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ORCIDMicroelectronics Reliability, Volume 54
Volume 54, Number 1, January 2014
- F. Medjdoub:
Ultrathin barrier GaN-on-Silicon devices for millimeter wave applications. 1-12
- Soufyane Belhenini
, Abdellah Tougui, Abdelhake Bouchou, Franck Dosseul:
3D finite element modeling of 3D C2W (chip to wafer) drop test reliability: Optimization of internal architecture and materials. 13-21
- Filippo Alagi:
A study of the interface-trap activation kinetics in the Negative Bias Temperature Instability. 22-29 - Meng Zhang, Wei Zhou, Rongsheng Chen, Man Wong, Hoi-Sing Kwok:
Water-enhanced negative bias temperature instability in p-type low temperature polycrystalline silicon thin film transistors. 30-32 - Ivan A. Starkov, Alexander S. Starkov:
Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress. 33-36 - Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta:
Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity. 37-43 - Mehdi Saeidmanesh, Meisam Rahmani, H. Karimi Feiz Karimi, M. Khaledian, Razali Ismail:
Analytical model for threshold voltage of double gate bilayer graphene field effect transistors. 44-48 - Josef Lutz, Roman Baburske:
Some aspects on ruggedness of SiC power devices. 49-56 - Qiang Cui, Srivatsan Parthasarathy, Javier A. Salcedo, Juin J. Liou, Jean-Jacques Hajjar, Yuanzhong Paul Zhou:
Design optimization of SiGe BiCMOS Silicon Controlled Rectifier for Charged Device Model (CDM) protection applications. 57-63 - Po-Yen Chiu, Ming-Dou Ker:
Metal-layer capacitors in the 65 nm CMOS process and the application for low-leakage power-rail ESD clamp circuit. 64-70 - Ming-Dou Ker, Wan-Yen Lin, Cheng-Cheng Yen:
SCR-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance. 71-78 - Vladimir Dj. Vukic, Predrag Osmokrovic:
Failure of the negative voltage regulator in medium-photon-energy X radiation fields. 79-89 - Vijay Kumar Sharma, Manisha Pattanaik, Balwinder Raj:
PVT variations aware low leakage INDEP approach for nanoscale CMOS circuits. 90-99 - Brijesh Kumar, Brajesh Kumar Kaushik, Yuvraj Singh Negi, Vidhi Goswami:
Single and dual gate OTFT based robust organic digital design. 100-109 - Cecilia Gimeno, Erick Guerrero, Santiago Celma, Concepción Aldea:
Reliable CMOS adaptive equalizer for short-haul optical networks. 110-118 - Xiaoli Ji, Chun-bo Wu, Yue Xu, Yi-ming Liao, Jianguang Chang, Li-juang Ma, Feng Yan:
The promising multi-bit/level programming operations for nano-scaled SONOS memory. 119-123 - Yuanyuan Chen, Bin Sun, Tianhe Ma, Xiaohan Sun:
Thermal management for high-power photonic crystal light emitting diodes. 124-130 - Dae-Suk Kim, Bongtae Han, Youn-Jea Kim:
Degradation analysis of secondary lens system and its effect on performance of LED-based luminaire. 131-137 - M. Yazdan Mehr, W. D. van Driel, Kaspar M. B. Jansen, P. Deeben, G. Q. Zhang:
Lifetime assessment of Bisphenol-A Polycarbonate (BPA-PC) plastic lens, used in LED-based products. 138-142 - Kamal Medjaher, Haithem Skima, Noureddine Zerhouni:
Condition assessment and fault prognostics of microelectromechanical systems. 143-151 - Y. Q. Zhu, H. Qian, L. F. Wang, Lei Wang, J. Y. Tang:
Measurement and analysis of substrate leakage current of RF mems capacitive switches. 152-159 - Chaonan Wang, Liudong Xing, Vinod Vokkarane, Yan Lindsay Sun:
Reliability and lifetime modeling of wireless sensor nodes. 160-166 - J. S. Yuan, S. Chen:
