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Raymond S. Winton

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1990 – 1999

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1998
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Raymond S. Winton, William R. Bandy:
A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 17(7): 631-638 (1998)
1996
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William R. Bandy, Raymond S. Winton:
A new approach for modeling the MOSFET using a simple, continuous analytical expression for drain conductance which includes velocity-saturation in a fundamental way. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 15(5): 475-483 (1996)

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