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Jan Van Houdt
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2020 – today
- 2024
- [c24]Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen:
Gate Side Injection Operating Mode for 3D NAND Flash Memories. IMW 2024: 1-4 - [c23]Taras Ravsher, Andrea Fantini, Kruti Trivedi, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Jan Van Houdt, Valeri Afanas'ev, Kurt Wostyn, Sebastien Couet, Gouri Sankar Kar:
Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification. IMW 2024: 1-4 - [c22]Taras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar:
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. IRPS 2024: 7 - [i1]Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt:
Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. CoRR abs/2404.13138 (2024) - 2023
- [c21]Mihaela Ioana Popovici, Jasper Bizindavyi, Gourab De, Dae Seon Kwon, Gouri Sankar Kar, Jan Van Houdt:
Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconate. ESSDERC 2023: 121-124 - [c20]Laurent Breuil, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh
, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen:
Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. IMW 2023: 1-4 - [c19]Zhuo Chen, Nicolo Ronchi, Amey Walke
, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt:
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW 2023: 1-4 - [c18]Swatilekha Majumdar, Stefan Cosemans, Arindam Mallik, Peter Debacker, Francky Catthoor, Jan Van Houdt:
Evaluating the Effects of FeFET Device Variability on Charge Sharing Based AiMC Accelerator. ISCAS 2023: 1-5 - 2022
- [c17]Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano
, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, Geert Van den Bosch, Jan Van Houdt:
A comprehensive variability study of doped HfO2 FeFET for memory applications. IMW 2022: 1-4 - [c16]Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt:
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS 2022: 4 - [c15]Taras Ravsher
, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar:
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. IRPS 2022: 10-1 - [c14]Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt:
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS 2022: 12-1 - [c13]Taras Ravsher
, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar:
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. VLSI Technology and Circuits 2022: 312-313 - [c12]Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt:
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits 2022: 340-342 - 2021
- [c11]K. Banerjee, Laurent Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell
, L. Di Piazza, Geert Van den Bosch, Jan Van Houdt:
First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. IMW 2021: 1-4 - [c10]K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais
, Guido Groeseneken
, Jan Van Houdt:
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW 2021: 1-4 - [c9]Taras Ravsher
, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar:
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. IMW 2021: 1-4 - [c8]Anastasiia Kruv, Sean R. C. McMitchell
, Sergiu Clima, Oguzhan O. Okudur
, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt:
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. IRPS 2021: 1-6 - [c7]D. Saito, T. Kobayashi, Hiroki Koga, Nicolo Ronchi, Kaustuv Banerjee, Yusuke Shuto, Jun Okuno, Kenta Konishi, Luca Di Piazza, Arindam Mallik, Jan Van Houdt, Masanori Tsukamoto, K. Ohkuri, Taku Umebayashi, Takayuki Ezaki:
Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications. VLSI Circuits 2021: 1-2 - 2020
- [c6]Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer
, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe
, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng
:
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS 2020: 1-9
2010 – 2019
- 2019
- [c5]Yusuke Higashi
, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell
, Kaustuv Banerjee, Umberto Celano
, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt:
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS 2019: 1-7 - [c4]Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann:
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. NVMTS 2019: 1-4 - 2018
- [c3]Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano
, Ben Kaczer, Luca Di Piazza, Mihaela Ioana Popovici, Guido Groeseneken
, Jan Van Houdt:
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS 2018: 6 - 2017
- [c2]Karine Florent, Simone Lavizzari, Luca Di Piazza, Mihaela Ioana Popovici, Goedele Potoms, Tom Raymaekers, Guido Groeseneken
, Jan Van Houdt:
From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration. ESSDERC 2017: 164-167 - [c1]Naga Sruti Avasarala, Bogdan Govoreanu, Karl Opsomer, Wouter Devulder
, Sergiu Clima, Christophe Detavernier, Marleen van der Veen, Jan Van Houdt, Marc Henys, Ludovic Goux, Gouri Sankar Kar:
Doped GeSe materials for selector applications. ESSDERC 2017: 168-171 - 2014
- [j10]Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt:
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. Microelectron. Reliab. 54(9-10): 1697-1701 (2014) - [j9]Baojun Tang, Weidong Zhang
, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang
, Jan Van Houdt:
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations. Microelectron. Reliab. 54(9-10): 2258-2261 (2014) - 2012
- [j8]Pavel Poliakov, Pieter Blomme, Alessandro Vaglio Pret, Miguel Corbalan Miranda, Roel Gronheid, Diederik Verkest, Jan Van Houdt, Wim Dehaene:
Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories. Microelectron. Reliab. 52(3): 525-529 (2012) - 2011
- [j7]Pavel Poliakov, Pieter Blomme, Miguel Corbalan, Jan Van Houdt, Wim Dehaene:
Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness. Microelectron. Reliab. 51(5): 919-924 (2011)
2000 – 2009
- 2007
- [j6]Giuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt:
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique. Microelectron. Reliab. 47(4-5): 508-512 (2007) - [j5]Isodiana Crupi
, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt:
Distribution and generation of traps in SiO2/Al2O3 gate stacks. Microelectron. Reliab. 47(4-5): 525-527 (2007) - 2003
- [j4]Jan Van Houdt, Dirk Wellekens, Luc Haspeslagh:
The HIMOS flash technology: the alternative solution for low-cost embedded memory. Proc. IEEE 91(4): 627-635 (2003) - 2001
- [j3]Jorgo Tsouhlarakis, Guido Vanhorebeek, Geert Verhoeven, Jan De Blauwe, Shiho Kim, Dirk Wellekens, Paul Hendrickx, Luc Haspeslagh, Jan Van Houdt, Herman Maes:
A flash memory technology with quasi-virtual ground array for low-cost embedded applications. IEEE J. Solid State Circuits 36(6): 969-978 (2001) - [j2]M. Lorenzini, Luc Haspeslagh, Jan Van Houdt, Herman E. Maes:
Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles. VLSI Design 13(1-4): 459-463 (2001)
1990 – 1999
- 1998
- [j1]Donato Montanari, Jan Van Houdt, Guido Groeseneken
, Herman E. Maes:
Novel level-identifying circuit for flash multilevel memories. IEEE J. Solid State Circuits 33(7): 1090-1095 (1998)
Coauthor Index
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