Power amplifier resilient design for process and temperature variations using an on-chip PLL sensing signal. 167-171 - Mahera Musallam, Chunyan Yin, Chris Bailey, C. Mark Johnson:
Application of coupled electro-thermal and physics-of-failure-based analysis to the design of accelerated life tests for power modules. 172-181 - Raffaele Fucci, Laura Lancellotti, Carlo Privato:
A procedure for assessing the reliability of short circuited concentration photovoltaic systems in outdoor degradation conditions. 182-187 - Hong Yang, He Wang, Chuanke Chen, Dingyue Cao, Huacong Yu:
Effect of binding force between silver paste and silicon on power degradation of crystalline silicon solar module. 188-191 - Lech Z. Hasse, Sylwia Babicz, Leszek Kaczmarek, Janusz M. Smulko, Vlasta Sedlakova:
Quality assessment of ZnO-based varistors by 1/f noise. 192-199 - Z. Pruszowski, M. Ciez:
The influence of electroless metallization process parameters on basic electric properties of Ni-P alloy. 200-203 - Abdellah Salahouelhadj, Marion Martiny, Sebastien Mercier, Laurent Bodin, David Manteigas, B. Stephan:
Reliability of thermally stressed rigid-flex printed circuit boards for High Density Interconnect applications. 204-213 - Elviz George, Michael G. Pecht:
Tin whisker analysis of an automotive engine control unit. 214-219 - Pedro Quintero, F. Patrick McCluskey, B. Koene:
Thermomechanical reliability of a silver nano-colloid die attach for high temperature applications. 220-225 - Fang Liu, Guang Meng:
Random vibration reliability of BGA lead-free solder joint. 226-232 - Yee-Wen Yen, Ruo-Syun Syu, Chih-Ming Chen, Chien-Chung Jao, Guan-Da Chen:
Interfacial reactions of Sn-58Bi and Sn-0.7Cu lead-free solders with Alloy 42 substrate. 233-238 - Mathias Ekpu, Raj S. Bhatti, Michael I. Okereke, Sabuj Mallik, Kenny C. Otiaba:
Fatigue life of lead-free solder thermal interface materials at varying bond line thickness in microelectronics. 239-244 - Jiaxing Liang, Tingbi Luo, Anmin Hu, Ming Li:
Formation and growth of interfacial intermetallic layers of Sn-8Zn-3Bi-0.3Cr on Cu, Ni and Ni-W substrates. 245-251 - Jun Shen, Zhongming Cao, Dajun Zhai, Mali Zhao, Peipei He:
Effect of isothermal aging and low density current on intermetallic compound growth rate in lead-free solder interface. 252-258 - Lijuan Liu, Ping Wu, Wei Zhou:
Effects of Cu on the interfacial reactions between Sn-8Zn-3Bi-xCu solders and Cu substrate. 259-264 - Myong-Hoon Roh, Jae Pil Jung, Won Joong Kim:
Microstructure, shear strength, and nanoindentation property of electroplated Sn-Bi micro-bumps. 265-271 - Jussi Putaala, Jari Hannu, Esa Kunnari, Matti Mäntysalo, Olli Nousiainen, Heli Jantunen:
Reliability of SMD interconnections on flexible low-temperature substrates with inkjet-printed conductors. 272-280 - Liang Zhang, Ji-guang Han, Yong-huan Guo, Cheng-wen He:
Anand model and FEM analysis of SnAgCuZn lead-free solder joints in wafer level chip scale packaging devices. 281-286 - Jun-Hsien Yeh, Tsung-Nan Tsai:
Optimizing the fine-pitch copper wire bonding process with multiple quality characteristics using a grey-fuzzy Taguchi method. 287-296 - Mohamed H. A. Elnaggar:
Numerical investigation of characteristics of wick structure and working fluid of U-shape heat pipe for CPU cooling. 297-302 - Mirko R. Kosanovic, Mile K. Stojcev:
RPATS - Reliable power aware time synchronization protocol. 303-315 - Aiman H. El-Maleh, Feras Chikh Oughali:
A generalized modular redundancy scheme for enhancing fault tolerance of combinational circuits. 316-326
- Hans de Vries, Kunigunde Cherenack:
