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ORCIDMicroelectronics Journal, Volume 152
Volume 152, 2024
- Bolin Ren
, Fangxu Lv, Mingche Lai, Liquan Xiao, Geng Zhang, Xuqiang Zheng, Zhang Luo, Jiaqing Xu:
A 56-Gb/s,0.708 pJ/bit single-ended simultaneous bidirectional transceiver with hybrid errors cancellation techniques for die-to-die interface. 106326 - Meng Li, Fangxu Lv, Mingche Lai, Xuqiang Zheng, Heng Huang, Xingyun Qi, Geng Zhang:
A fully digital timing background calibration algorithm based on first-order auto-correlation for time-interleaved ADCs. 106330 - Wu Yang, Jie Gao, Qiu Li, Jun Zhang:
Design of RISC-V out-of-order processor based on segmented exclusive or Gshare branch prediction. 106334 - Ni Wang, Yu Liang, Wei Zhang, Tingting Wu, Dongning Hao:
A foreground calibration technique with multi-level dither for a 14-bit 1-MS/s SAR ADC. 106351 - Weidong Xue, Xinwei Yu, Yisen Zhang, Xin Ming, Jian Fang, Junyan Ren:
A 3.0-V 4.2-μA 2.23-ppm/°C BGR with cross-connected NPNs and base-current compensation. 106354 - Haizhun Wang, Yinshui Xia, Xiudeng Wang, Zhidong Chen:
A 40 mV cold-start circuit with bootstrap clock booster for thermoelectric energy harvesting. 106360 - Zhiwei Chen, Xinjie Zhao, Qipei Zhou, Tingli Cheng, Xiang Li, Yujiao Zhang:
An approximate dynamic model of double-sided LCC resonant converter in wireless power transmission based on average current model. 106370 - Yuxuan Huang, Zhihua Tao, Xudong Cai, Zhiyuan Long, Zewei Lin, Wenlei Li, Zhen Fang, Lingyue Wang, Siqi He, Xingzhou Cai, Yong Li, Jihua Zhang:
Electroless silver plating on through-glass via (TGV) as an adhesive and conducting layer. 106371 - Joon-Hyuk Yoon, Ha-Neul Lee, Ui-Gyu Choi, Jong-Ryul Yang:
Asymmetric CMOS switch for Dicke radiometer in millimeter-wave imaging system. 106372 - Abdelrahman A. Mohammad, Mohamed A. Y. Abdalla, Hesham Omran:
Variation-aware automated design and optimization of sub-1V bandgap voltage reference. 106373 - Aastha Gupta, Ravi Sindal, Vaibhav Neema:
Memory architecture to mitigate side channel attacks for cryptographic application using loop cut technique. 106374 - Zichao Wang, Kui Wen, Ruixue Ding, Shubin Liu, Zhangming Zhu:
A chopper instrumentation amplifier with discrete-time compensation based on current generation unit to eliminate electrode DC offset. 106375 - Yuqing Huang, Yanwei Sun, Jubing Xu, Xiangzhan Hu, Yinshui Xia, Xiudeng Wang, Huakang Xia, Siguang An, Ge Shi:
Piezoelectric-electromagnetic collaborative energy extraction circuit for wearable vibration energy harvester. 106376 - Mingqi Yin, Xiaole Cui, Feng Wei, Hanqing Liu, Yuanyuan Jiang, Xiaoxin Cui:
A reconfigurable FPGA-based spiking neural network accelerator. 106377 - Xiaomin He, Haitao Zhang, Liqiao Wu, Jichao Hu, Min Lu, Lei Yuan:
Simulation study on temperature characteristics of AlN/ β-Ga2O3 HEMT. 106386 - Lixin Geng, Ruifeng Yue, Yan Wang:
Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices. 106387 - Jin Xie, Chunkai Wu, Junyuan Wu, Jinghu Li, Zhicong Luo, Qiyan Sun:
A -184 dB PSRR and 2.47 μVrms noise self biased bandgap reference based on FVF structure. 106388 - Tiedong Cheng, Xinlv Gong:
A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference. 106389 - Yugal Kishore Maheshwari, Manoj Sachdev:
A power-efficient, single-phase, contention-free flip-flop with only three clock transistors. 106390 - Carlos Alfredo Pelcastre Ortega, Mónico Linares Aranda:
Hourglass transistor: An alternative and improved MOS structure robust to total ionization dose radiation. 106391 - Lijun Xu, Linfang An, Jia Zhao, Yulei He, Lijuan Teng, Yuanxing Jiang:
Impacts of quantum confinement effect on threshold voltage and drain-induced barrier lowering effect of junctionless surrounding-gate nanosheet NMOSFET including source/drain depletion regions. 106392 - Zeyu Wu, Junyuan Zhao, Wei Wang, Bo Niu, Botao Liu, Yawei Wang, Yinfang Zhu, Weibin Cui, Jinling Yang:
A novel narrowband MEMS filter with extensional mode resonators. 106393 - M. Jagadesh, A Karthikeyan, Devaraj Somasundaram:
DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate. 106394 - Shize Duan, Zhenrong Li, Yanhui Wu, Xing Quan:
A 28-47.5 GHz broadband power amplifier using improved MCR technique in 40-nm CMOS. 106395
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