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ORCIDMicroelectronics Reliability, Volume 53
Volume 53, Number 1, January 2013
- C. Robert Kao
, Albert T. Wu, King-Ning Tu, Yi-Shao Lai:
Reliability of micro-interconnects in 3D IC packages. 1 - King-Ning Tu, Hsiang-Yao Hsiao, Chih Chen:
Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy. 2-6 - Cheng-Ta Ko, Kuan-Neng Chen:
Reliability of key technologies in 3D integration. 7-16 - Thomas Frank, Stéphane Moreau, Cédrick Chappaz, Patrick Leduc, Lucile Arnaud, Aurélie Thuaire, Emmanuel Chery, F. Lorut, Lorena Anghel, Gilles Poupon:
Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric. 17-29 - Wen-Hwa Chen, Ching-Feng Yu, Hsien-Chie Cheng, Yu-min Tsai, Su-Tsai Lu:
IMC growth reaction and its effects on solder joint thermal cycling reliability of 3D chip stacking packaging. 30-40 - Y. W. Chang, H. Y. Peng, R. W. Yang, Chih Chen, T. C. Chang, Chau-Jie Zhan, Jin-Ye Juang, Annie T. Huang:
Analysis of bump resistance and current distribution of ultra-fine-pitch microbumps. 41-46 - Y. J. Chen, C. K. Chung, C. R. Yang, C. Robert Kao:
Single-joint shear strength of micro Cu pillar solder bumps with different amounts of intermetallics. 47-52 - Tengfei Jiang, Suk-Kyu Ryu, Qiu Zhao, Jay Im, Rui Huang, Paul S. Ho:
Measurement and analysis of thermal stresses in 3D integrated structures containing through-silicon-vias. 53-62 - Anirudh Udupa, Ganesh Subbarayan, Cheng-Kok Koh:
Analytical estimates of stress around a doubly periodic arrangement of through-silicon vias. 63-69 - Xi Liu, Qiao Chen, Venkatesh Sundaram, Rao R. Tummala, Suresh K. Sitaraman:
Failure analysis of through-silicon vias in free-standing wafer under thermal-shock test. 70-78 - Yu-Lin Shen, R. W. Johnson:
Misalignment induced shear deformation in 3D chip stacking: A parametric numerical assessment. 79-89
- Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Alberto Terán Barrios, Juin J. Liou, Ching-Sung Ho:
Revisiting MOSFET threshold voltage extraction methods. 90-104
- Saurabh Kothawade, Koushik Chakraborty:
Analysis and mitigation of BTI aging in register file: An application driven approach. 105-113 - Nihaar N. Mahatme, Indranil Chatterjee, Akash Patki, Daniel B. Limbrick, Bharat L. Bhuva, Ronald D. Schrimpf, William H. Robinson:
An efficient technique to select logic nodes for single event transient pulse-width reduction. 114-117 - Yue Xu, Chun-bo Wu, Xiaoli Ji, Feng Yan, Yi Shi:
An improved multilevel cell programming technique for 4-bits/cell localized trapping SONOS memory devices. 118-122 - Zhouying Zhao, Lynn Rice, Harry Efstathiadis, Pradeep Haldar:
Annealing and thickness related performance and degradation of polymer solar cells. 123-128 - Jianguang Chen, Liang Feng, Yuhua Cheng:
Research and design of a power management chip for wireless powering capsule endoscopy. 129-135 - Chien-Yi Huang:
Reliability assessment of RFID reader through prognostics and health management. 136-144 - Toru Ikeda, Toshifumi Kanno, Nobuyuki Shishido, Noriyuki Miyazaki, Hiroyuki Tanaka, Takuya Hatao:
Non-linear analyses of strain in flip chip packages improved by the measurement using the digital image correlation method. 145-153 - B. Li, X. P. Zhang, Y. Yang, L. M. Yin, Michael G. Pecht:
Size and constraint effects on interfacial fracture behavior of microscale solder interconnects. 154-163 - Yap Boon Kar, Tan Cai Hui, Agileswari K. Ramasamy, Calvin Lo:
Comparison study on reliability performance for polymer core solder balls under multiple reflow and HTS stress tests. 164-173 - Xin Li, Gang Chen, Xu Chen, Guo-Quan Lu, Lei Wang, Yun-Hui Mei:
High temperature ratcheting behavior of nano-silver paste sintered lap shear joint under cyclic shear force. 174-181
Volume 53, Number 2, February 2013
- Vesselin K. Vassilev:
Advances in ESD protection for ICs. 183 - Timothy J. Maloney:
HBM tester waveforms, equivalent circuits, and socket capacitance. 184-189 - Theo Smedes, M. Polewski, A. van IJzerloo, Jean Luc Lefebvre, M. Dekker:
Pitfalls for CDM calibration procedures. 190-195 - Yuanzhong Paul Zhou, David Ellis, Jean-Jacques Hajjar, Andrew Olney, Juin J. Liou:
vfTLP-VTH: A new method for quantifying the effectiveness of ESD protection for the CDM classification test. 196-204 - Kil-Ho Kim, Yong-Jin Seo:
Electrostatic discharge (ESD) protection of N-type silicon controlled rectifier with P-type MOSFET pass structure for high voltage operating I/O application. 205-207 - Chih-Ting Yeh, Ming-Dou Ker:
PMOS-based power-rail ESD clamp circuit with adjustable holding voltage controlled by ESD detection circuit. 208-214 - Mototsugu Okushima, Junji Tsuruta:
Secondary ESD clamp circuit for CDM protection of over 6 Gbit/s SerDes application in 40 nm CMOS. 215-220 - Nicolas Monnereau, Fabrice Caignet, David Trémouilles, Nicolas Nolhier, Marise Bafleur:
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation. 221-228
- Vincent Fiori, Sébastien Gallois-Garreignot, Hervé Jaouen, Clément Tavernier:
Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond. 229-235 - Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter. 236-244 - Syed Askari, Mehrdad Nourani:
An on-chip sensor to measure and compensate static NBTI-induced degradation in analog circuits. 245-253 - S. L. Jang, Jiann-Shiun Yuan, S. D. Yen, E. Kritchanchai, G. W. Huang:
Experimental evaluation of hot electron reliability on differential Clapp-VCO. 254-258 - Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou:
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. 259-264 - Wen-Kuan Yeh, Po-Ying Chen, Kwang-Jow Gan, Jer-Chyi Wang, Chao-Sung Lai:
The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET. 265-269 - Durga Misra, Jyothi Kasinath, Arun N. Chandorkar:
Voltage and current stress induced variations in TiN/HfSixOy/TiN MIM capacitors. 270-273 - Jacques Tardy, Mohsen Erouel:
Stability of pentacene transistors under concomitant influence of water vapor and bias stress. 274-278 - Laura Ciammaruchi, Stefano Penna, Andrea Reale, Thomas M. Brown, Aldo Di Carlo:
Acceleration factor for ageing measurement of dye solar cells. 279-281 - Luowei Zhou, Shengqi Zhou, Mingwei Xu:
Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off. 282-287 - Huang-Kuang Kung, Hung-Shyong Chen, Ming-Cheng Lu:
The wire sag problem in wire bonding technology for semiconductor packaging. 288-296 - Tong Hong Wang, Ching-I Tsai, Chang-Chi Lee, Yi-Shao Lai:
Study of factors affecting warpage of HFCBGA subjected to reflow soldering-liked profile. 297-302 - Venkatesh Arasanipalai Raghavan, Brian Roggeman, Michael Meilunas, Peter Borgesen:
Effects of 'Latent Damage' on pad cratering: Reduction in life and a potential change in failure mode. 303-313 - Hironori Tohmyoh, Shoho Ishikawa, Satoshi Watanabe, Motohisa Kuroha, Yoshikatsu Nakano:
Estimation and visualization of the fatigue life of Pb-free SAC solder bump joints under thermal cycling. 314-320 - Qinghua Zhao, Anmin Hu, Ming Li, Jiangyan Sun:
Effect of electroplating layer structure on shear property and microstructure of multilayer electroplated Sn-3.5Ag solder bumps. 321-326 - Yang Yang, Yongzhi Li, Hao Lu, Chun Yu, Junmei Chen:
Interdiffusion at the interface between Sn-based solders and Cu substrate. 327-333 - C. Y. Khor, Mohd Zulkifly Abdullah:
Analysis of fluid/structure interaction: Influence of silicon chip thickness in moulded packaging. 334-347
Volume 53, Number 3, March 2013
- Ganesh C. Patil, Shafi Qureshi:
Engineering buried oxide in dopant-segregated Schottky barrier SOI MOSFET for nanoscale CMOS circuits. 349-355 - Vladimír Kosel, Stefano de Filippis, Liu Chen, Stefan Decker, Andrea Irace:
FEM simulation approach to investigate electro-thermal behavior of power transistors in 3-D. 356-362 - Abhijit Biswas, Swagata Bhattacherjee:
Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs. 363-370 - Jie Chen, Zhengwei Du:
Device simulation studies on latch-up effects in CMOS inverters induced by microwave pulse. 371-378 - Naushad Alam, Bulusu Anand, Sudeb Dasgupta:
The impact of process-induced mechanical stress on CMOS buffer design using multi-fingered devices. 379-385 - Sung-Jae Chang, Maryline Bawedin, Wade Xiong, Jong-Hyun Lee, Jung-Hee Lee, Sorin Cristoloveanu:
Remote carrier trapping in FinFETs with ONO buried layer: Temperature effects. 386-393 - N. Lukyanchikova, N. Garbar, Valeriya Kudina, A. Smolanka, Eddy Simoen, Cor Claeys:
Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry. 394-399 - Liqiang Han, Suying Yao, Jiangtao Xu, Chao Xu:
Characteristics of random telegraph signal noise in time delay integration CMOS image sensor. 400-404 - Hsien-Chin Chiu, Chao-Wei Lin, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau:
Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate. 405-408 - Guoxuan Qin, Guogong Wang, Ningyue Jiang, Jianguo Ma, Zhenqiang Ma:
On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions. 409-413 - Zlatica Marinkovic, Nenad Ivkovic, Olivera Pronic-Rancic, Vera Markovic, Alina Caddemi:
Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors. 414-419 - Chao-Wei Tang, Kuan-Ming Li, Mike Yang, Hsueh-Chuan Liao, Hong-Tsu Young:
Improving the dielectric breakdown field of silicon light-emitting-diode sub-mount by a hybrid nanosecond laser drilling strategy. 420-427 - Mika Maaspuro, Aulis Tuominen:
Thermal analysis of LED spot lighting device operating in external natural or forced heat convection. 428-434 - Bong-Min Song, Bongtae Han, Joon-Hyun Lee:
Optimum design domain of LED-based solid state lighting considering cost, energy consumption and reliability. 435-442 - Artur Wymyslowski, Lukasz Dowhan:
Application of nanoindentation technique for investigation of elasto-plastic properties of the selected thin film materials. 443-451 - P. Jesudoss, Alan Mathewson, W. M. D. Wright, Frank A. Stam:
Mechanical assessment of an anisotropic conductive adhesive joint of a direct access sensor on a flexible substrate for a swallowable capsule application. 452-462 - Jong-Ning Aoh, Cheng-Li Chuang, Min-Yi Kang:
Reliability of TCT and HH/HT test performed in chips and flex substrates assembled by thermosonic flip-chip bonding process. 463-472 - Vemal Raja Manikam, Khairunisak Abdul Razak, Kuan Yew Cheong:
Reliability of sintered Ag80-Al20 die attach nanopaste for high temperature applications on SiC power devices. 473-480 - Anupama Tiwari, Dilip Roy:
Estimation of reliability of mobile handsets using Cox-proportional hazard model. 481-487 - Aiwu Ruan, Shi Kang, Yu Wang, Xiao Han, Zujian Zhu, Yongbo Liao, Peng Li:
A Built-In Self-Test (BIST) system with non-intrusive TPG and ORA for FPGA test and diagnosis. 488-498
- D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar:
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics. 499-504 - Kong-Pang Pun, Lei Sun, Bing Li:
Unit capacitor array based SAR ADC. 505-508 - Seung Eun Lee:
Adaptive error correction in Orthogonal Latin Square Codes for low-power, resilient on-chip interconnection network. 509-511
Volume 53, Number 4, April 2013
- Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene:
A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues. 513-519 - Toufik Bentrcia, Fayçal Djeffal, M. Chahdi:
An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects. 520-527 - Jun-Hyuk Seo, Ji-Young Kim, Young-Bae Kim, Dong-Wook Kim, Haeri Kim, Hyun Cho, Duck-Kyun Choi:
Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide. 528-532 - Narjes Moghadam, Mohammad Kazem Moravvej-Farshi, Mohammad Reza Aziziyan:
Design and simulation of MOSCNT with band engineered source and drain regions. 533-539 - Mahdiar Hosein Ghadiry, Mahdieh Nadi Senjani, M. Bahadoran, Asrulnizam Bin Abd Manaf, H. Karimi, Hatef Sadeghi:
An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors. 540-543 - Xingming Long, Rui-Jin Liao, Jing Zhou, Zhi Zeng:
Thermal uniformity of packaging multiple light-emitting diodes embedded in aluminum-core printed circuit boards. 544-553 - Han-Kuei Fu, Chien-Ping Wang, Hsin-Chien Chiang, Tzung-Te Chen, Chiu-Ling Chen, Pei-Ting Chou:
Evaluation of temperature distribution of LED module. 554-559 - V. S. Balderrama, Magali Estrada, Aurelien Viterisi, Pilar Formentin, Josep Pallarès, Josep Ferré-Borrull, Emilio Palomares, Lluís F. Marsal:
Correlation between P3HT inter-chain structure and Jsc of P3HT: PC[70]BM blends for solar cells. 560-564 - Jawar Singh, Narayanan Vijaykrishnan:
A highly reliable NBTI Resilient 6T SRAM cell. 565-572 - Orazio Aiello, Franco Fiori:
A new MagFET-based integrated current sensor highly immune to EMI. 573-581 - Adam Golda, Andrzej Kos:
Optimum control of microprocessor throughput under thermal and energy saving constraints. 582-591 - Anindya Jana, Nameirakpam Basanta Singh, J. K. Sing, Subir Kumar Sarkar:
Design and simulation of hybrid CMOS-SET circuits. 592-599 - Ernest E. S. Ong, Mohd Zulkifly Abdullah, W. K. Loh, C. K. Ooi, R. Chan:
FSI implications of EMC rheological properties to 3D IC with TSV structures during plastic encapsulation process. 600-611 - Masaki Omiya, Kozo Koiwa, Nobuyuki Shishido, Shoji Kamiya, Chuantong Chen, Hisashi Sato, Masahiro Nishida, Takashi Suzuki, Tomoji Nakamura, Toshiaki Suzuki, Takeshi Nokuo:
Experimental and numerical evaluation of interfacial adhesion on Cu/SiN in LSI interconnect structures. 612-621 - Xinjun Sheng, Lei Jia, Zhenhua Xiong, Zhiping Wang, Han Ding:
ACF-COG interconnection conductivity inspection system using conductive area. 622-628 - Yao Yao, Leon M. Keer:
Cohesive fracture mechanics based numerical analysis to BGA packaging and lead free solders under drop impact. 629-637 - Seong-Hun Na, Seung-Kyu Lim, Jin-Soo Kim, Hwa-Sun Park, Heung-Jae Oh, Jin-Won Choi, Su-Jeong Suh:
Experimental study of bump void formation according to process conditions. 638-644 - Gang Chen, Ze-Sheng Zhang, Yun-Hui Mei, Xin Li, Guo-Quan Lu, Xu Chen:
Ratcheting behavior of sandwiched assembly joined by sintered nanosilver for power electronics packaging. 645-651 - Qinghua Wang, Satoshi Kishimoto, Huimin Xie, Zhanwei Liu, Xinhao Lou:
In situ high temperature creep deformation of micro-structure with metal film wire on flexible membrane using geometric phase analysis. 652-657
Volume 53, Number 5, May 2013
- Ryuji Tomita, Hidehiko Kimura, M. Yasuda, K. Maeda, S. Ueno, T. Tomizawa, Y. Kunimune, H. Nakamura, M. Moritoki, Hiroshi Iwai:
Formation of high resistivity phases of nickel silicide at small area. 659-664 - Ryuji Tomita, Hidehiko Kimura, M. Yasuda, K. Maeda, S. Ueno, T. Tonegawa, T. Fujimoto, M. Moritoki, Hiroshi Iwai:
Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions. 665-669 - Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi:
An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities. 670-675 - A. A. Dakhel, W. E. Alnaser:
Experimental analysis of Ga2O3: Ti films grown on Si and glass substrates. 676-680 - Libor Pína, Jan Vobecký:
High-power silicon P-i-N diode with cathode shorts: The impact of electron irradiation. 681-686 - Lingli Jiang, Hang Fan, Ming Qiao, Bo Zhang, Zhaoji Li:
ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications. 687-693 - Yamin Zhang, Shiwei Feng, Hui Zhu, Jianwei Zhang, Bing Deng:
Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs. 694-700 - Keng Chen, Nadarajah Narendran:
Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis. 701-705 - Viviana Mulloni, Francesco Solazzi, F. Ficorella, A. Collini, Benno Margesin:
Influence of temperature on the actuation voltage of RF-MEMS switches. 706-711 - J. Assaf:
Extraction of noise spectral densities(intrinsic and irradiation contributions) of a charge preamplifier based on JFET. 712-717 - Naushad Alam, Bulusu Anand, Sudeb Dasgupta:
The impact of process-induced mechanical stress in narrow width devices and variable-taper CMOS buffer design. 718-724 - Qianwen Chen, Wuyang Yu, Cui Huang, Zhimin Tan, Zheyao Wang:
Reliability of through-silicon-vias (TSVs) with benzocyclobutene liners. 725-732 - H. X. Xie, Nikhilesh Chawla:
Mechanical shock behavior of Sn-3.9Ag-0.7Cu and Sn-3.9Ag-0.7Cu-0.5Ce solder joints. 733-740 - Shoho Ishikawa, Hironori Tohmyoh, Satoshi Watanabe, Tomonori Nishimura, Yoshikatsu Nakano:
Extending the fatigue life of Pb-free SAC solder joints under thermal cycling. 741-747 - Xiao-feng Wei, Yu-kun Zhang, Ri-chu Wang, Yan Feng:
Microstructural evolution and shear strength of AuSn20/Ni single lap solder joints. 748-754 - Balázs Illés, Barbara Horváth:
Whiskering behaviour of immersion tin surface coating. 755-760 - Didier Chicot, K. Tilkin, K. Jankowski, Artur Wymyslowski:
Reliability analysis of solder joints due to creep and fatigue in microelectronic packaging using microindentation technique. 761-766 - Chenglong Liao, Dan Guo, Shizhu Wen, Xinchun Lu, Jianbin Luo:
Stress analysis of Cu/low-k interconnect structure during whole Cu-CMP process using finite element method. 767-773 - Peter Filipp Fuchs, Gerald Pinter, Zoltan Major:
PCB drop test lifetime assessment based on simulations and cyclic bend tests. 774-781
Volume 53, Number 6, June 2013
- Qiang Miao:
Enabling technologies for sustainable battery: Advances in battery reliability. 783 - Laurent Gagneur, Ana Lucia Driemeyer-Franco, Christophe Forgez, Guy Friedrich:
Modeling of the diffusion phenomenon in a lithium-ion cell using frequency or time domain identification. 784-796 - Weilin Luo, Chao Lyu, Lixin Wang, Liqiang Zhang:
An approximate solution for electrolyte concentration distribution in physics-based lithium-ion cell models. 797-804 - Qiang Miao, Lei Xie, Hengjuan Cui, Wei Liang, Michael G. Pecht:
Remaining useful life prediction of lithium-ion battery with unscented particle filter technique. 805-810 - Yinjiao Xing, Eden W. M. Ma, Kwok-Leung Tsui, Michael G. Pecht:
An ensemble model for predicting the remaining useful performance of lithium-ion batteries. 811-820 - Bing Long, Weiming Xian, Lin Jiang, Zhen Liu:
An improved autoregressive model by particle swarm optimization for prognostics of lithium-ion batteries. 821-831 - Datong Liu, Jingyue Pang, Jianbao Zhou, Yu Peng, Michael G. Pecht:
Prognostics for state of health estimation of lithium-ion batteries based on combination Gaussian process functional regression. 832-839 - Wei He, Nicholas Williard, Chaochao Chen, Michael G. Pecht:
State of charge estimation for electric vehicle batteries using unscented kalman filtering. 840-847
- Michelly de Souza, Bruna Cardoso Paz, Denis Flandre, Marcelo Antonio Pavanello:
Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs. 848-855 - J. S. Yuan, E. Kritchanchai:
Power amplifier resilient design for process, voltage, and temperature variations. 856-860 - Xiaowu Cai, Junxiu Wei, Chao Liang, Zhe Gao, Chuan Lv:
Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process. 861-866 - Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt:
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. 867-871 - Eric Heller, Sukwon Choi, Donald Dorsey, Ramakrishna Vetury, Samuel Graham:
Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs. 872-877 - J.-S. Yuan, Y. Wang, J. Steighner, H.-D. Yen, S.-L. Jang, G.-W. Huang, W.-K. Yeh:
Reliability analysis of pHEMT power amplifier with an on-chip linearizer. 878-884 - Romain Cauchois, Man Su Yin, Aline Gouantes, Xavier Boddaert:
RFID tags for cryogenic applications: Experimental and numerical analysis of thermo-mechanical behaviour. 885-891 - Sri Chaitra Chavali, Yuvraj Singh, Ganesh Subbarayan, Anurag Bansal, Mudasir Ahmad:
Effect of pad surface finish and reflow cooling rate on the microstructure and the mechanical behavior of SnAgCu solder alloys. 892-898 - P. J. Shang, L. Zhang, Zhi-Quan Liu, J. Tan, J. K. Shang:
Ex situ observations of fast intermetallic growth on the surface of interfacial region between eutectic SnBi solder and Cu substrate during solid-state aging process. 899-905 - Wei-Chih Chiu, Bing-Yue Tsui:
Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process. 906-911 - Ramin Rajaei, Mahmoud Tabandeh, Mahdi Fazeli:
Low cost soft error hardened latch designs for nano-scale CMOS technology in presence of process variation. 912-924
Volume 53, Number 7, July 2013
- Ephraim Suhir:
Could electronics reliability be predicted, quantified and assured? 925-936 - Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. 937-946 - K. S. Kim, H. J. Kim, P. H. Choi, H. S. Park, I. H. Joo, J. E. Song, D. H. Song, Byoung Deog Choi:
Hot hole-induced device degradation by drain junction reverse current. 947-951 - Qiang Cui, Shuyun Zhang, Juin J. Liou:
Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology. 952-955 - Michal Jablonski, Frederick Bossuyt, Jan Vanfleteren, Thomas Vervust, H. de Vries:
Reliability of a stretchable interconnect utilizing terminated, in-plane meandered copper conductor. 956-963 - Wei Chen, Raphael Okereke, Suresh K. Sitaraman:
Compliance analysis of multi-path fan-shaped interconnects. 964-974 - Fan Yang, Shaker A. Meguid:
Efficient multi-level modeling technique for determining effective board drop reliability of PCB assembly. 975-984 - Yingzhi Zeng, Kewu Bai, Hongmei Jin:
Thermodynamic study on the corrosion mechanism of copper wire bonding. 985-1001 - Alireza Rezvani, Aashish Shah, M. Mayer, Norman Y. Zhou, J. T. Moon:
Role of impact ultrasound on bond strength and Al pad splash in Cu wire bonding. 1002-1008 - Barbara Horváth:
Influence of copper diffusion on the shape of whiskers grown on bright tin layers. 1009-1020 - Huai-Hui Ren, Xi-Shu Wang, Su Jia:
Fracture analysis on die attach adhesives for stacked packages based on in-situ testing and cohesive zone model. 1021-1028 - Yin Lee Goh, Agileswari K. Ramasamy, Farrukh Hafiz Nagi, Aidil Azwin Zainul Abidin:
DSP based fuzzy and conventional overcurrent relay controller comparisons. 1029-1035 - Sandra M. Djosic, Milun Jevtic:
Dynamic voltage and frequency scaling algorithm for fault-tolerant real-time systems. 1036-1042
Volume 53, Number 8, August 2013
- Artur Wymyslowski:
Guest Editorial: 2012 EuroSimE International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems. 1043-1044 - Federica Confalonieri, Giuseppe Cocchetti, Aldo Ghisi, Alberto Corigliano:
A domain decomposition method for the simulation of fracture in polysilicon MEMS. 1045-1054 - Stoyan Stoyanov, Chris Bailey, M. O. Alam, Chunyan Yin, Chris Best, Peter Tollafield, Rob Crawford, Mike Parker, Jim Scott:
Modelling methodology for thermal analysis of hot solder dip process. 1055-1067 - M. H. M. Kouters, G. H. M. Gubbels, O. Dos Santos Ferreira:
Characterization of intermetallic compounds in Cu-Al ball bonds: Mechanical properties, interface delamination and thermal conductivity. 1068-1075 - Jiri Jakovenko, J. Formánek, X. Perpiñà, Xavier Jordà, Miquel Vellvehí, Robert J. Werkhoven, Miroslav Husák, J. M. G. Kunen, P. Bancken, P. J. Bolt, A. Gasse:
Design methodologies for reliability of SSL LED boards. 1076-1083 - B. Pardo, A. Gasse, A. Fargeix, Jiri Jakovenko, Robert J. Werkhoven, Xavier Perpiñà, Xavier Jordà, Miquel Vellvehí, T. Van Weelden, P. Bancken:
Thermal resistance investigations on new leadframe-based LED packages and boards. 1084-1094 - Frank Kraemer, Steffen Wiese, Erik Peter, Jonas Seib:
Mechanical problems of novel back contact solar modules. 1095-1100 - Nancy Iwamoto:
Molecularly derived mesoscale modeling of an epoxy/Cu interface: Interface roughness. 1101-1110 - O. Hölck, Jörg Bauer, Tanja Braun, Hans Walter, Olaf Wittler, Bernhard Wunderle, Klaus-Dieter Lang:
Transport of moisture at epoxy-SiO2 interfaces investigated by molecular modeling. 1111-1116
- Prasanna Tamilselvan, Pingfeng Wang, Michael G. Pecht:
A multi-attribute classification fusion system for insulated gate bipolar transistor diagnostics. 1117-1129 - Hsien-Chin Chiu, Hsiang-Chun Wang, Chao-Wei Lin, Yi-Cheng Luo, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang:
Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design. 1130-1136 - ShiQing Gao, YouHe Zhou:
Self-alignment of micro-parts using capillary interaction: Unified modeling and misalignment analysis. 1137-1148 - Hualiang Huang, Zhiquan Pan, Yubing Qiu, Xingpeng Guo:
Electrochemical corrosion behaviour of copper under periodic wet-dry cycle condition. 1149-1158 - Hao-Wen Hsueh, Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen:
Effect of the direct current on microstructure, tensile property and bonding strength of pure silver wires. 1159-1163
- Jianxin Zhu, Zhaochen Zhu:
High-precision Berenger modes of dual-layer micro-waveguides terminated with a perfectly matched layer for on-chip optical interconnections. 1164-1167
Volume 53, Numbers 9-11, September - November 2013
- Nathalie Labat, François Marc:
Editorial. 1169-1170
- Christopher L. Henderson:
Failure analysis techniques for a 3D world. 1171-1178 - Charles E. Bauer, Herbert J. Neuhaus:
Embedded packaging and assembly; Reliability and supply chain implications. 1179-1182
- Chang-Chih Chen, Fahad Ahmed, Linda Milor:
Impact of NBTI/PBTIon SRAMs within microprocessor systems: Modeling, simulation, and analysis. 1183-1188 - Arwa Ben Dhia, Samuel N. Pagliarini, Lirida Alves de Barros Naviner, Habib Mehrez, Philippe Matherat:
A defect-tolerant area-efficient multiplexer for basic blocks in SRAM-based FPGAs. 1189-1193 - Corinne Bergès, Julien Goxe:
Benefits of field failure distribution modeling to the failure analysis. 1194-1198 - P. Steinhorst, Tilo Poller, Josef Lutz:
