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Esteve Amat
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2010 – 2019
- 2018
- [j11]Esteve Amat
, Antonio Calomarde
, Ramon Canal, Antonio Rubio:
Optimization of FinFET-Based Gain Cells for Low Power Sub-V T Embedded DRAMs. J. Low Power Electron. 14(2): 236-243 (2018) - [j10]Peyman Pouyan
, Esteve Amat
, Antonio Rubio
:
Memristive Crossbar Memory Lifetime Evaluation and Reconfiguration Strategies. IEEE Trans. Emerg. Top. Comput. 6(2): 207-218 (2018) - [c17]Esteve Amat
, Alberto del Moral
, Joan R. Bausells, Francesc Pérez-Murano, Fabian J. Klüpfel:
Quantum dot location relevance into SET-FET circuits based on FinFET devices. DCIS 2018: 1-5 - [c16]Esteve Amat
, Ramon Canal, Antonio Rubio:
Modem Gain-Cell Memories in Advanced Technologies. IOLTS 2018: 65-68 - 2017
- [j9]Peyman Pouyan, Esteve Amat
, Said Hamdioui, Antonio Rubio:
Resistive Random Access Memory Variability and Its Mitigation Schemes. J. Low Power Electron. 13(1): 124-134 (2017) - [c15]Esteve Amat
, Antonio Calomarde
, Ramon Canal, Antonio Rubio:
Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level. PATMOS 2017: 1-6 - 2016
- [j8]Esteve Amat
, Antonio Calomarde
, Francesc Moll
, Ramon Canal
, Antonio Rubio:
Feasibility of Embedded DRAM Cells on FinFET Technology. IEEE Trans. Computers 65(4): 1068-1074 (2016) - [c14]Manish Rana, Ramon Canal
, Esteve Amat
, Antonio Rubio:
Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation. IOLTS 2016: 33-38 - [c13]Peyman Pouyan, Esteve Amat
, Antonio Rubio:
Monitoring SRAM BTI degradation by current-based tracking technique. NEWCAS 2016: 1-4 - [c12]Peyman Pouyan, Esteve Amat
, Said Hamdioui, Antonio Rubio:
RRAM variability and its mitigation schemes. PATMOS 2016: 141-146 - 2015
- [j7]Esteve Amat
, Antonio Calomarde
, Ramon Canal, Antonio Rubio:
Variability Influence on FinFET-Based On-Chip Memory Data Paths. J. Low Power Electron. 11(2): 250-255 (2015) - [j6]Peyman Pouyan
, Esteve Amat
, Antonio Rubio:
Adaptive Proactive Reconfiguration: A Technique for Process-Variability- and Aging-Aware SRAM Cache Design. IEEE Trans. Very Large Scale Integr. Syst. 23(9): 1951-1955 (2015) - [c11]Peyman Pouyan, Esteve Amat
, Antonio Rubio:
Statistical lifetime analysis of memristive crossbar matrix. DTIS 2015: 1-6 - [c10]Peyman Pouyan, Esteve Amat
, Antonio Rubio:
Memristive crossbar design and test in non-adaptive proactive reconfiguring scheme. ECCTD 2015: 1-4 - [c9]Edith Beigné
, Jean-Frédéric Christmann, Alexandre Valentian, Olivier Billoint, Esteve Amat
, Dominique Morche:
UTBB FDSOI technology flexibility for ultra low power internet-of-things applications. ESSDERC 2015: 164-167 - [c8]Peyman Pouyan, Esteve Amat
, Antonio Rubio:
Analysis and design of an adaptive proactive reconfiguration approach for memristive crossbar memories. NANOARCH 2015: 100-105 - 2014
- [j5]Esteve Amat
, Carmen G. Almudéver
, Nivard Aymerich, Ramon Canal, Antonio Rubio:
Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm. Microelectron. J. 45(10): 1342-1347 (2014) - [j4]Antonio Calomarde
, Esteve Amat
, Francesc Moll
, Julio Vigara, Antonio Rubio:
SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET. Microelectron. Reliab. 54(4): 738-745 (2014) - [c7]Peyman Pouyan, Esteve Amat
, Enrique Barajas
, Antonio Rubio:
Impact of adaptive proactive reconfiguration technique on Vmin and lifetime of SRAM caches. ISQED 2014: 32-38 - 2013
- [j3]Esteve Amat
, E. Amatllé, Sergio Gómez, Nivard Aymerich, Carmen G. Almudéver
, Francesc Moll
, Antonio Rubio:
Systematic and random variability analysis of two different 6T-SRAM layout topologies. Microelectron. J. 44(9): 787-793 (2013) - [c6]Peyman Pouyan, Esteve Amat, Francesc Moll, Antonio Rubio:
Design and implementation of an adaptive proactive reconfiguration technique for SRAM caches. DATE 2013: 1303-1306 - [c5]Esteve Amat, Antonio Calomarde, Antonio Rubio:
Reliability study on technology trends beyond 20nm. MIXDES 2013: 414-418 - [c4]Esteve Amat
, Carmen G. Almudéver
, Nivard Aymerich, Antonio Rubio, Ramon Canal:
Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells. MWSCAS 2013: 81-84 - [c3]Antonio Calomarde
, Esteve Amat
, Francesc Moll
, Antonio Rubio:
A single event transient hardening circuit design technique based on strengthening. MWSCAS 2013: 821-824 - 2012
- [c2]Esteve Amat
, A. Asenov, Ramon Canal, Binjie Cheng, J.-Ll. Cruz, Zoran Jaksic
, Miguel Miranda, Antonio Rubio, Paul Zuber:
Analysis of FinFET technology on memories. IOLTS 2012: 169 - [c1]Peyman Pouyan, Esteve Amat
, Antonio Rubio:
Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime. VTS 2012: 240-245 - 2010
- [j2]Javier Martín-Martínez, Esteve Amat
, M. B. González
, P. Verheyen, Rosana Rodríguez, Montserrat Nafría
, Xavier Aymerich
, Eddy Simoen:
SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors. Microelectron. Reliab. 50(9-11): 1263-1266 (2010)
2000 – 2009
- 2007
- [j1]Esteve Amat
, Rosana Rodríguez, Montserrat Nafría
, Xavier Aymerich
, James H. Stathis
:
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions. Microelectron. Reliab. 47(4-5): 544-547 (2007)
Coauthor Index
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