Endurance behavior of conductive yarns. 327-330 - Yue Xu, Chun-bo Wu, Xiaoli Ji, Feng Yan:
An 8-level 3-bit cell programming technique in NOR-type nano-scaled SONOS memory devices. 331-334 - Zhen Gao, Pedro Reviriego, X. Li, Juan Antonio Maestro, Ming Zhao, J. Wang:
A fault tolerant implementation of the Goertzel algorithm. 335-337 - Pedro Reviriego, Salvatore Pontarelli, Juan Antonio Maestro, Marco Ottavi:
Efficient implementation of error correction codes in hash tables. 338-340
Volume 54, Number 2, February 2014
- Peter Ersland, Roberto Menozzi:
Editorial. 341 - Leslie Marchut, Michael G. Meeder, Terrence Stark:
Process reliability screening in situ. 342-348 - Dario Nappa, Gergana I. Drandova:
Estimating activation energies for multi-mode failures. 349-353 - Charles S. Whitman:
Methodology for predicting off-state reliability in GaN power transistors. 354-359 - William J. Roesch, Philip Rains:
Separating HBT wearout from defects during early life operation. 360-365
- Luc Saury:
Parametric defect localization on integrated circuits - From static laser stimulation to real-time variation mapping (RTVM). 366-373
- Jifa Hao, Mark Rioux, Samia A. Suliman, Osama O. Awadelkarim:
High temperature bias-stress-induced instability in power trench-gated MOSFETs. 374-380 - Elena Atanassova, Nenad Novkovski, D. Spassov, Albena Paskaleva, Aleksandar Skeparovski:
Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack. 381-387 - Cong Ye, Chao Zhan, Jieqiong Zhang, Hao Wang, Tengfei Deng, Shiruo Tang:
Influence of rapid thermal annealing temperature on structure and electrical properties of high permittivity HfTiO thin film used in MOSFET. 388-392 - J. X. Chen, Jing-Ping Xu, Lu Liu, X. D. Huang, Pui To Lai:
Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory. 393-396 - Engin Afacan, Günhan Dündar, I. Faik Baskaya:
Reliability assessment of CMOS differential cross-coupled LC oscillators and a novel on chip self-healing approach against aging phenomena. 397-403 - Lingfeng Mao:
Quantum coupling effects on charging dynamics of nanocrystalline memory devices. 404-409 - Jeong-Won Yoon, Bo-In Noh, Seung-Boo Jung:
Electrical properties and electrochemical migration characteristics of directly printed Ag patterns with various sintering conditions. 410-416 - Lutz Merkle, Marcus Sonner, Matthias Petzold:
Lifetime prediction of thick aluminium wire bonds for mechanical cyclic loads. 417-424 - He Ma, Daquan Yu, Jun Wang:
The development of effective model for thermal conduction analysis for 2.5D packaging using TSV interposer. 425-434 - Chaoran Yang, Fubin Song, S. W. Ricky Lee:
Impact of Ni concentration on the intermetallic compound formation and brittle fracture strength of Sn-Cu-Ni (SCN) lead-free solder joints. 435-446 - Ahmad Mayyas, Awni Qasaimeh, Peter Borgesen, Michael Meilunas:
Effects of latent damage of recrystallization on lead free solder joints. 447-456 - Olivér Krammer:
Modelling the self-alignment of passive chip components during reflow soldering. 457-463 - Michael Merrett, Mark Zwolinski:
Monte Carlo Static Timing Analysis with statistical sampling. 464-474 - Mehdi Habibi, Hossein Pourmeidani:
A hierarchical defect repair approach for hybrid nano/CMOS memory reliability enhancement. 475-484
- Wen-Teng Chang, Chun-Ming Lai, Wen-Kuan Yeh:
Reliability of the doping concentration in an ultra-thin body and buried oxide silicon on insulator (SOI) and comparison with a partially depleted SOI. 485-489
