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ORCIDMicroelectronics Reliability, Volume 59
Volume 59, April 2016
- Ee-Hua Wong
, W. D. van Driel, Abhijit Dasgupta, Michael G. Pecht:
Creep fatigue models of solder joints: A critical review. 1-12 - Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang:
Degradation of pMOSFETs due to hot electron induced punchthrough. 13-17 - Evgeny Pikhay, Yakov Roizin, Yael Nemirovsky:
Degradation study of single poly radiation sensors by monitoring charge trapping. 18-25 - Nebojsa D. Jankovic, Chadwin D. Young:
Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs. 26-29 - Ping Wang, Yiqi Zhuang, Cong Li, Zhi Jiang, Yuqi Liu:
Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket. 30-36 - Chang Bum Park, HyungIl Na, Soon Sung Yoo, Kwon-Shik Park:
Electrical characteristics of a-IGZO transistors along the in-plane axis during outward bending. 37-43 - Hsien-Chin Chiu, Ji-Fan Chi, Hsuan-Ling Kao, Chia-Yi Chu, Kuan-Liang Cho, Feng-Tso Chien:
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment. 44-48 - Jianping Zhang, Wenlong Chen, Chen Wang, Xiao Chen, Guoliang Cheng, Yingji Qiu, Helen Wu:
An improved modeling for life prediction of high-power white LED based on Weibull right approximation method. 49-54 - Jian Guan, Shuxu Guo, Jin-Yuan Wang, Min Tao, Junsheng Cao, Fengli Gao:
Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current. 55-59 - Ákos Nemcsics, Bálint Podör, Lajos Tóth, János Balázs, László Dobos, János Makai, Márton Csutorás, Antal Ürmös:
Investigation of MBE grown inverted GaAs quantum dots. 60-63 - Chang-Woo Han, Seung-Boong Jeong, Myung-Do Oh:
Thermo-fluid simulation for the thermal design of the IGBT module in the power conversion system. 64-72 - Mohd. Amir Eleffendi, Li Yang, Pearl A. Agyakwa, C. Mark Johnson:
Quantification of cracked area in thermal path of high-power multi-chip modules using transient thermal impedance measurement. 73-83 - Hsien-Chie Cheng, Tzu-Chin Huang, Po-Wen Hwang, Wen-Hwa Chen:
Heat dissipation assessment of through silicon via (TSV)-based 3D IC packaging for CMOS image sensing. 84-94 - Wei Feng, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi:
Validation of TSV thermo-mechanical simulation by stress measurement. 95-101 - Houman Zahedmanesh, Mario Gonzalez, Ivan Ciofi, Kristof Croes, Jürgen Bömmels, Zsolt Tökei:
Design considerations for the mechanical integrity of airgaps in nano-interconnects under chip-package interaction; a numerical investigation. 102-107 - Aidan Cowley, Andrej Ivankovic, C. S. Wong, N. S. Bennett, A. N. Danilewsky, Marcel Gonzalez, Vladimir Cherman, Bart Vandevelde, Ingrid De Wolf, Patrick J. McNally:
B-Spline X-Ray Diffraction Imaging - Rapid non-destructive measurement of die warpage in ball grid array packages. 108-116 - M. T. Zarmai, Ndy N. Ekere, C. F. Oduoza, Emeka H. Amalu:
Optimization of thermo-mechanical reliability of solder joints in crystalline silicon solar cell assembly. 117-125 - Elaheh Arjmand, Pearl A. Agyakwa, Martin R. Corfield, Jianfeng Li, Bassem Mouawad, C. Mark Johnson:
A thermal cycling reliability study of ultrasonically bonded copper wires. 126-133 - Masaki Ohyama, Masatsugu Nimura, Jun Mizuno, Shuichi Shoji, Toshihisa Nonaka, Yoichi Shinba, Akitsu Shigetou:
Evaluation of hybrid bonding technology of single-micron pitch with planar structure for 3D interconnection. 134-139
- Chong Leong Gan:
Book Review: Fundamentals of Bias Temperature Instability in MOS Transistors. Springer (2016). 140
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