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2020 – today
- 2024
[c38]Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS 2024: 1-9- 2023
- [c37]Rana ElKashlan, Hao Yu, Ahmad Khaled, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert
, Piet Wambacq, Bertrand Parvais:
A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. ESSDERC 2023: 152-155 - 2022
- [c36]Steven Van Winckel, Alican Çaglar, Benjamin Gys, Steven Brebels, Anton Potocnik, Bertrand Parvais, Piet Wambacq, Jan Craninckx:
A 28nm 6.5-8.1GHz 1.16mW/qubit Cryo-CMOS System-an-Chip for Superconducting Qubit Readout. ESSCIRC 2022: 61-64 - [c35]Abhitosh Vais, Sachin Yadav, Yves Mols, Bjorn Vermeersch, Komal Vondkar Kodandarama, Marina Baryshnikova, G. Mannaert, R. Alcotte, Geert Boccardi, Piet Wambacq, Bertrand Parvais, R. Langer, Bernardette Kunert, Nadine Collaert:
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. ESSDERC 2022: 261-264 - [c34]AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana ElKashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais:
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. ESSDERC 2022: 384-387 - [c33]Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu:
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS 2022: 10 - [c32]Vamsi Putcha, Hao Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert:
Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. IRPS 2022: 11 - 2021
- [c31]Pieter Cardinael, Sachin Yadav, Ming Zhao, Martin Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin:
Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. ESSDERC 2021: 303-306 - [c30]Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert:
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. ICICDT 2021: 1-4 - [c29]K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt:
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW 2021: 1-4 - [c28]Vamsi Putcha, Liang Cheng, AliReza Alian, Ming Zhao, Hai Lu, Bertrand Parvais, Niamh Waldron, Dimitri Linten, Nadine Collaert:
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. IRPS 2021: 1-8 - [c27]Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic:
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS 2021: 1-6 - [c26]Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer:
A BSIM-Based Predictive Hot-Carrier Aging Compact Model. IRPS 2021: 1-9 - [c25]Iuliana P. Radu, Roy Li, Anton Potocnik, Tsvetan Ivanov, Danny Wan, Stefan Kubicek, Nard I. Dumoulin Stuyck, Jeroen Verjauw, Julien Jussot, Yann Canvel, Clement Godfrin, Massimo Mongillo, Rohith Acharya, Asser Elsayed, Mohamed Shehata, Xiaoyu Piao, Antoine Pacco, Laurent Souriau, Sebastien Couet, B. T. Chan, Jan Craninckx, Bertrand Parvais, Alexander Grill, Subramanian Narasimhamoorthy, Steven Van Winckel, Steven Brebels, Fahd A. Mohiyaddin, George Simion, Bogdan Govoreanu:
Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing. VLSI Circuits 2021: 1-2 - 2020
- [c24]Alessio Spessot, Bertrand Parvais, Amita Rawat, Kenichi Miyaguchi, Pieter Weckx, Doyoung Jang, Julien Ryckaert:
Device Scaling roadmap and its implications for Logic and Analog platform. BCICTS 2020: 1-8 - [c23]Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu:
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS 2020: 1-6 - [c22]Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert:
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. IRPS 2020: 1-8
2010 – 2019
- 2019
- [j5]Marko Simicic, Pieter Weckx, Bertrand Parvais, Philippe Roussel, Ben Kaczer, Georges G. E. Gielen:
Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations. IEEE Trans. Very Large Scale Integr. Syst. 27(3): 601-610 (2019) - [c21]Dongyang Yan, Mark Ingels, Giovanni Mangraviti, Yao Liu, Bertrand Parvais, Niamh Waldron, Nadine Collaert, Piet Wambacq:
Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications. NEWCAS 2019: 1-4 - 2018
- [j4]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser:
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81: 186-194 (2018) - [c20]Bertrand Parvais, Geert Hellings, Marko Simicic, Pieter Weckx, Jérôme Mitard, Doyoung Jang, V. Deshpande, B. van Liempc, Anabela Veloso, A. Vandooren, Niamh Waldron, Piet Wambacq, Nadine Collaert, Diederik Verkest:
Scaling CMOS beyond Si FinFET: an analog/RF perspective. ESSDERC 2018: 158-161 - [c19]A. Vandooren, Liesbeth Witters, Jacopo Franco, Arindam Mallik, Bertrand Parvais, Z. Wu, Amey Walke, V. Deshpande, E. Rosseel, Andriy Hikavyy, W. Li, L. Peng, Nouredine Rassoul, Geraldine Jamieson, Fumihiro Inoue, G. Verbinnen, Katia Devriendt, Lieve Teugels, N. Heylen, E. Vecchio, T. Zheng, Niamh Waldron, Vincent De Heyn, Dan Mocuta, Nadine Collaert:
Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling. ICICDT 2018: 145-148 - 2017
- [c18]B. Kazemi Esfeh, Valeria Kilchytska, Bertrand Parvais, Nicolas Planes, M. Haond, Denis Flandre, Jean-Pierre Raskin:
Back-gate bias effect on UTBB-FDSOI non-linearity performance. ESSDERC 2017: 148-151 - 2015
- [j3]Viki Szortyka, Qixian Shi, Kuba Raczkowski, Bertrand Parvais, Maarten Kuijk, Piet Wambacq:
A 42 mW 200 fs-Jitter 60 GHz Sub-Sampling PLL in 40 nm CMOS. IEEE J. Solid State Circuits 50(9): 2025-2036 (2015) - [c17]Bertrand Parvais, Piet Wambacq, Abdelkarim Mercha, Diederik Verkest, Aaron Thean, Ken Sawada, Kazuki Nomoto, Tetsuya Oishi, Hiroaki Ammo:
A digital intensive circuit for low-frequency noise monitoring in 28nm CMOS. A-SSCC 2015: 1-4 - [c16]Kenichi Miyaguchi, Bertrand Parvais, Lars-Åke Ragnarsson, Piet Wambacq, Praveen Raghavan, Abdelkarim Mercha, Anda Mocuta, Diederik Verkest, Aaron Thean:
Modeling FinFET metal gate stack resistance for 14nm node and beyond. ICICDT 2015: 1-4 - 2014
- [c15]Julien Ryckaert, Praveen Raghavan, Rogier Baert, Marie Garcia Bardon, Mircea Dusa, Arindam Mallik, Sushil Sakhare, Boris Vandewalle, Piet Wambacq, Bharani Chava, Kris Croes, Morin Dehan, Doyoung Jang, Philippe Leray, Tsung-Te Liu, Kenichi Miyaguchi, Bertrand Parvais, Pieter Schuddinck, Philippe Weemaes, Abdelkarim Mercha, Jürgen Bömmels, Naoto Horiguchi, Greg McIntyre, Aaron Thean, Zsolt Tökei, Shaunee Cheng, Diederik Verkest, An Steegen:
Design Technology co-optimization for N10. CICC 2014: 1-8 - [c14]Vito Giannini, Davide Guermandi, Qixian Shi, Kristof Vaesen, Bertrand Parvais, Wim Van Thillo, André Bourdoux, Charlotte Soens, Jan Craninckx, Piet Wambacq:
14.2 A 79GHz phase-modulated 4GHz-BW CW radar TX in 28nm CMOS. ISSCC 2014: 250-251 - [c13]Viki Szortyka, Qixian Shi, Kuba Raczkowski, Bertrand Parvais, Maarten Kuijk, Piet Wambacq:
21.4 A 42mW 230fs-jitter sub-sampling 60GHz PLL in 40nm CMOS. ISSCC 2014: 366-367 - 2013
- [c12]Vojkan Vidojkovic, Viki Szortyka, Khaled Khalaf, Giovanni Mangraviti, Bertrand Parvais, Kristof Vaesen, Steven Brebels, Annachiara Spagnolo, Michael Libois, John R. Long, Kuba Raczkowski, Praveen Raghavan, André Bourdoux, Min Li, Charlotte Soens, Vito Giannini, Piet Wambacq:
CMOS low-power transceivers for 60GHz multi Gbit/s communications. CICC 2013: 1-8 - [c11]Vojkan Vidojkovic, Viki Szortyka, Khaled Khalaf, Giovanni Mangraviti, Steven Brebels, Wim Van Thillo, Kristof Vaesen, Bertrand Parvais, Vadim Issakov, Mike Libois, Michiaki Matsuo, John R. Long, Charlotte Soens, Piet Wambacq:
A low-power radio chipset in 40nm LP CMOS with beamforming for 60GHz high-data-rate wireless communication. ISSCC 2013: 236-237 - 2012
- [c10]Vojkan Vidojkovic, Giovanni Mangraviti, Khaled Khalaf, Viki Szortyka, Kristof Vaesen, Wim Van Thillo, Bertrand Parvais, Mike Libois, Steven Thijs, John R. Long, Charlotte Soens, Piet Wambacq:
A low-power 57-to-66GHz transceiver in 40nm LP CMOS with -17dB EVM at 7Gb/s. ISSCC 2012: 268-270 - 2010
- [c9]Bertrand Parvais, Karen Scheir, Vojkan Vidojkovic, R. Vandebriel, Gerd Vandersteen, Charlotte Soens, Piet Wambacq:
A 40 nm LP CMOS PLL for high-speed mm-wave communication. ESSCIRC 2010: 254-257 - [c8]Vaidyanathan Subramanian, Abdelkarim Mercha, Bertrand Parvais, Morin Dehan, Guido Groeseneken, Willy M. C. Sansen, Stefaan Decoutere:
Identifying the Bottlenecks to the RF Performance of FinFETs. VLSI Design 2010: 111-116
2000 – 2009
- 2009
- [j2]Davide Ponton, Pierpaolo Palestri, David Esseni, Luca Selmi, Marc Tiebout, Bertrand Parvais, Domagoj Siprak, Gerhard Knoblinger:
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices. IEEE Trans. Circuits Syst. I Regul. Pap. 56-I(5): 920-932 (2009) - [c7]Thomas Chiarella, Liesbeth Witters, Abdelkarim Mercha, Christoph Kerner, Rok Dittrich, Michal Rakowski, Claude Ortolland, Lars-Åke Ragnarsson, Bertrand Parvais, An De Keersgieter, Stefan Kubicek, Augusto Redolfi, R. Rooyackers, C. Vrancken, S. Brus, A. Lauwers, Philippe Absil, S. Biesemans, Thomas Y. Hoffmann:
Migrating from planar to FinFET for further CMOS scaling: SOI or bulk? ESSCIRC 2009: 84-87 - [c6]Domagoj Siprak, Piet Wambacq, Bertrand Parvais, Abdelkarim Mercha, Michael Fulde, Jesenka Veledar Kruger, Morin Dehan, Stefaan Decoutere:
FinFET RF receiver building blocks operating above 10 GHz. ESSCIRC 2009: 360-363 - 2008
- [c5]Davide Ponton, Pierpaolo Palestri, David Esseni, Luca Selmi, Marc Tiebout, Bertrand Parvais, Gerhard Knoblinger:
Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET. ISCAS 2008: 2701-2704 - [c4]Piet Wambacq, Abdelkarim Mercha, Karen Scheir, Bob Verbruggen, Jonathan Borremans, Vincent De Heyn, Steven Thijs, Dimitri Linten, Geert Van der Plas, Bertrand Parvais, Morin Dehan, Stefaan Decoutere, Charlotte Soens, Nadine Collaert, Malgorzata Jurczak:
Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies. ISSCC 2008: 528-529 - 2007
- [j1]Piet Wambacq, Bob Verbruggen, Karen Scheir, Jonathan Borremans, Morin Dehan, Dimitri Linten, Vincent De Heyn, Geert Van der Plas, Abdelkarim Mercha, Bertrand Parvais, Cedric Gustin, Vaidyanathan Subramanian, Nadine Collaert, Malgorzata Jurczak, Stefaan Decoutere:
The Potential of FinFETs for Analog and RF Circuit Applications. IEEE Trans. Circuits Syst. I Regul. Pap. 54-I(11): 2541-2551 (2007) - [c3]Bertrand Parvais, S. Hu, Morin Dehan, Abdelkarim Mercha, Stefaan Decoutere:
An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs. CICC 2007: 503-506 - [c2]Michael Fulde, Abdelkarim Mercha, Cedric Gustin, Bertrand Parvais, Vaidyanathan Subramanian, Klaus von Arnim, Florian Bauer, Klaus Schruefer, Doris Schmitt-Landsiedel, Gerhard Knoblinger:
Analog design challenges and trade-offs using emerging materials and devices. ESSCIRC 2007: 123-126 - [c1]Bertrand Parvais, Vaidyanathan Subramanian, Abdelkarim Mercha, Morin Dehan, Piet Wambacq, Willy Sansen, Guido Groeseneken, Stefaan Decoutere:
FinFET technology for analog and RF circuits. ICECS 2007: 182-185
Coauthor Index
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