- Chong Leong Gan, Classe Francis, Bak Lee Chan, Uda Hashim:
Copper Wire Bonding, Preeti S., Chauhan, Anupam Choubey, ZhaoWei Zhong, Michael G. Pecht, Springer (2014). XXVI, pp 235, ISBN: 978-1-4614-5760-2 (Print), 978-1-4614-5761-9 (Online). 490
Volume 54, Number 3, March 2014
- Nilesh Goel, Kaustubh Joshi, S. Mukhopadhyay, N. Nanaware, Souvik Mahapatra:
A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs. 491-519 - Yoshiki Yonamoto:
Recovery behavior in negative bias temperature instability. 520-528 - Fen Chen, Michael A. Shinosky:
Electron fluence driven, Cu catalyzed, interface breakdown mechanism for BEOL low-k time dependent dielectric breakdown. 529-540
- Debanjan Acharyya, Arnab Hazra, Partha Bhattacharyya:
A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review. 541-560
- Filippo Alagi, Mattia Rossetti, Roberto Stella, Emanuele Viganò:
A reversible first-order dispersive model of parametric instability. 561-569 - Aditya Kalavagunta, Shubhajit Mukherjee, Robert A. Reed, Ronald D. Schrimpf:
Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs. 570-574 - R. Zhang, Wen-Sheng Zhao, W. Y. Yin:
Investigation on thermo-mechanical responses in high power multi-finger AlGaN/GaN HEMTs. 575-581 - Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen:
A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate. 582-586 - Myeongjin Kim, Myeongyeol Yoo, Youngjae Yoo, Jooheon Kim:
Capacitance behavior of composites for supercapacitor applications prepared with different durations of graphene/nanoneedle MnO2 reduction. 587-594 - Jie Jin, Chunhua Wang, Jingru Sun, Yuxiang Tu, Lv Zhao, Zanming Xia:
Novel digitally programmable multiphase voltage controlled oscillator and its stability discussion. 595-600 - Toni T. Mattila, Laura Vajavaara, Jussi Hokka, Esa Hussa, Manu Mäkelä, Ville Halkola:
Evaluation of the drop response of handheld electronic products. 601-609 - Koustav Sinha, Joe Varghese, Abhijit Dasgupta:
Effect of geometric complexities and nonlinear material properties on interfacial crack behavior in electronic devices. 610-618 - Jie Zhang, Tian Li, Huiping Wang, Yi Liu, Yingfeng Yu:
Monitoring extent of curing and thermal-mechanical property study of printed circuit board substrates. 619-628 - Hsi-Kuei Cheng, Shien-Ping Feng, Yi-Jen Lai, Kuo-Chio Liu, Ying-Lang Wang, Tzeng-Feng Liu, Chih-Ming Chen:
Effect of polyimide baking on bump resistance in flip-chip solder joints. 629-632 - Xi-Shu Wang, Su Jia, Huai-Hui Ren, Pan Pan:
Effects of solder balls and arrays on the failure behavior in Package-on-Package structure. 633-640 - Jong-Keun Park, Yong-Jun Oh:
Interfacial microstructures and glass strengthening in anodic-bonded Al sheet/glass and sputtered Al film/glass. 641-647 - Yansong Tan, Xin Li, Xu Chen:
Fatigue and dwell-fatigue behavior of nano-silver sintered lap-shear joint at elevated temperature. 648-653 - Aiman H. El-Maleh, Ayed S. Al-Qahtani:
A finite state machine based fault tolerance technique for sequential circuits. 654-661
- Mahdiar Hosein Ghadiry, Mahdieh Nadi Senejani, M. Bahadoran, Asrulnizam Bin Abd Manaf, H. Karimi, Hatef Sadeghi:
Corrigendum to "An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors" [Microelectron. Reliability 53 (4) (2013) 540-543]. 662
Volume 54, Number 4, April 2014
- Diing Shenp Ang, Chenjie Gu, Z. Y. Tung, A. A. Boo, Yuan Gao:
Evolution of oxide charge trapping under bias temperature stressing. 663-681 - Louis Gerrer, Jie Ding, Salvatore M. Amoroso, Fikru Adamu-Lema, Razaidi Hussin, Dave Reid, Campbell Millar, A. Asenov:
