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ORCIDKevin W. Kobayashi
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2020 – today
- 2023
[j13]Kevin W. Kobayashi
, Paul Partyka, Tim Howle, Tony Sellas, Leonard Hayden:
A Ka-Band InP HBT MMIC Power Amplifier With 19.8:1 IP3/Pdc LFOM at 48 GHz. IEEE J. Solid State Circuits 58(9): 2441-2450 (2023)- 2022
- [c4]Kevin W. Kobayashi, Paul Partyka, Tim Howle, Tony Sellas, Leonard Hayden:
High Linearity Ka-band InP HBT MMIC Amplifier with 19.8:1 IP3/Pdc LFOM at 48 GHz. BCICTS 2022: 128-131 - 2020
- [j12]Kevin W. Kobayashi, Ying Z. McCleary:
Baseband to 140-GHz SiGe HBT and 100-GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers With Active Bias Terminations. IEEE J. Solid State Circuits 55(9): 2336-2344 (2020) - [c3]Kevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao:
18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA. BCICTS 2020: 1-4 - [c2]Kevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao, Jose Jimenez:
Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology. BCICTS 2020: 1-4
2010 – 2019
- 2019
- [c1]Kevin W. Kobayashi, Ying Z. McCleary:
140GHz SiGe HBT and 100GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers with Active Bias Terminations. BCICTS 2019: 1-4 - 2016
- [j11]Kevin W. Kobayashi, Dan Denninghoff, Dain Miller:
A Novel 100 MHz-45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch 0.15~ μm GaN-SiC Wafer Process Technology. IEEE J. Solid State Circuits 51(9): 2017-2026 (2016) - 2012
- [j10]Kevin W. Kobayashi:
An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3. IEEE J. Solid State Circuits 47(10): 2316-2326 (2012)
2000 – 2009
- 2009
- [j9]Kevin W. Kobayashi, YaoChung Chen, Ioulia Smorchkova, Benjamin Heying, Wen-Ben Luo, William Sutton, Mike Wojtowicz, Aaron K. Oki:
A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power. IEEE J. Solid State Circuits 44(10): 2648-2654 (2009) - 2007
- [j8]Kevin W. Kobayashi:
Linearized Darlington Cascode Amplifier Employing GaAs PHEMT and GaN HEMT Technologies. IEEE J. Solid State Circuits 42(10): 2116-2122 (2007)
1990 – 1999
- 1999
- [j7]Kevin W. Kobayashi, John C. Cowles, Liem T. Tran, Augusto Gutierrez-Aitken, Matt Nishimoto, Jeffrey H. Elliott, Thomas R. Block, Aaron K. Oki, Dwight C. Streit:
A 44-GHz-high IP3 InP HBT MMIC amplifier for low DC power millimeter-wave receiver applications. IEEE J. Solid State Circuits 34(9): 1188-1195 (1999) - [j6]Kevin W. Kobayashi, Aaron K. Oki, Liem T. Tran, John C. Cowles, Augusto Gutierrez-Aitken, Frank Yamada, Thomas R. Block, Dwight C. Streit:
A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth. IEEE J. Solid State Circuits 34(9): 1225-1232 (1999) - 1998
- [j5]Kevin W. Kobayashi, Aaron K. Oki, Donald K. Umemoto, Tomas Ray Block, Dwight C. Streit:
A novel self-oscillating HEMT-HBT cascode VCO-mixer using an active tunable inductor. IEEE J. Solid State Circuits 33(6): 870-876 (1998) - 1996
- [j4]Kevin W. Kobayashi, Donald K. Umemoto, Thomas R. Block, Aaron K. Oki, Dwight C. Streit:
A monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier. IEEE J. Solid State Circuits 31(5): 714-718 (1996) - [j3]Kevin W. Kobayashi, Robert Kasody, Aaron K. Oki, Dwight C. Streit:
A 5-10 GHz octave-band AlGaAs/GaAs HBT-Schottky diode down-converter MMIC. IEEE J. Solid State Circuits 31(10): 1412-1418 (1996) - 1994
- [j2]Kevin W. Kobayashi, Liem T. Tran, Stacey Bui, Aaron K. Oki, Dwight C. Streit, Mark Rosen:
InAlAs/InGaAs HBT X-band double-balanced upconverter. IEEE J. Solid State Circuits 29(10): 1238-1243 (1994) - [j1]Kevin W. Kobayashi, Kwan T. Ip, Aaron K. Oki, Donald K. Umemoto, Sahimwn Claxton, Matt Pope, Jerry Wiltz:
GaAs HBT 0.75-5 GHz multifunctional microwave-analog variable gain amplifier. IEEE J. Solid State Circuits 29(10): 1257-1261 (1994)
Coauthor Index
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