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2010 – 2019
- 2017
[c9]Tom Schram, Quentin Smets, Benjamin Groven
, M. H. Heyne, E. Kunnen, A. Thiam, K. Devriendt, Annelies Delabie, Dennis Lin, M. Lux, Daniele Chiappe, I. Asselberghs, S. Brus, Cedric Huyghebaert, S. Sayan, A. Juncker, Matty Caymax, Iuliana P. Radu:
WS2 transistors on 300 mm wafers with BEOL compatibility. ESSDERC 2017: 212-215- 2016
- [c8]Thomas Chiarella, S. Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, A. De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean:
Towards high performance sub-10nm finW bulk FinFET technology. ESSDERC 2016: 131-134 - 2015
- [c7]Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten:
Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT 2015: 1-4 - [c6]Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, C. Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son:
I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration. ICICDT 2015: 1-4 - [c5]Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son:
Assessment of SiGe quantum well transistors for DRAM peripheral applications. ICICDT 2015: 1-4 - [c4]Alessio Spessot, Romain Ritzenthaler, Tom Schram, Marc Aoulaiche, Moonju Cho, Maria Toledano-Luque, Naoto Horiguchi, Pierre Fazan:
Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs. ICICDT 2015: 1-4 - 2014
- [c3]Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer:
Impact of Off State Stress on advanced high-K metal gate NMOSFETs. ESSDERC 2014: 365-368 - 2013
- [c2]Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, H. Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, N. Horiguchi, Aaron Thean, A. Federico, Felice Crupi, Alessio Spessot, C. Caillat, Pierre Fazan, H.-J. Na, Y. Son, K. B. Noh:
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC 2013: 190-193 - 2012
- [c1]Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, C. Caillat, V. Srividya, Pierre Fazan:
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. ESSDERC 2012: 242-245
2000 – 2009
- 2007
- [j3]Z. Li, Tom Schram, Luigi Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, Sven Van Elshocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, Stefan De Gendt, Kristin De Meyer:
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks. Microelectron. Reliab. 47(4-5): 518-520 (2007) - 2005
- [j2]Tom Schram, L.-Å. Ragnarsson, G. S. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen:
Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors. Microelectron. Reliab. 45(5-6): 779-782 (2005) - [j1]W. Deweerd, Vidya Kaushik, J. Chen, Y. Shimamoto, Tom Schram, L.-Å. Ragnarsson, Annelies Delabie, Luigi Pantisano, B. Eyckens, J. W. Maes:
Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. Microelectron. Reliab. 45(5-6): 786-789 (2005)
Coauthor Index
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