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Florian Cacho
- > Home > Persons > Florian Cacho
Publications
- 2023
- [c38]Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix:
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. IRPS 2023: 1-8 - [c37]Joycelyn Hai, Florian Cacho, X. Federspiel, Tidjani Garba-Seybou, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould:
Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation. IRPS 2023: 1-6 - 2022
- [c35]Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho:
New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. IRPS 2022: 11 - [c34]M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo:
Frequency dependant gate oxide TDDB model. IRPS 2022: 25-1 - 2021
- [c32]Florian Cacho, Lorena Anghel, Xavier Federspiel:
Monitoring Setup and Hold Timing Limits. IRPS 2021: 1-6 - [c31]Xavier Federspiel, Abdourahmane Camara, Audrey Michard, Cheikh Diouf, Florian Cacho:
HCI Temperature sense effect from 180nm to 28nm nodes. IRPS 2021: 1-5 - [c30]Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho:
Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling. IRPS 2021: 1-5 - [c29]Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent:
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS 2021: 1-5 - 2020
- [c28]Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho:
Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. IRPS 2020: 1-8 - [c27]Xavier Federspiel, Cheikh Diouf, Florian Cacho, Emmanuel Vincent:
Comparison of variability of HCI induced drift for SiON and HKMG devices. IRPS 2020: 1-5 - 2019
- [c26]Audrey Michard, Florian Cacho, Damien Celeste, Xavier Federspiel:
Global and Local Process Variation Simulations in Design for Reliability approach. IOLTS 2019: 72-75 - [c25]Florian Cacho, X. Federspiel, D. Nouguier, Cheikh Diouf:
Investigation of NBTI Dynamic Behavior with Ultra-Fast Measurement. IRPS 2019: 1-6 - [c24]A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard:
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS 2019: 1-5 - 2018
- [c22]Florian Cacho, D. Nouguier, M. Arabi, X. Federspiel, Y. Carminati, M. Saliva:
Integrated Test Structures for Reliability Investigation under Dynamic Stimuli. IOLTS 2018: 1-5 - 2017
- [j6]R. Lajmi, Florian Cacho, Estelle Lauga-Larroze, Sylvain Bourdel, Ph. Benech, Vincent Huard, X. Federspiel:
Characterization of Low Drop-Out during ageing and design for yield. Microelectron. Reliab. 76-77: 92-96 (2017) - 2016
- [j5]Cheikh Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix:
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. Microelectron. Reliab. 64: 158-162 (2016) - [j4]Alain Bravaix, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Vincent Huard:
Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. Microelectron. Reliab. 64: 163-167 (2016) - [c11]Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard:
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. IOLTS 2016: 43-46 - 2015
- [c5]M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel:
Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. DATE 2015: 441-446 - [c2]P. Mora, X. Federspiel, Florian Cacho, Vincent Huard, Wafa Arfaoui:
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation. IRPS 2015: 6
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