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ORCIDIET Circuits, Devices & Systems, Volume 9
Volume 9, Number 1, January 2015
- Stephen Watts:
Graphene Electronics. 1 - Mohammed F. Mabrook
, Dagou Zeze:
Editorial: Graphene electronics. 2-3 - Zhong Yan, Denis L. Nika, Alexander A. Balandin:
Thermal properties of graphene and few-layer graphene: applications in electronics. 4-12 - Yuting Li, David A. Drabold:
Electronic signatures of topological disorder in amorphous graphene. 13-18 - Tapash Chakraborty, Vadym M. Apalkov:
Fractal butterflies of Dirac fermions in monolayer and bilayer graphene. 19-29 - Paolo Marconcini, Massimo Macucci:
Approximate calculation of the potential profile in a graphene-based device. 30-38 - Moon H. Kang, William I. Milne, Matthew T. Cole:
Doping stability and opto-electronic performance of chemical vapour deposited graphene on transparent flexible substrates. 39-45 - Shakil A. Awan, Genhua Pan, Laith M. Al Taan, Bing Li, Nawfal Jamil:
Radio-frequency transport Electromagnetic Properties of chemical vapour deposition graphene from direct current to 110 MHz. 46-51 - Vidya Kochat, Anindita Sahoo, Atindra Nath Pal, Sneha Eashwer, Gopalakrishnan Ramalingam, Arjun Sampathkumar, Ryugu Tero, Tran Viet Thu, Sanjeev Kaushal, Hiroshi Okada, Adarsh Sandhu, Srinivasan Raghavan, Arindam Ghosh:
Origin of 1/f noise in graphene produced for large-scale applications in electronics. 52-58 - Madhuri Sharon, Neeraj Mishra, Bhushan Patil, Ashmi Mewada, Raju Gurung, Maheshwar Sharon:
Conversion of polypropylene to two-dimensional graphene, one-dimensional carbon nano tubes and zero-dimensional C-dots, all exhibiting typical sp2-hexagonal carbon rings. 59-66 - Homod S. Alaabdlqader, Adam Sleiman, Paul Sayers, Mohammed F. Mabrook:
Graphene oxide-based non-volatile organic field effect memory transistors. 67-71
Volume 9, Number 2, March 2015
- Matteo Biggio, Federico Bizzarri, Angelo Brambilla, Marco Storace:
Efficient transient noise analysis of non-periodic mixed analogue/digital circuits. 73-80 - Abbas Erfanian, Hamed Mehrara, Farshid Raissi, Mahdi Khaje:
Coulomb blockade in PtSi/porous Si Schottky barrier as a two-dimensional multi-tunnelling junction. 81-86 - Giray Kömürcü, Ali Emre Pusane, Günhan Dündar:
Enhanced challenge-response set and secure usage scenarios for ordering-based ring oscillator-physical unclonable functions. 87-95 - Davide Alghisi, Marco Ferrari, Vittorio Ferrari:
Battery-less non-contact temperature measurement system powered by energy harvesting from intentional human action. 96-104 - Trinidad Sánchez-Rodríguez, Juan Antonio Gómez Galán, Manuel Pedro, Antonio J. López-Martín, Ramón González Carvajal, Jaime Ramírez-Angulo:
Low-power CMOS variable gain amplifier based on a novel tunable transconductor. 105-110 - Supriya Karmakar, Mukesh Gogna, Ernesto Suarez, Faquir C. Jain:
Three-state quantum dot gate field-effect transistor in silicon-on-insulator. 111-118 - Yushi Zhou, Fei Yuan:
Study of injection-locked non-harmonic oscillators using Volterra series. 119-130 - Debashis Mandal, Pradip Mandal, T. K. Bhattacharyya:
Prediction of reference spur in frequency synthesisers. 131-139
Volume 9, Number 3, May 2015
- Apratim Roy, Muhammad Rashid:
Common-rail powered reliability improving technique for single-supply complementary metal oxide semiconductor amplifiers. 141-151 - Neeta Pandey, Rajeshwari Pandey:
Approach for third order quadrature oscillator realisation. 161-171 - Xi Qu, Ze-kun Zhou, Bo Zhang:
Ultralow-power fast-transient output-capacitor-less low-dropout regulator with advanced adaptive biasing circuit. 172-180 - Alireza Mesri, Mahmoud Mahdipour Pirbazari, Khayrollah Hadidi, Abdollah Khoei:
High gain two-stage amplifier with positive capacitive feedback compensation. 181-190 - M. Abdel All, Hanan M. Hassan, M. Hamdy, Omar A. Nasr, Karim Mohamed, Ahmed F. Shalash:
Design and implementation of application-specific instruction-set processor design for high-throughput multi-standard wireless orthogonal frequency division multiplexing baseband processor. 191-203 - Vishesh Dokania, Aminul Islam:
Circuit-level design technique to mitigate impact of process, voltage and temperature variations in complementary metal-oxide semiconductor full adder cells. 204-212 - Guido Belfiore, László Szilágyi, Ronny Henker, Udo Jörges, Frank Ellinger:
Design of a 56 Gbit/s 4-level pulse-amplitude-modulation inductor-less vertical-cavity surface-emitting laser driver integrated circuit in 130 nm BiCMOS technology. 213-220 - Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Wang-Soo Kim, Woo-Young Choi:
Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal-oxide semiconductor technology. 221-226 - Tom T. Hartley, Robert J. Veillette, Jay L. Adams, Carl F. Lorenzo:
Energy storage and loss in fractional-order circuit elements. 227-235
Volume 9, Number 4, July 2015
- Haoran Yu, Kamal El-Sankary, Ezz I. El-Masry:
Wideband complementary metal-oxide-semiconductor double-bulk harmonic-rejection mixer. 237-243 - Chun Li, Jason Li, Jieming Li:
Dual relations and the branch-dualising rule of the duality principle. 244-248 - Andrea De Marcellis, Giuseppe Ferri, Paolo Mantenuto:
Uncalibrated operational amplifier-based sensor interface for capacitive/resistive sensor applications. 249-255 - Bharadvaj Bhamidipati, Adrian Colli-Menchi, Edgar Sánchez-Sinencio:
Low power complementary metal-oxide semiconductor class-G audio amplifier with gradual power supply switching. 256-264 - Mohammad Taherifard, Mahmood Fathy:
Improving logic function synthesis, through wire crossing reduction in quantum-dot cellular automata layout. 265-274 - Suhwan Kim, Gabriel A. Rincón-Mora:
Dual-source hysteretic switched-inductor 0.18 µm complementary metal-oxide-semiconductor charger-supply system. 275-282 - Kumar Narendra, Lokesh Anand:
Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications. 283-289 - Ahlad Kumar:
Complementary metal-oxide semiconductor implementation of digital filters for signal processing applications. 290-298 - Mahmoud Mahdipour Pirbazari, Khayrollah Hadidi, Abdollah Khoei, Shamim Sadrafshari:
High speed, open loop residue amplifier with linearity improvement. 299-308 - Weng-Geng Ho, Kwen-Siong Chong, Bah-Hwee Gwee, Joseph S. Chang:
Low power sub-threshold asynchronous quasi-delay-insensitive 32-bit arithmetic and logic unit based on autonomous signal-validity half-buffer. 309-318
Volume 9, Number 5, September 2015
- Nijwm Wary, Pradip Mandal:
High-speed energy-efficient bi-directional transceiver for on-chip global interconnects. 319-327 - Jens Spinner, Jürgen Freudenberger:
Decoder architecture for generalised concatenated codes. 328-335 - Jeng-Shyang Pan, Chiou-Yng Lee, Yao Li:
Subquadratic space complexity Gaussian normal basis multipliers over GF(2m) based on Dickson-Karatsuba decomposition. 336-342 - Masoomeh Jasemi, Reza Faghih Mirzaee, Keivan Navi, Nader Bagherzadeh:
Voltage mirror circuit by carbon nanotube field effect transistors for mirroring dynamic random access memories in multiple-valued logic and fuzzy logic. 343-352 - Mury Thian, Vincent F. Fusco:
Holistic design strategy for high-selectivity low-loss integrated millimetre-wave image-reject filters. 353-361 - Câncio Monteiro, Yasuhiro Takahashi, Toshikazu Sekine:
Low-power secure S-box circuit using charge-sharing symmetric adiabatic logic for advanced encryption standard hardware design. 362-369 - Asma Dehghani, Mohsen Saneei, Ali Mahani:
Time-to-digital convertor based on resolution control. 370-376 - Kota Naga Srinivasarao Batta, Indrajit Chakrabarti, Mohammad Nawaz Ahmad:
High-speed low-power very-large-scale integration architecture for dual-standard deblocking filter. 377-383
Volume 9, Number 6, November 2015
- Dagou Zeze, Mohammed F. Mabrook:
Graphene Electronics, Volume 2. 385 - Xiaoliang Zhong, Ravindra Pandey, Shashi P. Karna:
First principles study of bilayer graphene formed by zigzag nanoribbons. 386-391 - Ramesh Kumar, Amarjeet Kaur:
Charge transport mechanism of hydrazine hydrate reduced graphene oxide. 392-396 - Ling Hao, John C. Gallop, Quan Liu, Jie Chen:
Microwave method for high-frequency properties of graphene. 397-402 - Thomas H. Bointon, Saverio Russo, Monica Felicia Craciun:
Is graphene a good transparent electrode for photovoltaics and display applications? 403-412 - Ankur Sharma, Utkarshaa Varshney, Yuerui Lu:
Electronic applications of graphene mechanical resonators. 413-419 - Stefan Goniszewski, John C. Gallop, Mohammad Adabi, Krzysztof Gajewski, Olena Shaforost, Norbert Klein, Andrzej Sierakowski, Jie Chen, Yifang Chen, Teodor P. Gotszalk, Ling Hao:
Self-supporting graphene films and their applications. 420-427 - Indranil Banerjee, Paul Harris, Ali Salimian, Asim K. Ray:
Graphene oxide thin films for resistive memory switches. 428-433 - Numan Celik, Wamadeva Balachandran, Nadarajah Manivannan:
Graphene-based biosensors: methods, analysis and future perspectives. 434-445 - Oana Moldovan, Benjamín Iñíguez, M. Jamal Deen, Lluís F. Marsal:
Graphene electronic sensors - review of recent developments and future challenges. 446-453
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