Approach of a physically based lifetime model for solder layers in power modules. 1199-1202 - Paolo Lorenzi, Rosario Rao, T. Prifti, Fernanda Irrera:
Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM. 1203-1207 - Hassen Aziza, Marc Bocquet, Jean-Michel Portal, Mathieu Moreau, Christophe Muller:
A novel test structure for OxRRAM process variability evaluation. 1208-1212 - Nicoleta Cucu Laurenciu, Sorin Dan Cotofana:
A nonlinear degradation path dependent end-of-life estimation framework from noisy observations. 1213-1217 - Pierre Canet, Jérémy Postel-Pellerin, Jean-Luc Ogier:
Access resistor modelling for EEPROM's retention test vehicle. 1218-1223 - Wang Kang, Weisheng Zhao, Zhaohao Wang, Yue Zhang, Jacques-Olivier Klein, Youguang Zhang, Claude Chappert, Dafine Ravelosona:
A low-cost built-in error correction circuit design for STT-MRAM reliability improvement. 1224-1229 - Samuel N. Pagliarini, Arwa Ben Dhia, Lirida Alves de Barros Naviner, Jean-François Naviner:
SNaP: A novel hybrid method for circuit reliability assessment under multiple faults. 1230-1234 - S. I. Chan, J. H. Kang, Joong Soon Jang:
Reliability improvement of automotive electronics based on environmental stress screen methodology. 1235-1238
- S. Amara-Dababi, Ricardo C. Sousa, H. Béa, Claire Baraduc, Ken Mackay, Bernard Dieny:
Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise. 1239-1242 - V. Velayudhan, Francisco Gámiz, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. 1243-1246 - Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications. 1247-1251 - Keith A. Jenkins, Pong-Fei Lu:
On-chip circuit to monitor long-term NBTI and PBTI degradation. 1252-1256 - X. Saura, D. Moix, Jordi Suñé, Paul K. Hurley, Enrique Miranda:
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. 1257-1260 - M. K. Lim, Vassilios A. Chouliaras, Chee Lip Gan, Vincent M. Dwyer:
Bidirectional electromigration failure. 1261-1265 - Sonia Ben Dhia, Alexandre Boyer:
Long-term Electro-Magnetic Robustness of Integrated Circuits: EMRIC research project. 1266-1272 - Jianfei Wu, Alexandre Boyer, Jiancheng Li, Sonia Bendhia, Bertrand Vrignon:
LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing. 1273-1277 - Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran:
On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress. 1278-1283 - Philippe Galy, T. Lim, J. Bourgeat, Jean Jimenez, Boris Heitz, D. Marin-Cudraz, Ph. Benech, J. M. Fournier:
Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application. 1284-1287 - Jian-Zhi Zhu, François Fouquet, Blaise Ravelo, Ali Alaeddine, Moncef Kadi:
Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS). 1288-1292 - K. Guetarni, Antoine D. Touboul, Jerome Boch, L. Foro, A. Privat, Alain Michez, J.-R. Vaillé, Frédéric Saigné:
Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model. 1293-1299 - Alexandre Sarafianos, Cyril Roscian, Jean-Max Dutertre, Mathieu Lisart, Assia Tria:
Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell. 1300-1305 - Alain Michez, Jerome Boch, S. Dhombres, Frédéric Saigné, Antoine D. Touboul, J.-R. Vaillé, Laurent Dusseau, E. Lorfèvre, R. Ecoffet:
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET. 1306-1310 - Luca Sterpone:
SEL-UP: A CAD tool for the sensitivity analysis of radiation-induced Single Event Latch-Up. 1311-1314 - Nogaye Mbaye, Vincent Pouget, Frédéric Darracq, Dean Lewis:
Characterization and modeling of laser-induced single-event burn-out in SiC power diodes. 1315-1319 - Jean-Max Dutertre, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, Giorgio Di Natale:
Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection. 1320-1324 - I. El Moukhtari, Vincent Pouget, C. Larue, Frédéric Darracq, Dean Lewis, Philippe Perdu:
Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell. 1325-1328 - Seung Min Lee, Hyun Jun Jang, Jong Tae Park:
Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors. 1329-1332 - Joan Marc Rafí, M. B. González, Kenichiro Takakura, I. Tsunoda, M. Yoneoka, Oihane Beldarrain, Miguel Zabala, Francesca Campabadal:
2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness. 1333-1337 - Pyung Moon, Jun Yeong Lim, Tae-Un Youn, Keum-Whan Noh, Sung-Kye Park, Ilgu Yun:
Methodology for improvement of data retention in floating gate flash memory using leakage current estimation. 1338-1341 - Vl. Kolkovsky, K. Lukat:
Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO2. 1342-1345 - X. Saura, X. Lian, David Jiménez, Enrique Miranda, Xavier Borrisé, Francesca Campabadal, Jordi Suñé:
Field-effect control of breakdown paths in HfO2 based MIM structures. 1346-1350 - Seonhaeng Lee, Cheolgyu Kim, Hyeokjin Kim, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs. 1351-1354 - Cicero Nunes, Paulo F. Butzen, André Inácio Reis, Renato P. Ribas:
BTI, HCI and TDDB aging impact in flip-flops. 1355-1359 - Paulo F. Butzen, Vinícius Dal Bem, André Inácio Reis, Renato P. Ribas:
BTI and HCI first-order aging estimation for early use in standard cell technology mapping. 1360-1364 - Aymen Moujbani, Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein, Lutz Meinshausen:
Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects. 1365-1369
- Yasunori Goto, Toru Matsumoto, Kiyoshi Nikawa:
Observation of impurity diffusion defect in IGBT using a laser terahertz emission microscope technique. 1370-1374 - W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet:
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. 1375-1380 - Emre Ilgünsatiroglu, Alexey Yu. Illarionov, Mauro Ciappa:
Unstructured tetrahedric meshes for the description of complex three-dimensional sample geometries in Monte Carlo simulation of scanning electron microscopy images for metrology applications. 1381-1386 - Samuel Chef, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak:
Frequency mapping in dynamic light emission with wavelet transform. 1387-1392 - Yann Weber, Julien Goxe, M. Castignolles:
Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion. 1393-1398 - Massimo Vanzi, Simona Podda, Elodia Musu, Robert Cao:
XEBIC at the Dual Beam. 1399-1402 - Franc Dugal, Mauro Ciappa:
Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules. 1403-1408 - Hiroaki Shiratsuchi, Kohei Matsushita, Ichiro Omura:
IGBT chip current imaging system by scanning local magnetic field. 1409-1412 - Ralf Heiderhoff, H. Li, Thomas Riedl:
Dynamic Near-Field Scanning Thermal Microscopy on thin films. 1413-1417 - Jan Gaudestad, Vladimir Talanov, M. Marchetti:
