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Ken Takeuchi
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Publications
- 2014
- [j32]Koh Johguchi, Toru Egami, Kousuke Miyaji, Ken Takeuchi:
A Temperature Tracking Read Reference Current and Write Voltage Generator for Multi-Level Phase Change Memories. IEICE Trans. Electron. 97-C(4): 342-350 (2014) - [j30]Chao Sun, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi:
A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(2): 382-392 (2014) - 2013
- [j27]Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, Ken Takeuchi:
A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy. IEEE J. Solid State Circuits 48(9): 2239-2249 (2013) - [c21]Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Ken Takeuchi:
Over 10-times high-speed, energy efficient 3D TSV-integrated hybrid ReRAM/MLC NAND SSD by intelligent data fragmentation suppression. ASP-DAC 2013: 81-82 - 2012
- [j24]Kousuke Miyaji, Kentaro Honda, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi:
Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor. IEICE Trans. Electron. 95-C(4): 564-571 (2012) - [j23]Kousuke Miyaji, Ryoji Yajima, Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi:
Initialize and Weak-Program Erasing Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive. IEICE Trans. Electron. 95-C(4): 609-616 (2012) - [j19]Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi:
Near Threshold Voltage Word-Line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 59-I(8): 1635-1643 (2012) - [c17]Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, Ken Takeuchi:
A 6T SRAM with a carrier-injection scheme to pinpoint and repair fails that achieves 57% faster read and 31% lower read energy. ISSCC 2012: 232-234 - [c14]Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Chao Sun, Ken Takeuchi:
x11 performance increase, x6.9 endurance enhancement, 93% energy reduction of 3D TSV-integrated hybrid ReRAM/MLC NAND SSDs by data fragmentation suppression. VLSIC 2012: 134-135 - 2011
- [j16]Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Shinji Miyano, Ken Takeuchi:
Improvement of Read Margin and Its Distribution by VTH Mismatch Self-Repair in 6T-SRAM With Asymmetric Pass Gate Transistor Formed by Post-Process Local Electron Injection. IEEE J. Solid State Circuits 46(9): 2180-2188 (2011) - [c12]Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi:
Statistical VTH shift variation self-convergence scheme using near threshold VWL injection for local electron injected asymmetric pass gate transistor SRAM. CICC 2011: 1-4 - 2010
- [c8]Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi:
Elimination of half select disturb in 8T-SRAM by local injected electron asymmetric pass gate transistor. CICC 2010: 1-4
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