default search action
Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCIDMicroelectronics Reliability, Volume 49
Volume 49, Number 1, January 2009
- W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan:
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. 1-7 - Chao Gao, Jun Wang
, Lei Wang, Andrew Yap, Hong Li:
Two-stage hot-carrier degradation behavior of 0.18 µm 18 V n-type DEMOS and its recovery effect. 8-12 - Hei Wong, Y. Fu, Juin J. Liou, Y. Yue:
Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors. 13-16 - Yi Shan, John He, Wen Huang:
New substrate-triggered ESD protection structures in a 0.18-µm CMOS process without extra mask. 17-25 - M. S. Rahman, E. K. Evangelou, I. I. Androulidakis, Athanasios Dimoulas:
Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-kappa gate stacks on germanium. 26-31 - Peter G. Muzykov, Robert M. Kennedy, Qingchun Zhang, Craig Capell, Al Burk, Anant Agarwal, Tangali S. Sudarshan:
Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors. 32-37 - Jun Liu, Wing-Shan Tam, Hei Wong, Valeriu Filip:
Temperature-dependent light-emitting characteristics of InGaN/GaN diodes. 38-41 - Keun Ho Rhew, Su Chang Jeon, Dae Hee Lee, Byueng-Su Yoo, Ilgu Yun:
Reliability assessment of 1.55-µm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests. 42-50 - Reiner W. Kuehl:
Stability of thin film resistors - Prediction and differences base on time-dependent Arrhenius law. 51-58 - Ta-Hsuan Lin, Stephen Paul, Susan S. Lu, Huitian Lu:
A study on the performance and reliability of magnetostatic actuated RF MEMS switches. 59-65 - Haifei Bao, Zhaohui Song, Deren Lu, Xinxin Li:
A simple estimation of transverse response of high-g accelerometers by a free-drop-bar method. 66-73 - V. Born, M. Beck, O. Bosholm, D. Dalleau, S. Glenz, I. Haverkamp, G. Kurz, F. Lange, Anja Vest:
Extended metallization reliability testing: Combining standard wafer level with product tests to increase test sensitivity. 74-78 - Fang Liu, Guang Meng, Mei Zhao, Jun feng Zhao:
Experimental and numerical analysis of BGA lead-free solder joint reliability under board-level drop impact. 79-85 - Weiqun Peng:
An investigation of Sn pest in pure Sn and Sn-based solders. 86-91 - Kati Kokko, Hanna Harjunpää, Pekka Heino, Minna Kellomäki:
Influence of medical sterilization on ACA flip chip joints using conformal coating. 92-98 - Sangwook Kwon, Jongseok Kim, Gilsu Park, Youngtack Hong, Byeong-Kwon Ju, Insang Song:
RF device package method using Au to Au direct bonding technology. 99-102
Volume 49, Number 2, February 2009
- Zeynep Çelik-Butler, Siva Prasad Devireddy, Hsing-Huang Tseng, Philip J. Tobin, Ania Zlotnicka:
A low-frequency noise model for advanced gate-stack MOSFETs. 103-112
- Te-Kuang Chiang:
A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's. 113-119 - Giacomo Langfelder, Antonio Longoni, Federico Zaraga, Alberto Corigliano, Aldo Ghisi, A. Merassi:
A new on-chip test structure for real time fatigue analysis in polysilicon MEMS. 120-126 - A. Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mark D. Vaudin, Mona E. Zaghloul:
Experimental and simulation studies of resistivity in nanoscale copper films. 127-134 - Fernanda Irrera, Ivan Piccoli, Giuseppina Puzzilli, Massimo Rossini, Tommaso Vali:
Reliability improvements in 50 nm MLC NAND flash memory using short voltage programming pulses. 135-138 - Ee-Hua Wong, S. K. W. Seah, W. D. van Driel, J. F. J. M. Caers, N. Owens, Y.-S. Lai:
Advances in the drop-impact reliability of solder joints for mobile applications. 139-149 - Xuefen Ong, Soon Wee Ho, Yue Ying Ong, Leong Ching Wai, Kripesh Vaidyanathan, Yeow Kheng Lim, David Yeo, Kai Chong Chan, Juan Boon Tan, Dong Kyun Sohn, Liang Choo Hsia, Zhong Chen:
Underfill selection methodology for fine pitch Cu/low-k FCBGA packages. 150-162 - Yue-Tzu Yang, Huan-Sen Peng:
Investigation of planted pin fins for heat transfer enhancement in plate fin heat sink. 163-169 - Xiaoxiao Liu, Guangsheng Ma, Jingbo Shao, Zhi Yang, Guanjun Wang:
Interconnect crosstalk noise evaluation in deep-submicron technologies. 170-177 - M. Reza Javaheri, Reza Sedaghat:
Multi-valued logic mapping of resistive short and open delay-fault testing in deep sub-micron technologies. 178-185 - Miljana Sokolovic, Vanco B. Litovski, Mark Zwolinski:
New concepts of worst-case delay and yield estimation in asynchronous VLSI circuits. 186-198 - Seyyed Javad Seyyed Mahdavi, Karim Mohammadi:
Evolutionary derivation of optimal test sets for neural network based analog and mixed signal circuits fault diagnosis approach. 199-208
- C. Cantin, C. Laviron, G. Gove:
Charging control on high energy implanters: A process requirement demonstrated by plasma damage monitoring. 209-214 - C. Cantin, G. Gove, G. Polisski:
Verification and reduction of surface charging during high/medium current implantations by implementing plasma damage monitoring. 215-220
Volume 49, Number 3, March 2009
- Yi-Shao Lai, Ho-Ming Tong, King-Ning Tu:
Recent research advances in Pb-free solders. 221-222 - Jun Shen, Y. C. Chan:
Research advances in nano-composite solders. 223-234 - Li-Wei Lin, Jenn-Ming Song, Yi-Shao Lai, Ying-Ta Chiu, Ning-Cheng Lee, Jun-Yen Uan:
Alloying modification of Sn-Ag-Cu solders by manganese and titanium. 235-241 - Tomi Laurila, J. Hurtig, Vesa Vuorinen, Jorma K. Kivilahti:
Effect of Ag, Fe, Au and Ni on the growth kinetics of Sn-Cu intermetallic compound layers. 242-247 - Yi-Wun Wang, Y. W. Lin, C. Robert Kao:
Kirkendall voids formation in the reaction between Ni-doped SnAg lead-free solders and different Cu substrates. 248-252 - Brook Huang-Lin Chao, Xuefeng Zhang, Seung-Hyun Chae, Paul S. Ho:
Recent advances on kinetic analysis of electromigration enhanced intermetallic growth and damage formation in Pb-free solder joints. 253-263 - Jiunn Chen, Yi-Shao Lai:
Towards elastic anisotropy and strain-induced void formation in Cu-Sn crystalline phases. 264-268 - S. M. Hayes, Nikhilesh Chawla, D. R. Frear:
Interfacial fracture toughness of Pb-free solders. 269-287 - Sun-Kyoung Seo, Sung K. Kang, Da-Yuan Shih, Hyuck Mo Lee:
The evolution of microstructure and microhardness of Sn-Ag and Sn-Cu solders during high temperature aging. 288-295 - Feng Gao, Hiroshi Nishikawa, Tadashi Takemoto, Jianmin Qu:
Mechanical properties versus temperature relation of individual phases in Sn-3.0Ag-0.5Cu lead-free solder alloy. 296-302 - Ruihong Zhang, Ran Zhao, Fu Guo, Zhidong Xia:
Interfacial reaction between the electroless nickel immersion gold substrate and Sn-based solders. 303-309 - S. T. Jenq, Hsuan-Hu Chang, Yi-Shao Lai, Tsung-Yueh Tsai:
High strain rate compression behavior for Sn-37Pb eutectic alloy, lead-free Sn-1Ag-0.5Cu and Sn-3Ag-0.5Cu alloys. 310-317 - Albert T. Wu, Y. C. Ding:
The suppression of tin whisker growth by the coating of tin oxide nano particles and surface treatment. 318-322
- Vivek Chidambaram, John Hald, Jesper Henri Hattel:
Development of gold based solder candidates for flip chip assembly. 323-330 - J. de Vries, M. Jansen, Willem D. van Driel:
Solder-joint reliability of HVQFN-packages subjected to thermal cycling. 331-339 - Aldo Ghisi, Fabio Fachin, Stefano Mariani, Sarah Zerbini:
Multi-scale analysis of polysilicon MEMS sensors subject to accidental drops: Effect of packaging. 340-349 - Shufeng Zhao, Xingshou Pang:
Investigation of delamination control in plastic package. 350-356
Volume 49, Number 4, April 2009
- Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki:
Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal. 357-364 - A. Srivastava, Partha Sarkar, Chandan Kumar Sarkar:
Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications. 365-370 - Chia-Huai Ho, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Chun-Chang Lu, Tien-Ko Wang:
Employing vertical dielectric layers to improve the operation performance of flash memory devices. 371-376 - Fayçal Djeffal, Z. Ghoggali, Zohir Dibi, N. Lakhdar:
Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges. 377-381 - Dongyue Jin, Wanrong Zhang, Hongyun Xie, Liang Chen, Pei Shen, Ning Hu:
Structure optimization of multi-finger power SiGe HBTs for thermal stability improvement. 382-386 - Sik-Lam Siu, Hei Wong, Wing-Shan Tam, Kuniyuki Kakushima, Hiroshi Iwai:
Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors. 387-391 - Partha Sarkar, Abhijit Mallik, Chandan Kumar Sarkar:
Study on the performance of sub 100 nm LACLATI MOSFETs for digital application. 392-396 - Long Bin Tan, Xiaowu Zhang, Chwee Teck Lim, Vincent B. C. Tan:
Mapping the failure envelope of board-level solder joints. 397-409 - John Kontoleon:
Soft error recovery in simplex and triplex memory systems. 410-423 - Krzysztof Górecki, Janusz Zarebski:
Electrothermal analysis of the self-excited push-pull DC-DC converter. 424-430 - Krzysztof Górecki:
Non-linear average electrothermal models of buck and boost converters for SPICE. 431-437 - Jong Kang Park, Jong Tae Kim, Myong-Chul Shin:
A CORDIC-based digital protective relay and its architecture. 438-447 - Tatjana R. Nikolic, Mile K. Stojcev, Goran Lj. Djordjevic:
CDMA bus-based on-chip interconnect infrastructure. 448-459
- Raúl José Martín-Palma, Carlo G. Pantano, Akhlesh Lakhtakia:
Towards the use of the conformal-evaporated-film-by-rotation technique in fabricating microelectronic circuits and microsystems. 460-462 - Chel-Jong Choi, Ha-Yong Yang, Hyo-Bong Hong, Jin-Gyu Kim, Sung-Yong Chang, Jouhahn Lee:
Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film. 463-465
Volume 49, Number 5, May 2009
- Peter Ersland, Roberto Menozzi:
Editorial. 467 - Fulvio Bertoluzza, Nicola Delmonte, Roberto Menozzi:
Three-dimensional finite-element thermal simulation of GaN-based HEMTs. 468-473 - Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson:
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. 474-477 - S. Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim:
Physical degradation of GaN HEMT devices under high drain bias reliability testing. 478-483 - C. Gil, Peter Ersland, A. Li:
Determining DC/RF survivability limits of GaAs semiconductor circuits. 484-487 - Charles S. Whitman:
Prediction of transmission line lifetimes over temperature and current density. 488-494
- N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra:
Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion. 495-498 - Jean-Baptiste Sauveplane, Emmanuel Scheid, A. Deram:
