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Guangyu Sun 0003
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Publications
- 2020
- [c87]Qilin Zheng, Xingchen Li, Zongwei Wang, Guangyu Sun, Yimao Cai, Ru Huang, Yiran Chen, Hai Li:
MobiLattice: A Depth-wise DCNN Accelerator with Hybrid Digital/Analog Nonvolatile Processing-In-Memory Block. ICCAD 2020: 104:1-104:9 - 2019
- [j17]Shuo Li, Nong Xiao, Peng Wang, Guangyu Sun, Xiaoyang Wang, Yiran Chen, Hai Helen Li, Jason Cong, Tao Zhang:
RC-NVM: Dual-Addressing Non-Volatile Memory Architecture Supporting Both Row and Column Memory Accesses. IEEE Trans. Computers 68(2): 239-254 (2019) - 2018
- [c78]Peng Wang, Shuo Li, Guangyu Sun, Xiaoyang Wang, Yiran Chen, Hai Li, Jason Cong, Nong Xiao, Tao Zhang:
RC-NVM: Enabling Symmetric Row and Column Memory Accesses for In-memory Databases. HPCA 2018: 518-530 - 2016
- [c66]Xian Zhang, Guangyu Sun, Yaojun Zhang, Yiran Chen, Hai Li, Wujie Wen, Jia Di:
A novel PUF based on cell error rate distribution of STT-RAM. ASP-DAC 2016: 342-347 - [c63]Chaofei Yang, Beiye Liu, Yandan Wang, Yiran Chen, Hai Li, Xian Zhang, Guangyu Sun:
The Applications of NVM Technology in Hardware Security. ACM Great Lakes Symposium on VLSI 2016: 311-316 - 2015
- [c55]Chao Zhang, Guangyu Sun, Weiqi Zhang, Fan Mi, Hai Li, Weisheng Zhao:
Quantitative modeling of racetrack memory, a tradeoff among area, performance, and power. ASP-DAC 2015: 100-105 - 2011
- [c17]Chun Jason Xue, Youtao Zhang, Yiran Chen, Guangyu Sun, Jianhua Joshua Yang, Hai Li:
Emerging non-volatile memories: opportunities and challenges. CODES+ISSS 2011: 325-334 - 2010
- [j1]Yiran Chen, Hai Li, Cheng-Kok Koh, Guangyu Sun, Jing Li, Yuan Xie, Kaushik Roy:
Variable-Latency Adder (VL-Adder) Designs for Low Power and NBTI Tolerance. IEEE Trans. Very Large Scale Integr. Syst. 18(11): 1621-1624 (2010) - [c9]Guangyu Sun, Yongsoo Joo, Yibo Chen, Dimin Niu, Yuan Xie, Yiran Chen, Hai Li:
A Hybrid solid-state storage architecture for the performance, energy consumption, and lifetime improvement. HPCA 2010: 1-12 - 2008
- [c3]Xiangyu Dong, Xiaoxia Wu, Guangyu Sun, Yuan Xie, Hai Li, Yiran Chen:
Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement. DAC 2008: 554-559
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