Opens localization on silicon level in a Chip Scale Package using space domain reflectometry. 1418-1421 - Kristian Bonderup Pedersen, Peter Kjær Kristensen, Vladimir N. Popok, Kjeld Pedersen:
Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules. 1422-1426 - Andreas Rummel, Klaus Schock, Matthias Kemmler, Andrew Smith, Stephan Kleindiek:
Repairing bonding wire connections using a microsoldering unit inside an SEM. 1427-1429 - Alexander Hofer, Roland Biberger, Günther Benstetter, Björn Wilke, Holger Göbel:
Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films. 1430-1433 - Chris Richardson, Gary Liechty, Clay Smith, Michael Karow:
Contoured device sample preparation technique for ±5 μm remaining silicon thicknesses that meets solid immersion lens requirements. 1434-1438
- P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann:
Qualification of 50 V GaN on SiC technology for RF power amplifiers. 1439-1443 - Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany:
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. 1444-1449 - Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat:
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. 1450-1455 - Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics. 1456-1460 - Alessandro Chini, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. 1461-1465 - Alain Bensoussan, Ronan Marec, Jean Luc Muraro, L. Portal, Philippe Calvel, Catherine Barillot, Marie Genevieve Perichaud, Laurent Marchand, Gael Vignon:
GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing. 1466-1470 - Andre G. Metzger, Vincenzo d'Alessandro, Niccolò Rinaldi, Peter J. Zampardi:
Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers. 1471-1475 - Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso:
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. 1476-1480 - Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto:
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs. 1481-1485 - Francesco Giuliani, Nicola Delmonte, Paolo Cova, Roberto Menozzi:
Temperature-dependent reverse-bias stress of normally-off GaN power FETs. 1486-1490 - S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau:
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. 1491-1495
- Mauro A. Bettiati:
High optical strength GaAs-based laser structures. 1496-1500 - Vanesa Hortelano, Julian Anaya, Jorge Souto, Juan Jiménez, J. Périnet, François J. Laruelle:
Defect signatures in degraded high power laser diodes. 1501-1505 - Ephraim Suhir, Laurent Béchou:
Saint-Venant's principle and the minimum length of a dual-coated optical fiber specimen in reliability (proof) testing. 1506-1509 - Simone Vaccari, Matteo Meneghini, Alessio Griffoni, Diego Barbisan, Marco Barbato, S. Carraro, Marco La Grassa, Gaudenzio Meneghesso, Enrico Zanoni:
ESD characterization of multi-chip RGB LEDs. 1510-1513 - A. Royon, K. Bourhis, Laurent Béchou, Thierry Cardinal, Lionel Canioni, Yannick Deshayes:
Durability study of a fluorescent optical memory in glass studied by luminescence spectroscopy. 1514-1518 - Yang Gi Yoon, J. H. Kang, I. H. Jang, S. I. Chan, Joong Soon Jang:
Conclusion of the accelerated stress conditions affecting phosphor-converted LEDs using the fractional factorial design method. 1519-1523 - Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni:
"Hot-plugging" of LED modules: Electrical characterization and device degradation. 1524-1528 - Massimo Vanzi, Giovanna Mura, M. Marongiu, T. Tomasi:
Optical losses in single-mode laser diodes. 1529-1533 - Carlo De Santi, Matteo Meneghini, S. Carraro, Simone Vaccari, Nicola Trivellin, Stefania Marconi, Michael Marioli, Gaudenzio Meneghesso, Enrico Zanoni:
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes. 1534-1537 - Giovanna Mura, Massimo Vanzi, Giulia Marcello, Robert Cao:
The role of the optical trans-characteristics in laser diode analysis. 1538-1542
- Toshitaka Ishizaki, T. Satoh, A. Kuno, A. Tane, Masashi Yanase, F. Osawa, Yasushi Yamada:
Thermal characterizations of Cu nanoparticle joints for power semiconductor devices. 1543-1547 - Ju Dy Lim, Susan Yeow Su Yi, MinWoo Daniel Rhee, Kam Chew Leong, Chee Cheong Wong:
Surface roughness effect on copper-alumina adhesion. 1548-1552 - Peter Jacob, Giovanni Nicoletti:
Failure causes generating aluminium protrusion/extrusion. 1553-1557 - Bernhard Czerny, I. Paul, Golta Khatibi, Markus Thoben:
Experimental and analytical study of geometry effects on the fatigue life of Al bond wire interconnects. 1558-1562 - Peyman Rafiee, Golta Khatibi, N. Nelhiebel, Rainer Pelzer:
Application of quantitative modal analysis for investigation of thermal degradation of microelectronic packages. 1563-1567 - Miao Cai, D. J. Xie, W. B. Chen, B. Y. Wu, Dao-Guo Yang, G. Q. Zhang:
A novel soldering method to evaluate PCB pad cratering for pin-pull testing. 1568-1574 - Lutz Meinshausen, Hélène Frémont, Kirsten Weide-Zaage, Bernard Plano:
Electro- and thermomigration-induced IMC formation in SnAg3.0Cu0.5 solder joints on nickel gold pads. 1575-1580 - F. L. Lau, Riko I. Made, Wahyuaji Narottama Putra, J. Z. Lim, V. C. Nachiappan, J. L. Aw, Chee Lip Gan:
Electrical behavior of Au-Ge eutectic solder under aging for solder bump application in high temperature Electronics. 1581-1586 - Peter Borgesen, S. Hamasha, Mazin Obaidat, V. Raghavan, X. Dai, Michael Meilunas, M. Anselm:
Solder joint reliability under realistic service conditions. 1587-1591 - Raphel Riva, Cyril Buttay, Bruno Allard, Pascal Bevilacqua:
Migration issues in sintered-silver die attaches operating at high temperature. 1592-1596 - J. B. Jullien, Hélène Frémont, Jean-Yves Delétage:
Conductive adhesive joint for extreme temperature applications. 1597-1601 - Anderson Pires Singulani, Hajdin Ceric, Siegfried Selberherr:
Stress evolution in the metal layers of TSVs with Bosch scallops. 1602-1605 - Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein:
Dynamic simulation of octahedron slotted metal structures. 1606-1610 - Nicola Delmonte, Francesco Giuliani, Paolo Cova:
Finite element modeling and characterization of lead-free solder joints fatigue life during power cycling of surface mounting power devices. 1611-1616 - Wissam Sabbah, Stephane Azzopardi, Cyril Buttay, Régis Meuret, Eric Woirgard:
Study of die attach technologies for high temperature power electronics: Silver sintering and gold-germanium alloy. 1617-1621
