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2020 – today
- 2023
[j9]Jiseong Lee
, Min Joon Kim, Woo-Seop Kim, Yong Sin Kim:
Review of Memory RAS for Data Centers. IEEE Access 11: 124782-124796 (2023)
2010 – 2019
- 2013
- [c4]Seung Mo Jung, Jong Hyun Seok, Ho Jin Yoo, Do Hyung Kim, You Keun Han, Woo-Seop Kim, Joo-Sun Choi, Jun Dong Cho:
Noise immunity improvement in the RESET signal of DDR3 SDRAM memory module. SoCC 2013: 343-348 - 2011
- [c3]Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, Si-Hong Kim, Yun-Seok Yang, Dae-Hyun Kim, Sang-Hyup Kwak, Ho-Seok Seol, Chang-Ho Shin, Min-Sang Park, Gong-Heom Han, Byeong-Cheol Kim, Yong-Ki Cho, Hye-Ran Kim, Su-Yeon Doo, Young-Sik Kim, Dong-Seok Kang, Young-Ryeol Choi, Sam-Young Bang, Sun-Young Park, Yong-Jae Shin, Gil-Shin Moon, Cheol-Goo Park, Woo-Seop Kim, Hyang-Ja Yang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW. ISSCC 2011: 498-500 - 2010
- [j8]Uksong Kang, Hoeju Chung, Seongmoo Heo, Dukha Park, Hoon Lee, Jin Ho Kim, Soon-Hong Ahn, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jaewook Lee, Han-Sung Joo, Woo-Seop Kim, Dong Hyeon Jang, Nam-Seog Kim, Jung-Hwan Choi, Tae-Gyeong Chung, Jei-Hwan Yoo, Joo-Sun Choi, Changhyun Kim, Young-Hyun Jun:
8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology. IEEE J. Solid State Circuits 45(1): 111-119 (2010) - [j7]Ki-Whan Song, Jinyoung Kim, Jae-Man Yoon, Sua Kim, Huijung Kim, Hyun-Woo Chung, Hyungi Kim, Kanguk Kim, Hwan-Wook Park, Hyun Chul Kang, Nam-Kyun Tak, Dukha Park, Woo-Seop Kim, Yeong-Taek Lee, Yong Chul Oh, Gyo-Young Jin, Jei-Hwan Yoo, Donggun Park, Kyungseok Oh, Changhyun Kim, Young-Hyun Jun:
A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency. IEEE J. Solid State Circuits 45(4): 880-888 (2010)
2000 – 2009
- 2009
- [j6]Young-Chan Jang, Hoeju Chung, Youngdon Choi, Hwan-Wook Park, Jaekwan Kim, Soouk Lim, Jung Sunwoo, Moon-Sook Park, Hyung-Seuk Kim, Sang-Yun Kim, Yun-Sang Lee, Woo-Seop Kim, Jung-Bae Lee, Jei-Hwan Yoo, Changhyun Kim:
BER Measurement of a 5.8-Gb/s/pin Unidirectional Differential I/O for DRAM Application With DIMM Channel. IEEE J. Solid State Circuits 44(11): 2987-2998 (2009) - [c2]Uksong Kang, Hoeju Chung, Seongmoo Heo, Soon-Hong Ahn, Hoon Lee, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jin Ho Kim, Jaewook Lee, Han-Sung Joo, Woo-Seop Kim, Hyun-Kyung Kim, Eun-Mi Lee, So-Ra Kim, Keum-Hee Ma, Dong-Hyun Jang, Nam-Seog Kim, Man-Sik Choi, Sae-Jang Oh, Jung-Bae Lee, Tae-Kyung Jung, Jei-Hwan Yoo, Changhyun Kim:
8Gb 3D DDR3 DRAM using through-silicon-via technology. ISSCC 2009: 130-131 - 2007
- [j5]Kyu-Hyoun Kim, Hoeju Chung, Woo-Seop Kim, Moon-Sook Park, Young-Chan Jang, Jinyoung Kim, Hwan-Wook Park, Uksong Kang, Paul W. Coteus, Joo-Sun Choi, Changhyun Kim:
An 8 Gb/s/pin 9.6 ns Row-Cycle 288 Mb Deca-Data Rate SDRAM With an I/O Error Detection Scheme. IEEE J. Solid State Circuits 42(1): 193-200 (2007) - 2006
- [j4]Kyu-Hyoun Kim, Young-Soo Sohn, Chan-Kyoung Kim, Moon-Sook Park, Dong-Jin Lee, Woo-Seop Kim, Changhyun Kim:
A 20-gb/s 256-mb DRAM with an inductorless quadrature PLL and a cascaded pre-emphasis transmitter. IEEE J. Solid State Circuits 41(1): 127-134 (2006) - [c1]Kyu-Hyoun Kim, Uksong Kang, Hoeju Chung, Dukha Park, Woo-Seop Kim, Young-Chan Jang, Moon-Sook Park, Hoon Lee, Jinyoung Kim, Jung Sunwoo, Hwan-Wook Park, Hyun-Kyung Kim, Su-Jin Chung, Jae-Kwan Kim, Hyung-Seuk Kim, Kee-Won Kwon, Young-Taek Lee, Joo-Sun Choi, Changhyun Kim:
An 8Gb/s/pin 9.6ns Row-Cycle 288Mb Deca-Data Rate SDRAM with an I/O Error-Detection Scheme. ISSCC 2006: 527-536 - 2005
- [j3]Jin-Hyun Kim, Sua Kim, Woo-Seop Kim, Jung-Hwan Choi, Hong-Sun Hwang, Changhyun Kim, Suki Kim:
A 4-Gb/s/pin low-power memory I/O interface using 4-level simultaneous bi-directional signaling. IEEE J. Solid State Circuits 40(1): 89-101 (2005) - [j2]Joseph T. Kennedy, Randy Mooney, Robert Ellis, James E. Jaussi, Shekhar Borkar, Jung-Hwan Choi, Jae-Kwan Kim, Chan-Kyong Kim, Woo-Seop Kim, Chang-Hyun Kim, Soo-In Cho, Steffen Loeffler, Jochen Hoffmann, Wolfgang Hokenmaier, Russ Houghton, Thomas Vogelsang:
A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems. IEEE J. Solid State Circuits 40(1): 233-244 (2005) - 2002
- [j1]Woo-Seop Kim, Lok-Won Kim, Chang-Eun Lee, Kyeong-Deok Moon, Suki Kim:
A control network architecture based on EIA-709.1 protocol for power line data communications. IEEE Trans. Consumer Electron. 48(3): 650-655 (2002)
Coauthor Index
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