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review. 682-697 - Ming-Long Fan, Shao-Yu Yang, Vita Pi-Ho Hu, Yin-Nien Chen, Pin Su, Ching-Te Chuang:
Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits. 698-711 - Baozhen Li, Cathryn Christiansen, Dinesh Badami, Chih-Chao Yang:
Electromigration challenges for advanced on-chip Cu interconnects. 712-724
- Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. 725-729 - Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi:
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation. 730-737 - Antonio Calomarde, Esteve Amat, Francesc Moll, Julio Vigara, Antonio Rubio:
SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET. 738-745 - Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken:
Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. 746-754 - Jiangtao Xu, Dongsheng Li, Lu Yu, Suying Yao:
A time error model for time-based PWM pixel with correlated double sample in the circumstance of nonlinear response. 755-763 - Vincent Fiori, Komi-Atchou Ewuame, Sébastien Gallois-Garreignot, Hervé Jaouen, Clément Tavernier:
Numerical analysis of thermo-mechanical and mobility effects for 28 nm node and beyond: Comparison and design consequences over bumping technologies. 764-772 - Chunsheng Zhu, Wenguo Ning, Heng Li, Tao Zheng, Gaowei Xu, Le Luo:
Void control during plating process and thermal annealing of through-mask electroplated copper interconnects. 773-777 - Wei-Chih Chiu, Bing-Yue Tsui:
High performance of CNT-interconnects by the multi-layer structure. 778-784 - Toni T. Mattila, Heikki Ruotoistenmäki, Jani Raami, Jussi Hokka, Manu Mäkelä, Esa Hussa, Markku Sillanpää, Ville Halkola:
An approach to adjust the board-level drop test conditions to improve the correlation with product-level drop impact. 785-795 - C. Y. Khor, Mohd Zulkifly Abdullah, Chun-Sean Lau, W. C. Leong, M. S. Abdul Aziz:
Influence of solder bump arrangements on molded IC encapsulation. 796-807 - Zhensong Xu, Tielin Shi, Xiangning Lu, Guanglan Liao:
Using active thermography for defects inspection of flip chip. 808-815 - Hong Gao, Jian-hua Ma, Li-Lan Gao, Dong Zhang:
Fatigue and resistance analysis of COG modules using electro-mechanical coupling method. 816-824 - Lei Jia, Xinjun Sheng, Zhenhua Xiong, Zhiping Wang, Han Ding:
Particle on Bump (POB) technique for ultra-fine pitch chip on glass (COG) applications by conductive particles and adhesives. 825-832 - Sanwi Kim, Taek-Soo Kim:
Adhesion improvement of silicon/underfill/polyimide interfaces by UV/ozone treatment and sol-gel derived hybrid layers. 833-839
- Johanna Virkki, Toni Björninen, T. Kellomäki, Sari Merilampi, I. Shafiq, Leena Ukkonen, Lauri Sydänheimo, Y. C. Chan:
Reliability of washable wearable screen printed UHF RFID tags. 840-846
Volume 54, Number 5, May 2014
- Nagarajan Raghavan, Kin Leong Pey, Kalya Shubhakar:
High-κ dielectric breakdown in nanoscale logic devices - Scientific insight and technology impact. 847-860 - Suman Datta, Huichu Liu, Vijaykrishnan Narayanan:
Tunnel FET technology: A reliability perspective. 861-874 - Shuji Tanaka:
Wafer-level hermetic MEMS packaging by anodic bonding and its reliability issues. 875-881
- Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil:
Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique. 882-888 - Yoshiki Yonamoto:
Recovery and universality in NBTI. 889-892 - C. Meneses, J. G. Sánchez, Magali Estrada, Antonio Cerdeira, Josep Pallarès, Benjamín Iñíguez,