BibTeX records: Yongsik Yim

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@inproceedings{DBLP:conf/isscc/LeeLPPYKLKLKCCY16,
  author       = {Seungjae Lee and
                  Jin{-}Yub Lee and
                  Il{-}Han Park and
                  Jong{-}Yeol Park and
                  Sung{-}Won Yun and
                  Minsu Kim and
                  Jong{-}Hoon Lee and
                  Min{-}Seok Kim and
                  Kangbin Lee and
                  Taeeun Kim and
                  Byungkyu Cho and
                  Dooho Cho and
                  Sangbum Yun and
                  Jung{-}No Im and
                  Hyejin Yim and
                  Kyung{-}Hwa Kang and
                  Suchang Jeon and
                  Sungkyu Jo and
                  Yang{-}Lo Ahn and
                  Sung{-}Min Joe and
                  Suyong Kim and
                  Deok{-}kyun Woo and
                  Jiyoon Park and
                  Hyun Wook Park and
                  Youngmin Kim and
                  Jonghoon Park and
                  Yongsu Choi and
                  Makoto Hirano and
                  Jeong{-}Don Ihm and
                  Byunghoon Jeong and
                  Seon{-}Kyoo Lee and
                  Moosung Kim and
                  Hokil Lee and
                  Sungwhan Seo and
                  Hongsoo Jeon and
                  Chan{-}ho Kim and
                  Hyunggon Kim and
                  Jintae Kim and
                  Yongsik Yim and
                  Hoosung Kim and
                  Dae{-}Seok Byeon and
                  Hyang{-}Ja Yang and
                  Ki{-}Tae Park and
                  Kyehyun Kyung and
                  Jeong{-}Hyuk Choi},
  title        = {7.5 {A} 128Gb 2b/cell {NAND} flash memory in 14nm technology with
                  tPROG=640{\(\mathrm{\mu}\)}s and 800MB/s {I/O} rate},
  booktitle    = {2016 {IEEE} International Solid-State Circuits Conference, {ISSCC}
                  2016, San Francisco, CA, USA, January 31 - February 4, 2016},
  pages        = {138--139},
  publisher    = {{IEEE}},
  year         = {2016},
  url          = {https://doi.org/10.1109/ISSCC.2016.7417945},
  doi          = {10.1109/ISSCC.2016.7417945},
  timestamp    = {Wed, 04 Oct 2023 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/LeeLPPYKLKLKCCY16.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

@article{DBLP:journals/jssc/KimRLKLJSJKLLKCYCJPHSKLJ12,
  author       = {Chulbum Kim and
                  Jinho Ryu and
                  Tae{-}Sung Lee and
                  Hyunggon Kim and
                  Jaewoo Lim and
                  Jaeyong Jeong and
                  Seonghwan Seo and
                  Hongsoo Jeon and
                  Bokeun Kim and
                  Inyoul Lee and
                  Dooseop Lee and
                  Pansuk Kwak and
                  Seongsoon Cho and
                  Yongsik Yim and
                  Changhyun Cho and
                  Woopyo Jeong and
                  Kwang{-}Il Park and
                  Jin{-}Man Han and
                  Duheon Song and
                  Kyehyun Kyung and
                  Youngho Lim and
                  Young{-}Hyun Jun},
  title        = {A 21 nm High Performance 64 Gb {MLC} {NAND} Flash Memory With 400
                  MB/s Asynchronous Toggle {DDR} Interface},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {47},
  number       = {4},
  pages        = {981--989},
  year         = {2012},
  url          = {https://doi.org/10.1109/JSSC.2012.2185341},
  doi          = {10.1109/JSSC.2012.2185341},
  timestamp    = {Sun, 30 Aug 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/KimRLKLJSJKLLKCYCJPHSKLJ12.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}