BibTeX records: Davide Bisi

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@article{DBLP:journals/mr/MeneghessoMBRWH16,
  author    = {Gaudenzio Meneghesso and
               Matteo Meneghini and
               Davide Bisi and
               Isabella Rossetto and
               Tian{-}Li Wu and
               Marleen Van Hove and
               Denis Marcon and
               Steve Stoffels and
               Stefaan Decoutere and
               Enrico Zanoni},
  title     = {Trapping and reliability issues in GaN-based {MIS} HEMTs with partially
               recessed gate},
  journal   = {Microelectron. Reliab.},
  volume    = {58},
  pages     = {151--157},
  year      = {2016}
}
@article{DBLP:journals/mr/BisiSRMRCSPLGLT15,
  author    = {Davide Bisi and
               Antonio Stocco and
               Isabella Rossetto and
               Matteo Meneghini and
               Fabiana Rampazzo and
               Alessandro Chini and
               Fabio Soci and
               A. Pantellini and
               Claudio Lanzieri and
               Piero Gamarra and
               C. Lacam and
               M. Tordjman and
               Marie{-}Antoinette di Forte{-}Poisson and
               Davide De Salvador and
               M. Bazzan and
               Gaudenzio Meneghesso and
               Enrico Zanoni},
  title     = {Effects of buffer compensation strategies on the electrical performance
               and {RF} reliability of AlGaN/GaN HEMTs},
  journal   = {Microelectron. Reliab.},
  volume    = {55},
  number    = {9-10},
  pages     = {1662--1666},
  year      = {2015}
}
@article{DBLP:journals/mr/RossettoMBBHMWD15,
  author    = {Isabella Rossetto and
               Matteo Meneghini and
               Davide Bisi and
               Alessandro Barbato and
               Marleen Van Hove and
               Denis Marcon and
               Tian{-}Li Wu and
               Stefaan Decoutere and
               Gaudenzio Meneghesso and
               Enrico Zanoni},
  title     = {Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN
               MIS-HEMTs},
  journal   = {Microelectron. Reliab.},
  volume    = {55},
  number    = {9-10},
  pages     = {1692--1696},
  year      = {2015}
}
@inproceedings{DBLP:conf/irps/MeneghiniSDBZMV15,
  author    = {Matteo Meneghini and
               Riccardo Silvestri and
               Stefano Dalcanale and
               Davide Bisi and
               Enrico Zanoni and
               Gaudenzio Meneghesso and
               Piet Vanmeerbeek and
               Abhishek Banerjee and
               Peter Moens},
  title     = {Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon
               power transistors},
  booktitle = {{IRPS}},
  pages     = {2},
  publisher = {{IEEE}},
  year      = {2015}
}
@article{DBLP:journals/mr/StoccoGBDRMMGLB14,
  author    = {Antonio Stocco and
               Simone Gerardin and
               Davide Bisi and
               Stefano Dalcanale and
               Fabiana Rampazzo and
               Matteo Meneghini and
               Gaudenzio Meneghesso and
               Jan Gr{\"{u}}nenp{\"{u}}tt and
               Benoit Lambert and
               Herv{\'{e}} Blanck and
               Enrico Zanoni},
  title     = {Proton induced trapping effect on space compatible GaN HEMTs},
  journal   = {Microelectron. Reliab.},
  volume    = {54},
  number    = {9-10},
  pages     = {2213--2216},
  year      = {2014}
}
@inproceedings{DBLP:conf/essderc/MarinoBMVZHYDMSRM14,
  author    = {Fabio Alessio Marino and
               Davide Bisi and
               Matteo Meneghini and
               Giovanni Verzellesi and
               Enrico Zanoni and
               Marleen Van Hove and
               Shuzhen You and
               Stefaan Decoutere and
               Denis Marcon and
               Steve Stoffels and
               Nicolo Ronchi and
               Gaudenzio Meneghesso},
  title     = {Breakdown investigation in GaN-based {MIS-HEMT} devices},
  booktitle = {{ESSDERC}},
  pages     = {377--380},
  publisher = {{IEEE}},
  year      = {2014}
}
@inproceedings{DBLP:conf/essderc/BisiSMRCMZ14,
  author    = {Davide Bisi and
               Antonio Stocco and
               Matteo Meneghini and
               Fabiana Rampazzo and
               Andrea Cester and
               Gaudenzio Meneghesso and
               Enrico Zanoni},
  title     = {Characterization of high-voltage charge-trapping effects in GaN-based
               power HEMTs},
  booktitle = {{ESSDERC}},
  pages     = {389--392},
  publisher = {{IEEE}},
  year      = {2014}
}
@inproceedings{DBLP:conf/essderc/BisiMSCPNLZM13,
  author    = {Davide Bisi and
               Matteo Meneghini and
               Antonio Stocco and
               Giulia Cibin and
               Alessio Pantellini and
               Antonio Nanni and
               Claudio Lanzieri and
               Enrico Zanoni and
               Gaudenzio Meneghesso},
  title     = {Influence of fluorine-based dry etching on electrical parameters of
               AlGaN/GaN-on-Si High Electron Mobility Transistors},
  booktitle = {{ESSDERC}},
  pages     = {61--64},
  publisher = {{IEEE}},
  year      = {2013}
}
@article{DBLP:journals/mr/ChiniSFNPLBMZ12,
  author    = {Alessandro Chini and
               Fabio Soci and
               Fausto Fantini and
               A. Nanni and
               A. Pantellini and
               Claudio Lanzieri and
               Davide Bisi and
               Gaudenzio Meneghesso and
               Enrico Zanoni},
  title     = {Field plate related reliability improvements in GaN-on-Si HEMTs},
  journal   = {Microelectron. Reliab.},
  volume    = {52},
  number    = {9-10},
  pages     = {2153--2158},
  year      = {2012}
}
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