On the accurate determination of the thermomechanical properties of micro-scale material: Application to AlSi1% chip metallization of a power semiconductor device. 499-505 - Oi-Ying Wong, Wing-Shan Tam, Oi-Kan Shea, Shiu Hung Cheung, Jun Liu, Chi-Wah Kok, Hei Wong:
Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor. 506-509 - Zunxian Yang, Yun Huang, Xinxin Li, Guonan Chen:
Investigation and simulation on the dynamic shock response performance of packaged high-g MEMS accelerometer versus the impurity concentration of the piezoresistor. 510-516 - Jin-Sang Hwang, Myeong-Hwan Kim, Dong-Sung Seo, Jong-Woo Won, Doo-Kyung Moon:
Effects of soft segment mixtures with different molecular weight on the properties and reliability of UV curable adhesives for electrodes protection of plasma display panel (PDP). 517-522 - K. K. Jinka, A. Dasgupta, S. Ganesan, S. Ling:
Chip-on board technology for low temperature environment. Part II: Thermomechanical stresses in encapsulated ball-wedge bond wires. 523-529 - Bo Zhang, Han Ding, Xinjun Sheng:
Reliability study of board-level lead-free interconnections under sequential thermal cycling and drop impact. 530-536 - Nowshad Amin, Victor Lim, Foong Chee Seng, Rozaidi Razid, Ibrahim Ahmad:
A practical investigation on nickel plated copper heat spreader with different catalytic activation processes for flip-chip ball grid array packages. 537-543 - Wei-Chih Kuan, S. W. Liang, Chih Chen:
Effect of bump size on current density and temperature distributions in flip-chip solder joints. 544-550 - Mehdi Baradaran Tahoori, Hossein Asadi, Brian Mullins, David R. Kaeli:
Obtaining FPGA soft error rate in high performance information systems. 551-557 - W. S. Lau, Joy B. H. Tan, B. P. Singh:
Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 degreeC by Ohmic contact recess etching. 558-561 - Jianxin Zhu, Zhihua Chen:
High-accurate computation of wave propagation in complex waveguides for microchip optical interconnections. 562-565
Volume 49, Number 6, June 2009
- Andrzej Dziedzic:
IMAPS-CPMT Poland 2008 - Guest Editorial. 567-568 - Agata Skwarek, Krzysztof Witek, Jacek Ratajczak:
Risk of whiskers formation on the surface of commercially available tin-rich alloys under thermal shocks. 569-572 - Bálint Sinkovics, Olivér Krammer:
Board level investigation of BGA solder joint deformation strength. 573-578 - Selim Achmatowicz, Konrad Kielbasinski, Elzbieta Zwierkowska, Iwona Wyzkiewicz, Valentinas Baltrusaitis, Malgorzata Jakubowska:
A new photoimageable platinum conductor. 579-584 - Karol Malecha, Leszek J. Golonka:
Three-dimensional structuration of zero-shrinkage LTCC ceramics for microfluidic applications. 585-591 - Walter Smetana, Bruno Balluch, Günther Stangl, Sigrid Lüftl, Sabine Seidler:
Processing procedures for the realization of fine structured channel arrays and bridging elements by LTCC-Technology. 592-599 - Damian Nowak, Edward Mis, Andrzej Dziedzic, Jaroslaw Kita:
Fabrication and electrical properties of laser-shaped thick-film and LTCC microresistors. 600-606 - Edward Mis, Andrzej Dziedzic, Witold Mielcarek:
Microvaristors in thick-film and LTCC circuits. 607-613 - C. Belda, M. Fritsch, Claudia Feller, D. Westphal, G. Jung:
Stability of solid electrolyte based thick-film CO2 sensors. 614-620 - Mathieu Hautefeuille, Brendan O'Flynn, Frank H. Peters, Conor O'Mahony:
Miniaturised multi-MEMS sensor development. 621-626 - Ryszard Kisiel, Zbigniew Szczepanski:
Die-attachment solutions for SiC power devices. 627-629
- Alexandre Micol, Carmen Martin, Olivier Dalverny, Michel Mermet-Guyennet, Moussa Karama:
Reliability of lead-free solder in power module with stochastic uncertainty. 631-641 - Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang:
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability. 642-649 - Yuan-Wen Hsiao, Ming-Dou Ker:
Low-capacitance ESD protection design for high-speed I/O interfaces in a 130-nm CMOS process. 650-659 - Samrat L. Sabat, Leandro dos Santos Coelho, Ajith Abraham:
MESFET DC model parameter extraction using Quantum Particle Swarm Optimization. 660-666 - Meng Liu, Ai-Ping Xian:
Tin whisker growth on bulk Sn-Pb eutectic doping with Nd. 667-672
Volume 49, Number 7, July 2009
- José Ramón González, Manuel Vázquez, Neftalí Núñez, Carlos Algora, Ignacio Rey-Stolle, Beatriz Galiana:
Reliability analysis of temperature step-stress tests on III-V high concentrator solar cells. 673-680
- S. Baishya:
A surface potential and quasi-Fermi potential based drain current model for pocket-implanted MOS transistors in subthreshold regime. 681-688 - Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Denise C. Lugo Muñoz, Álvaro D. Latorre Rey, Ching-Sung Ho, Juin J. Liou:
Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction. 689-692 - Te-Kuang Chiang:
A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET's. 693-698 - Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta, R. S. Gupta:
Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect. 699-706 - Juan Antonio Maestro, Pedro Reviriego:
A method to eliminate the event accumulation problem from a memory affected by multiple bit upsets. 707-715 - P. Thangadurai, W. D. Kaplan, V. Mikhelashvili, Gadi Eisenstein:
The influence of electron-beam irradiation on electrical characteristics of metal-insulator-semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers. 716-720 - Sean W. King, J. A. Gradner:
Intrinsic stress fracture energy measurements for PECVD thin films in the SiOxCyNz: H system. 721-726 - Huimin Xie, Satoshi Kishimoto, Yanjie Li, Qingjun Liu, Yapu Zhao:
Fabrication of micro-moiré gratings on a strain sensor structure for deformation analysis with micro-moiré technique. 727-733 - Ming-Hwa R. Jen, Lee-Cheng Liu, Yi-Shao Lai:
Electromigration on void formation of Sn3Ag1.5Cu FCBGA solder joints. 734-745 - Asit Kumar Gain, Y. C. Chan, Ahmed Sharif, N. B. Wong, Winco K. C. Yung:
Interfacial microstructure and shear strength of Ag nano particle doped Sn-9Zn solder in ball grid array packages. 746-753 - F. X. Che, John H. L. Pang:
Vibration reliability test and finite element analysis for flip chip solder joints. 754-760 - Andrew Farris, Jianbiao Pan, Albert A. Liddicoat, Michael Krist, Nicholas A. Vickers, Brian J. Toleno, Dan Maslyk, Dongkai Shangguan, Jasbir Bath, Dennis Willie, David A. Geiger:
Drop impact reliability of edge-bonded lead-free chip scale packages. 761-770 - M. Mayer, J. T. Moon, John Persic:
Measuring stress next to Au ball bond during high temperature aging. 771-781 - Sari Merilampi, Teija Laine-Ma, Pekka Ruuskanen:
The characterization of electrically conductive silver ink patterns on flexible substrates. 782-790 - Robin Alastair Amy, Guglielmo S. Aglietti, Guy Richardson:
Sensitivity analysis of simplified Printed Circuit Board finite element models. 791-799 - Richárd Berényi:
Prototyping of a reliable 3D flexible IC cube package by laser micromachining. 800-805 - Jin-Sang Hwang, Ju-Yeol Kim, Seok-Chan Kang, Dong-Sung Seo, Younghwan Kwon:
Feasibility study of non-conductive film (NCF) for plasma display panel (PDP) application. 806-812