- Pierre-Louis Charvet, Pierre Nicolas, D. Bloch, B. Savornin:
MEMS packaging reliability assessment: Residual Gas Analysis of gaseous species trapped inside MEMS cavities. 1622-1627 - Mohamed Ayadi, Olivier Briat, Akram Eddahech, Ronan German, Gerard Coquery, Jean-Michel Vinassa:
Thermal cycling impacts on supercapacitor performances during calendar ageing. 1628-1631 - Jae-Seong Jeong:
Field failure mechanism and reproduction due to moisture for low-voltage ZnO varistors. 1632-1637 - Amrane Oukaour, Mathieu Pouliquen, Boubekeur Tala-Ighil, Hamid Gualous, Eric Pigeon, Olivier Gehan, Bertrand Boudart:
Supercapacitors aging diagnosis using least square algorithm. 1638-1642 - Ronan German, Olivier Briat, Ali Sari, Pascal Venet, Mohamed Ayadi, Younes Zitouni, Jean-Michel Vinassa:
Impact of high frequency current ripple on supercapacitors ageing through floating ageing tests. 1643-1647 - J. Keller, Raul Mrossko, H. Dobrinski, J. Stürmann, Ralf Döring, Rainer Dudek, Sven Rzepka, Bernd Michel:
Effect of moisture swelling on MEMS packaging and integrated sensors. 1648-1654 - Matroni Koutsoureli, Loukas Michalas, P. Martins, E. Papandreou, A. Leuliet, S. Bansropun, George J. Papaioannou, A. Ziaei:
Properties of contactless and contacted charging in MEMS capacitive switches. 1655-1658 - Nuria Torres Matabosch, Fabio Coccetti, Mehmet Kaynak, Beatrice Espana, Bernd Tillack, Jean-Louis Cazaux:
Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process. 1659-1662 - B. Wang, Jeroen De Coster, Martine Wevers, Ingrid De Wolf:
A novel method to measure the internal pressure of MEMS thin-film packages. 1663-1666 - Jun-Yong Tao, Xiao-Jing Wang, Bin Liu, Yan-Lei Wang, Zhi-Qian Ren, Xun Chen:
Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping. 1667-1671 - Yun-An Zhang, Jun-Yong Tao, Yan-Lei Wang, Zhi-Qian Ren, Bin Liu, Xun Chen:
The effect of water on the mechanical properties of native oxide coated silicon structure in MEMS. 1672-1675 - Marcantonio Catelani, Lorenzo Ciani, Mirko Marracci, Bernardo Tellini:
Analysis of ultracapacitors ageing in automotive application. 1676-1680
- Peter Dietrich:
Trends in automotive power semiconductor packaging. 1681-1686 - Uwe Scheuermann, R. Schmidt:
Impact of load pulse duration on power cycling lifetime of Al wire bonds. 1687-1691 - Akihiko Watanabe, Masanori Tsukuda, Ichiro Omura:
Real time degradation monitoring system for high power IGBT module under power cycling test. 1692-1696 - Amadou Sow, Sinivassane Somaya, Yves Ousten, Jean-Michel Vinassa, Fanny Patoureaux:
Power MOSFET active power cycling for medical system reliability assessment. 1697-1702 - Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy:
Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications. 1703-1706 - Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi:
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. 1707-1712 - Vincenzo d'Alessandro, Alessandro Magnani, Michele Riccio, Yohei Iwahashi, Giovanni Breglio, Niccolò Rinaldi, Andrea Irace:
Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations. 1713-1718 - F. Baccar, Stephane Azzopardi, L. Théolier, K. El Boubkari, Jean-Yves Delétage, Eric Woirgard:
Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach. 1719-1724 - Jeff Moussodji, Thierry Kociniewski, Zoubir Khatir:
Distributed electro-thermal model of IGBT chip - Application to top-metal ageing effects in short circuit conditions. 1725-1729 - Takuo Kikuchi, Mauro Ciappa:
A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs. 1730-1734 - D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene:
Robustness of 1.2 kV SiC MOSFET devices. 1735-1738 - Michele Riccio, Alberto Castellazzi, Giuseppe De Falco, Andrea Irace:
Experimental analysis of electro-thermal instability in SiC Power MOSFETs. 1739-1744 - Michael Nelhiebel, Robert Illing, Thomas Detzel, S. Wöhlert, B. Auer, S. Lanzerstorfer, M. Rogalli, W. Robl, Stefan Decker, J. Fugger, Markus Ladurner:
Effective and reliable heat management for power devices exposed to cyclic short overload pulses. 1745-1749 - Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel, Jean-Michel Reynes, Jean-Luc Massol, E. Pomes:
Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling. 1750-1754 - Tilo Poller, Salvatore D'Arco, Magnar Hernes, Atle Rygg Årdal, Josef Lutz:
Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs. 1755-1759 - Paolo Cova, Nicola Delmonte, Francesco Giuliani, Mauro Citterio, Stefano Latorre, Massimo Lazzaroni, Agostino Lanza:
Thermal optimization of water heat sink for power converters with tight thermal constraints. 1760-1765 - Koji Sasaki, Nobutada Ohno:
Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing. 1766-1770 - Li Yang, Alberto Castellazzi:
High temperature gate-bias and reverse-bias tests on SiC MOSFETs. 1771-1773 - Aaron Hutzler, Adam Tokarski, Andreas Schletz:
Extending the lifetime of power electronic assemblies by increased cooling temperatures. 1774-1777 - Masayuki Yoshimura, Atsushi Uchida, Satoshi Matsumoto:
Design issues of a thin-film p-channel SOI power MOSFET for high-temperature applications. 1778-1782 - Luca Maresca, Gianpaolo Romano, Giovanni Breglio, Andrea Irace:
Physically based analytical model of the blocking I-V curve of Trench IGBTs. 1783-1787 - Rui Wu, Frede Blaabjerg, Huai Wang, Marco Liserre:
Overview of catastrophic failures of freewheeling diodes in power electronic circuits. 1788-1792 - Mohamed Tlig, Jaleleddine Ben Hadj Slama, Mohamed Ali Belaïd:
Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests. 1793-1797
- Nicola Wrachien, Andrea Cester, Daniele Bari, Raffaella Capelli, Riccardo D'Alpaos, Michele Muccini, Andrea Stefani, Guido Turatti, Gaudenzio Meneghesso:
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric. 1798-1803 - Daniele Bari, Nicola Wrachien, R. Tagliaferro, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, Andrea Cester:
Comparison between positive and negative constant current stress on dye-sensitized solar cells. 1804-1808 - Alessandro Compagnin, Matteo Meneghini, Marco Barbato, Valentina Giliberto, Andrea Cester, Massimo Vanzi, Giovanna Mura, Enrico Zanoni, Gaudenzio Meneghesso:
Thermal and electrical investigation of the reverse bias degradation of silicon solar cells. 1809-1813 - Hyun Jun Jang, Seung Min Lee, Chong-Gun Yu, Jong Tae Park:
A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors. 1814-1817 - N. C. Park, J. S. Jeong, B. J. Kang, D. H. Kim:
The effect of encapsulant discoloration and delamination on the electrical characteristics of photovoltaic module. 1818-1822 - T. H. Kim, N. C. Park, D. H. Kim:
The effect of moisture on the degradation mechanism of multi-crystalline silicon photovoltaic module. 1823-1827
Volume 53, Number 12, December 2013
- Takuya Naoe, Tamao Ikeuchi, Chie Moritni, Hirohiko Endoh, Kohichi Yokoyama:
Local damage free Si substrate ultra thinning for backside emission spectral analysis using OBPF for LSI failure mode detection. 1829-1840 - Zahir Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey:
Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. 1841-1847 - Xueqian Zhong, Li Zhang, Gang Xie, Qing Guo, Tao Wang, Kuang Sheng:
High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure. 1848-1856 - R. Foissac, S. Blonkowski, M. Kogelschatz, P. Delcroix, M. Gros-Jean, F. Bassani:
Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy. 1857-1862 - Hei Wong, B. L. Yang, Shurong Dong:
Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique. 1863-1867 - Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe:
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. 1868-1874 - Dong-Suk Han, Jae-Hyung Park, Yu-Jin Kang, Jong-Wan Park:
Effects of zirconium doping on the characteristics of tin oxide thin film transistors. 1875-1878 - Runze Zhan, Chengyuan Dong, Po-Tsun Liu, Han-Ping D. Shieh:
Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors. 1879-1885 - Lingfeng Mao:
Quantum size impacts on the threshold voltage in nanocrystalline silicon thin film transistors. 1886-1890 - Jie Chen, Zhengwei Du:
Understanding and modeling of internal transient latch-up susceptibility in CMOS inverters due to microwave pulses. 1891-1896 - Hsien-Chin Chiu, Chao-Hung Chen, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang:
Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis. 1897-1900 - Murat Soylu, Omar A. Al-Hartomy, Said A. Farha Al Said, Ahmed A. Al-Ghamdi, I. S. Yahia, Fahrettin Yakuphanoglu:
Controlling of conduction mechanism and electronic parameters of silicon-metal junction by mixed Methylene Blue/2′-7′-dichlorofluorescein. 1901-1906 - D. A. van den Ende, Roel H. L. Kusters, Maarten Cauwe, A. van der Waal, Jeroen van den Brand:
Large area flexible lighting foils using distributed bare LED dies on polyester substrates. 1907-1915 - Han-Kuei Fu, Yi Ping Peng, Shang Pin Ying, Tzung-Te Chen, Chien-Ping Wang, Chiu-Ling Chen, Pei-Ting Chou:
The evaluation for the chromatic characteristics of LED module under electrical and thermal coupling analysis. 1916-1921 - Nochang Park, Changwoon Han, Donghwan Kim:
Effect of moisture condensation on long-term reliability of crystalline silicon photovoltaic modules. 1922-1926 - Hwen-Fen Hong, Tsung-Shiew Huang, Mei-Hui Chiang, Zun-Hao Shih:
Degradation mechanism of concentrator solar receivers without protection layer. 1927-1932 - Robert Skuriat, Jianfeng Li, Pearl A. Agyakwa, Nevil Mattey, Paul Evans, C. Mark Johnson:
Degradation of thermal interface materials for high-temperature power electronics applications. 1933-1942 - Nay Lin, Jianmin Miao, Pradeep Dixit:
Void formation over limiting current density and impurity analysis of TSV fabricated by constant-current pulse-reverse modulation. 1943-1953 - Tooraj Yousefi, Seyyed Arash Mousavi, B. Farahbakhsh, M. Z. Saghir:
Experimental investigation on the performance of CPU coolers: Effect of heat pipe inclination angle and the use of nanofluids. 1954-1961 - Zhiwei Li, Hua Li, Fuchang Lin, Yaohong Chen, De Liu, Bowen Wang, Haoyuan Li, Qin Zhang:
Lifetime investigation and prediction of metallized polypropylene film capacitors. 1962-1967 - Hongjin Jiang, Kyoung-sik Moon, C. P. Wong:
Recent advances of nanolead-free solder material for low processing temperature interconnect applications. 1968-1978 - Ted Sun, Ayhan A. Mutlu, Mahmudur Rahman:
A new statistical methodology predicting chip failure probability considering electromigration. 1979-1986 - Bladimir Ramos-Alvarado, David Brown, Xiuping Chen, Bo Feng, G. P. Peterson:
On the assessment of voids in the thermal interface material on the thermal performance of a silicon chip package. 1987-1995 - W. C. Leong, Mohd Zulkifly Abdullah, C. Y. Khor:
Optimization of flexible printed circuit board electronics in the flow environment using response surface methodology. 1996-2004 - Tomoya Daito, Hiroshi Nishikawa, Tadashi Takemoto, Takashi Matsunami:
Explanation of impact load curve in ball impact test in relation to thermal aging. 2005-2011 - Chin-Hung Kuo, Hsin-Hui Hua, Ho-Yang Chan, Tsung-Hsun Yang, Kuen-Song Lin, Cheng-En Ho:
Interfacial reaction and mechanical reliability of PTH solder joints with different solder/surface finish combinations. 2012-2017 - Tingbi Luo, Zhuo Chen, Anmin Hu, Ming Li, Peng Li:
Study on low-Ag content Sn-Ag-Zn/Cu solder joints. 2018-2029 - Guanghua Wu, Bo Tao, Zhouping Yin:
Study on the shear strength degradation of ACA joints induced by different hygrothermal aging conditions. 2030-2035 - Jeong-Won Yoon, Min-Kwan Ko, Bo-In Noh, Seung-Boo Jung:
Joint reliability evaluation of thermo-compression bonded FPCB/RPCB joints under high temperature storage test. 2036-2042 - Yusuf Cinar, Jinwoo Jang, Gunhee Jang, Seonsik Kim, Jaeseok Jang:
Effect of solder pads on the fatigue life of FBGA memory modules under harmonic excitation by using a global-local modeling technique. 2043-2051 - Nishad Patil, Diganta Das, Estelle Scanff, Michael G. Pecht:
Long term storage reliability of antifuse field programmable gate arrays. 2052-2056 - I-Chyn Wey, Yi-Jung Lan, Chien-Chang Peng:
Reliable ultra-low-voltage low-power probabilistic-based noise-tolerant latch design. 2057-2069 - Eduardas Bareisa, Vacius Jusas, Kestutis Motiejunas, Rimantas Seinauskas:
Delay fault testing using partial multiple scan chains. 2070-2077
- Vallayil N. A. Naikan:
Life Cycle Reliability Engineering, Guangbin Yang. John Wiley & Sons, Inc. (2007), p. 517. ISBN: 978-0-471-71529-0. 2078 - Vojkan Davidovic:
Nanoelectronic Devices, B.-G. Park, S.W. Hwang, Y.J. Park. Pan Stanford Publishing Pte. Ltd., Singapore (2012). 406 p., ISBN: 978-981-4364-00-3. 2079
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