonjee Yoon, SungHwan Kim, Myeongkyu Eo, Shinhyung Kim, Taehun You, Namhyun Lee, Kijin Kim, Sangwoo Pae:
The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress. 1-4 - Dongyoung Kim, Nick Yun, Woongje Sung:
Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study. 1-4 - Chloe Troussier, Johan Bourgeat, Blaise Jacquier, Emmanuel Simeu, Jean-Daniel Arnould:
Estimation of Oxide Breakdown Voltage During a CDM Event Using Very Fast Transmission Line Pulse and Transmission Line Pulse Measurements. 1-5 - Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni:
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. 1-2 - Lieyi Sheng, Ihsiu Ho:
Universal Impacts of Local Electric Fields on the Projected Dielectric Lifetime. 1-6 - Chao-Yang Chen, Jian-Hsing Lee, Karuna Nidhi, Tzer-Yaa Bin, Geeng-Lih Lin, Ming-Dou Ker:
Study on the Guard Rings for Latchup Prevention between HV-PMOS and LV-PMOS in a 0.15-µm BCD Process. 1-4 - Robin Degraeve, Taras Ravsher, Shoichi Kabuyanagi, Andrea Fantini, Sergiu Clima, Daniele Garbin, Gouri Sankar Kar:
Modeling and spectroscopy of ovonic threshold switching defects. 1-5 - Yan Ouyang, Suhui Yang, Dandan Yin, Xiang Huang, Zhiqiang Wang, Shengwei Yang, Kun Han, Zhongyi Xia:
Excellent Reliability of Xtacking™ Bonding Interface. 1-6 - Giusy Lama, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Emmanuel Nolot, Niccolo Castellani, Julien Garrione, Marie Claire Cyrille, Gabriele Navarro, Etienne Nowak:
Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory. 1-6 - Yasuyuki Morishita, Satoshi Maeda:
Characterization of NMOS-based ESD Protection for Wide-range Pulse Immunity. 1-4 - Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger:
Variability sources and reliability of 3D - FeFETs. 1-7 - Valerio Milo, Francesco Anzalone, Cristian Zambelli, Eduardo Pérez, Mamathamba Kalishettyhalli Mahadevaiah, Oscar Gonzalez Ossorio, Piero Olivo, Christian Wenger, Daniele Ielmini:
Optimized programming algorithms for multilevel RRAM in hardware neural networks. 1-6 - Yao-Feng Chang, Ilya Karpov, Reed Hopkins, David Janosky, Jacob Medeiros, Benjamin Sherrill, Jiahan Zhang, Yifu Huang, Tanmoy Pramanik, Albert B. Chen, Tony Acosta, Abdullah Guler, James A. O'Donnell, Pedro A. Quintero, Nathan Strutt, Oleg Golonzka, Chris Connor, Jack C. Lee, Jeffrey Hicks:
Embedded emerging memory technologies for neuromorphic computing: temperature instability and reliability. 1-5 - Ryo Kishida, Ikuo Suda, Kazutoshi Kobayashi:
Bias Temperature Instability Depending on Body Bias through Buried Oxide (BOX) Layer in a 65 nm Fully-Depleted Silicon-On-Insulator Process. 1-6 - Luca Pirro, Aarthi Jayakumar, Olaf Zimmerhackl, Dieter Lipp, Ralf Illgen, Armin Muehlhoff, Ronny Pfuetzner, Alban Zaka, Michael Otto, Jan Hoentschel, Yannick Raffel, Konrad Seidel, Ricardo Olivo:
Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices. 1-4 - James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Mitigating switching variability in carbon nanotube memristors. 1-4 - Alexandra Feeley, Yoni Xiong, Bharat L. Bhuva, Balaji Narasimham, Shi-Ji Wen, Rita Fung:
Effects of Temperature and Supply Voltage on Soft Errors for 7-nm Bulk FinFET Technology. 1-5 - Zhwen Chen, Young-Suk Kim, Tadashi Fukuda, Koji Sakui, Takayuki Ohba, Tatsuji Kobayashi, Takashi Obara:
Reliability of Wafer-Level Ultra-Thinning down to 3 µm using 20 nm-Node DRAMs. 1-6 - Seung-Mo Kim, Thi Mi Hanh Nyugen, Jungwon Oh, Yongsu Lee, Soo Cheol Kang, Ho-In Lee, Cihyun Kim, Surajit Some, Hyeon Jun Hwang, Byoung Hun Lee:
Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integration. 1-6 - Shy-Jay Lin, Yen-Lin Huang, MingYaun Song, Chien-Ming Lee, Fen Xue, Guan-Long Chen, Shan-Yi Yang, Yao-Jen Chang, I-Jung Wang, Yu-Chen Hsin, Yi-Hui Su, Jeng-Hua Wei, Chi-Feng Pai, Shan X. Wang, Carlos H. Diaz:
Challenges toward Low-Power SOT-MRAM. 1-7 - Yoni Xiong, Alexandra Feeley, Lloyd W. Massengill, Bharat L. Bhuva, Shi-Jie Wen, Rita Fung:
Frequency, LET, and Supply Voltage Dependence of Logic Soft Errors at the 7-nm Node. 1-5 - Hai Jiang, Jinju Kim, Kihyun Choi, Hyewon Shim, Hyunchul Sagong, Junekyun Park, Hwasung Rhee, Euncheol Lee:
Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction. 1-6 - Giacomo Pedretti, Elia Ambrosi, Daniele Ielmini:
Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM). 1-8 - Allison T. Osmanson, Mohsen Tajedini, Yi Ram Kim, Hossein Madanipour, Choong-Un Kim, Bradley Glasscock, Muhammad Khan:
Mechanisms of Contact Formation and Electromigration Reliability in Wirebond Packages. 1-6 - Davide Tierno, Kristof Croes, Arjun Ajaykumar, Siva Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
Reliability of Mo as Word Line Metal in 3D NAND. 1-6 - Moon Soo Lee, Inhak Baick, Min Kim, Seo Hyun Kwon, Myeong Soo Yeo, Hwasung Rhee, Euncheol Lee:
Chip to Package Interaction Risk Assessment of FCBGA Devices using FEA Simulation, Meta-Modeling and Multi-Objective Genetic Algorithm Optimization Technique. 1-6 - Rakesh Ranjan, Ki-Don Lee, Md Iqbal Mahmud, Mohammad Shahriar Rahman, Pavitra Ramadevi Perepa, Charles Briscoe LaRow, Caleb Dongkyun Kwon, Maihan Nguyen, Minhyo Kang, Ashish Kumar Jha, Ahmed Shariq, Shamas Musthafa Ummer, Susannah Laure Prater, Hyunchul Sagong, HwaSung Rhee:
Systematic Study of Process Impact on FinFET Reliability. 1-5 - Guido T. Sasse, Vignesh Subramanian, Ljubo Radic:
Aging models for n- and p-type LDMOS covering low, medium and high VGS operation. 1-6 - Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra:
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs. 1-8 - Sumy Jose, Chunshan Yin, Yu Chen, Cheong Min Hong, Mehul D. Shroff, Xiaoling Zhao, Fan Zhang:
An efficient methodology to evaluate BEOL and MOL TDDB in advanced nodes. 1-4 - Vamsi Putcha, Liang Cheng, AliReza Alian, Ming Zhao, Hai Lu, Bertrand Parvais, Niamh Waldron, Dimitri Linten, Nadine Collaert:
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. 1-8 - Peng Xiao, Haris Hadziosmanovic, Michael Klessens, Rong Jiang, John Ortega, Daniel Schroeder, James Palmer, Ilan Tsameret:
Customized Parallel Reliability Testing Platform with Multifold Throughput Enhancement for Intel Stressing Tests. 1-6 - Ming-Liang Wei, Hussam Amrouch, Cheng-Lin Sung, Hang-Ting Lue, Chia-Lin Yang, Keh-Chung Wang, Chih-Yuan Lu:
Robust Brain-Inspired Computing: On the Reliability of Spiking Neural Network Using Emerging Non-Volatile Synapses. 1-8 - Nicola Modolo, Andrea Minetto, Carlo De Santi, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level. 1-5 - Matchima Buddhanoy, Sadman Sakib, Biswajit Ray:
Runtime Variability Monitor for Data Retention Characteristics of Commercial NAND Flash Memory. 1-5 - Shih-che Hung, Shih-Chang Chen, Pei-Shan Chien, Yu-Sheng Cho, Yung-Huei Lee, Wei-Shuo Hung:
Time-Efficient Characterization of Time-Dependent Gate Oxide Breakdwon Using Tunable Ramp Voltage Stress (TRVS) Method for Automotive Applications. 1-6 - Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent:
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. 1-5 - Xavier Federspiel, Abdourahmane Camara, Audrey Michard, Cheikh Diouf, Florian Cacho:
HCI Temperature sense effect from 180nm to 28nm nodes. 1-5 - M. Monishmurali, Mayank Shrivastava:
Peculiar Current Instabilities & Failure Mechanism in Vertically Stacked Nanosheet ggN-FET. 1-5 - Patrick Fiorenza, Salvatore Adamo, Mario Santo Alessandrino, Cettina Bottari, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Elisa Vitanza, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte:
Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects. 1-6 - Shudong Huang, Elyse Rosenbaum:
Compact Model of ESD Diode Suitable for Subnanosecond Switching Transients. 1-7 - Liu Yang, Qi Wang, Qianhui Li, Xiaolei Yu, Jing He, Zongliang Huo:
Efficient Data Recovery Technique for 3D TLC NAND Flash Memory based on WL Interference. 1-5 - Maria Toledano-Luque, Peter C. Paliwoda, Mohamed Nour, Thomas Kauerauf, Byoung Min, Germain Bossu, Mahesh Siddabathula, Tanya Nigam:
Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area. 1-6 - Judith Berens, Thomas Aichinger:
A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs. 1-5 - Donghee Son, Gang-Jun Kim, Jongkyun Kim, Nam-Hyun Lee, Kijin Kim, Sangwoo Pae:
Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM. 1-4 - Dimple Kochar, Tarun Samadder, Subhadeep Mukhopadhyay, Souvik Mahapatra:
Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI. 1-7 - Satyam Kumar, Tarun Samadder, Karansingh Thakor, Uma Sharma, Souvik Mahapatra:
Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs. 1-5 - Paul M. Solomon, Douglas M. Bishop, Teodor K. Todorov, Simon Dawes, Damon B. Farmer, Matthew Copel, Ko-Tao Lee, John Collins, John Rozen:
Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM. 1-7 - Ning Duan, Vignesh Subramanian, Edgar Olthof, Paul Eggenkamp, Michiel van Soestbergen, Richard Braspenning:
Moisture diffusion rate in an ultra-low-k dielectric and its effect on the dielectric reliability. 1-7 - Aarti Rathi, P. Srinivasan, Fernando Guarin, Abhisek Dixit:
Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications. 1-6 - Anastasiia Kruv, Sean R. C. McMitchell, Sergiu Clima, Oguzhan O. Okudur, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt:
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. 1-6 - Tonmoy Dhar, Jitesh Poojary, Ramesh Harjani, Sachin S. Sapatnekar:
Aging of Current DACs and its Impact in Equalizer Circuits. 1-6 - Zhenjun Zhang, Matthias Kraatz, Meike Hauschildt, Seungman Choi, André Clausner, Ehrenfried Zschech, Martin Gall:
Strategy to Characterize Electromigration Short Length Effects in Cu/low-k Interconnects. 1-5 - Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang:
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs. 1-5 - Eliana Acurio, Lionel Trojman, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere:
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. 1-6 - Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken:
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. 1-7 - Ke Zeng, Srabanti Chowdhury, Brendan Gunning, Robert Kaplar, Travis Anderson:
Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination. 1-4 - Yasunori Tateno, Ken Nakata, Akio Oya, Keita Matsuda, Yoshihide Komatsu, Shinichi Osada, Masafumi Hirata, Shigeyuki Ishiyama, Toshiki Yoda, Atsushi Nitta, Tomio Sato:
Investigation of the Failure Mechanism of InGaAs-pHEMT under High Temperature Operating Life Tests. 1-4 - Runsheng Wang, Zuodong Zhang, Yawen Zhang, Yixuan Hu, Yanan Sun, Weikang Qian, Ru Huang:
Can Emerging Computing Paradigms Help Enhancing Reliability Towards the End of Technology Roadmap? 1-7 - Yung-Huei Lee, P. J. Liao, Vincent Hou, Dawei Heh, Chih-Hung Nien, Wen-Hsien Kuo, Gary T. Chen, Shao-Ming Yu, Yu-Sheng Chen, Jau-Yi Wu, Xinyu Bao, Carlos H. Diaz:
Composition Segregation of Ge-Rich GST and Its Effect on Reliability. 1-6 - Kevin A. Stewart, Keiichi Kimura, Matt Ring, Koen Noldus, Pat Hulse, Rick C. Jerome, Akihiro Hasegawa, Jeff P. Gambino, David T. Price:
Assessing SiCr resistor drift for automotive analog ICs. 1-4 - Jairo Nevarez, Anthony Olmedo, Rachel Williams, Polina Pechnikova:
Gate Driver Protection Methods for SiC MOSFET Short Circuit Testing. 1-4 - John D. Cressler:
New Developments in SiGe HBT Reliability for RF Through mmW Circuits. 1-6 - Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic:
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. 1-6 - Joseph P. Kozak, Qihao Song, Ruizhe Zhang, Jingcun Liu, Yuhao Zhang:
Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage. 1-5 - Florian Cacho, Lorena Anghel, Xavier Federspiel:
Monitoring Setup and Hold Timing Limits. 1-6 - Bruna Mazza, Salvatore Patané, Francesco Cordiano, Massimiliano Giliberto, Giovanni Renna, Andrea Severino, Edoardo Zanetti, Massimo Boscaglia, Giovanni Franco:
Effect of interface and bulk charges on the breakdown of nitrided gate oxide on 4H-SiC. 1-4 - Jin-Woo Han, M. Meyyappan, Jungsik Kim:
Single Event Hard Error due to Terrestrial Radiation. 1-6 - W. Y. Yang, E. R. Hsieh, C. H. Cheng, B. Y. Chen, K. S. Li, Steve S. Chung:
A Reliable Triple-Level Operation of Resistive-Gate Flash Featuring Forming-Free and High Immunity to Sneak Path. 1-6 - Jean-Marie Lauenstein, Megan C. Casey, Ray L. Ladbury, Hak S. Kim, Anthony M. Phan, Alyson D. Topper:
Space Radiation Effects on SiC Power Device Reliability. 1-8 - Gyusung Park, Hanzhao Yu, Minsu Kim, Chris H. Kim:
An All BTI (N-PBTI, N-NBTI, P-PBTI, P-NBTI) Odometer based on a Dual Power Rail Ring Oscillator Array. 1-5 - Kazunari Ishimaru:
Challenges of Flash Memory for Next Decade. 1-5 - Shanmuganathan Palanisamy, Thomas Basler, Josef Lutz, Cesare Künzel, Larissa Wehrhahn-Kilian, Rudolf Elpelt:
Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density. 1-6 - Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl:
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. 1-6 - Aniket Gupta, Govind Bajpai, Priyanshi Singhal, Navjeet Bagga, Om Prakash, Shashank Banchhor, Hussam Amrouch, Nitanshu Chauhan:
Traps Based Reliability Barrier on Performance and Revealing Early Ageing in Negative Capacitance FET. 1-6 - Sayeef S. Salahuddin:
Ultrathin Ferroelectricity and Its Application in Advanced Logic and Memory Devices. 1-4 - Rajesh Kashyap:
Silicon lifecycle management (SLM) with in-chip monitoring. 1-4 - Neel Chatterjee, John Ortega, Inanc Meric, Peng Xiao, Ilan Tsameret:
Machine Learning On Transistor Aging Data: Test Time Reduction and Modeling for Novel Devices. 1-9 - Tsung-En Lee, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi:
Characterization of Slow Traps in SiGe MOS Interfaces by TiN/Y2O3 Gate Stacks. 1-4 - Tomohiro Kuyama, Keiichiro Urabe, Koji Eriguchi:
Evaluation methodology for assessment of dielectric degradation and breakdown dynamics using time-dependent impedance spectroscopy (TDIS). 1-7 - Robert L. Bruce, Syed Ghazi Sarwat, Irem Boybat, Cheng-Wei Cheng, Wanki Kim, S. R. Nandakumar, Charles Mackin, Timothy Philip, Zuoguang Liu, Kevin Brew, Nanbo Gong, Injo Ok, Praneet Adusumilli, Katie Spoon, Stefano Ambrogio, Benedikt Kersting, Thomas Bohnstingl, Manuel Le Gallo, Andrew Simon, Ning Li, Iqbal Saraf, Jin-Ping Han, Lynne M. Gignac, John M. Papalia, Tenko Yamashita, Nicole Saulnier, Geoffrey W. Burr, Hsinyu Tsai, Abu Sebastian, Vijay Narayanan, Matthew BrightSky:
Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation. 1-6 - Alicja Lesniewska, Olalla Varela Pedreira, Melina Lofrano, Gayle Murdoch, Marleen H. van der Veen, Anish Dangol, Naoto Horiguchi, Zsolt Tökei, Kris Croes:
Reliability of a DME Ru Semidamascene scheme with 16 nm wide Airgaps. 1-6 - Jae-Gyung Ahn, Rhesa Nathanael, I-Ru Chen, Ping-Chin Yeh, Jonathan Chang:
Product Lifetime Estimation in 7nm with Large data of Failure Rate and Si-Based Thermal Coupling Model. 1-6 - M. Monishmurali, Mayank Shrivastava:
A Novel High Voltage Drain Extended FinFET SCR for SoC Applications. 1-4 - Joel Minguet Lopez, Lucas Hudeley, Laurent Grenouillet, Diego Alfaro Robayo, Jury Sandrini, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Damien Deleruyelle, Niccolo Castellani, Marc Bocquet, Jean-Michel Portal, Etienne Nowak, Gabriel Molas:
Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization. 1-6 - Yongju Zheng, Rahul R. Potera, Tony Witt:
Characterization of Early Breakdown of SiC MOSFET Gate Oxide by Voltage Ramp Tests. 1-5 - Pratik B. Vyas, Ninad Pimparkar, Robert Tu, Wafa Arfaoui, Germain Bossu, Mahesh Siddabathula, Steffen Lehmann, Jung-Suk Goo, Ali B. Icel:
Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection. 1-4 - Subrat Mishra, Pieter Weckx, Odysseas Zografos, Ji-Yung Lin, Alessio Spessot, Francky Catthoor:
Overhead Reduction with Optimal Margining Using A Reliability Aware Design Paradigm. 1-7 - P. Srinivasan, Da Song, David Rose, Maurice LaCroix, Arunima Dasgupta:
Back gate bias effect and layout dependence on Random Telegraph Noise in FDSOI technologies. 1-4 - Lixia Han, Yachen Xiang, Peng Huang, Guihai Yu, Runze Han, Xiaoyan Liu, Jinfeng Kang:
Novel Weight Mapping Method for Reliable NVM based Neural Network. 1-6 - Gaspard Hiblot, Nouredine Rassoul, Lieve Teugels, Katia Devriendt, Adrian Vaisman Chasin, Michiel J. van Setten, Attilio Belmonte, Romain Delhougne, Gouri Sankar Kar:
Process-induced charging damage in IGZO nTFTs. 1-8 - P. Srinivasan, Fernando Guarin:
CMOS RF reliability for 5G mmWave applications - Challenges and Opportunities. 1-7 - Salvatore Race, Thomas Ziemann, Shweta Tiwari, Ivana Kovacevic-Badstuebner, Ulrike Grossner:
Accuracy of Thermal Analysis for SiC Power Devices. 1-5 - Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo:
TDDB Reliability in Gate-All-Around Nanosheet. 1-6 - Mauro Ciappa, Marco Pocaterra:
Assessing the pre-breakdown carriers' multiplication in SiC power MOSFETs by soft gamma radiation and its correlation to the Terrestrial Cosmic Rays failure rate data as measured by neutron irradiation. 1-8 - Sagar Premnath Karalkar, Vishal Ganesan, Milova Paul, Kyong Jin Hwang, Robert Gauthier:
Design Optimization of MV-NMOS to Improve Holding Voltage of a 28nm CMOS Technology ESD Power Clamp. 1-5 - Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger:
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. 1-7 - Qihao Song, Ruizhe Zhang, Joseph P. Kozak, Jingcun Liu, Qiang Li, Yuhao Zhang:
Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy Events. 1-7 - Simon Van Beek, Siddharth Rao, Shreya Kundu, Woojin Kim, Barry J. O'Sullivan, Stefan Cosemans, Farrukh Yasin, Robert Carpenter, Sebastien Couet, Shamin H. Sharifi, Nico Jossart, Davide Crotti, Gouri Sankar Kar:
Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution. 1-5 - Wonbo Shim, Jian Meng, Xiaochen Peng, Jae-sun Seo, Shimeng Yu:
Impact of Multilevel Retention Characteristics on RRAM based DNN Inference Engine. 1-4 - Balraj Arunachalam, Jean-Emmanuel Broquin, Quentin Rafhay, David Roy, Anne Kaminski:
Simulation Study of the Origin of Ge High Speed Photodetector Degradation. 1-4 - Konner E. K. Holden, Gavin D. R. Hall, Michael Cook, Chris Kendrick, Kaitlyn Pabst, Bruce Greenwood, Robin Daugherty, Jeff P. Gambino, Derryl D. J. Allman:
Dielectric Relaxation, Aging and Recovery in High-K MIM Capacitors. 1-10 - John Osenbach:
Reliability of optoelectronic module An Introduction. 1-9 - Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho:
Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling. 1-5 - Halid Mulaosmanovic, Patrick D. Lomenzo, Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick, Benjamin Max:
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. 1-6 - Balaji Narasimham, Vikas Chaudhary, Mike Smith, Liming Tsau, Dennis R. Ball, Bharat L. Bhuva:
Scaling Trends in the Soft Error Rate of SRAMs from Planar to 5-nm FinFET. 1-5 - Shuntaro Fujii, Shohei Hamada, Tatsushi Yagi, Isao Maru, Shogo Katsuki, Toshiro Sakamoto, Atsushi Okamoto, Soichi Morita, Tsutomu Miyazaki:
Impacts of Depth and Lateral Profiles of Fluorine Atoms in Gate Oxide Films on Reliability. 1-5 - Wei Liu, Yaru Ding, Liang Zhao, Yi Zhao:
Nanosecond-scale and self-heating free characterization of advanced CMOS transistors utilizing wave reflection. 1-5 - Kento Kariya, Atsushi Yumiba, Masaya Ukita, Toru Ikeda, Masaaki Koganemaru, Noriyuki Masago:
Study of the microstructure and the mechanical properties of Pb-2.5Ag-2Sn solder joint. 1-4 - P. Srinivasan, Fernando Guarin, Shafi Syed, Joris Angelo Sundaram Jerome, Wen Liu, Sameer H. Jain, Dimitri Lederer, Stephen Moss, Paul Colestock, Anirban Bandyopadhyay, Ned Cahoon, Byoung Min, Martin Gall:
RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications. 1-6 - Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo:
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. 1-8 - Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer:
A BSIM-Based Predictive Hot-Carrier Aging Compact Model. 1-9 - Ooi Michael, Loo Tung Lun, Koay Eng Keong:
Methodology to improve Safety Critical SoC based platform: a case study. 1-4 - Bikram Kishore Mahajan, Yen-Pu Chen, Dhanoop Varghese, Vijay Reddy, Srikanth Krishnan, Muhammad Ashraful Alam:
Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique. 1-6 - Tim McDonald, Stephanie Watts Butler:
Progress and Current Topics of JEDEC JC-70.1 Power GaN Device Quality and Reliability Standards Activity: Or: What is the Avalanche capability of your GaN Transistor? 1-6 - John Scarpulla:
Guidelines for Space Qualification of GaN HEMTs and MMICs. 1-11 - Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, Sebastian Krause, Andreas Graff, Michél Simon-Najasek:
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. 1-7 - Wangxin He, Wonbo Shim, Shihui Yin, Xiaoyu Sun, Deliang Fan, Shimeng Yu, Jae-sun Seo:
Characterization and Mitigation of Relaxation Effects on Multi-level RRAM based In-Memory Computing. 1-7 - Jifa Hao, Yuhang Sun, Amartya Ghosh:
Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS. 1-4 - Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, David Sheridan:
Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs. 1-7 - Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini:
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs. 1-5
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