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Han Wui Then
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2020 – today
- 2024
- [c5]Soumitra Joy, Kaustubh Joshi, Ahmad Zubair, Samuel Bader, Jason Peck, Michael Beumer, Pratik Koirala, Marko Radosavljevic, Heli Vora, Inanc Meric, Han Wui Then:
PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors. IRPS 2024: 6 - 2022
- [j2]Nachiket V. Desai, Han Wui Then, Jingshu Yu, Harish K. Krishnamurthy, William J. Lambert, Nicolas Butzen, Sheldon Weng, Christopher Schaef, Kaladhar Radhakrishnan, Krishnan Ravichandran, James W. Tschanz, Vivek De:
A 32-A, 5-V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN nMOS Power Transistors. IEEE J. Solid State Circuits 57(4): 1090-1099 (2022) - [c4]Qiang Yu, Derek Thomson, Han Wui Then, Alvaro Latorre-Rey, Marko Radosavljevic, Michael Beumer, Pratik Koirala, Nicole Thomas, Nityan Nair, Heli Vora, Samuel Bader, Said Rami:
A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology. BCICTS 2022: 144-147 - [c3]Qiang Yu, Han Wui Then, Derek Thomson, Jessica C. Chou, Jeffrey Garrett, Iwen Huang, Ibukunoluwa Momson, Surej Ravikumar, Seahee Hwangbo, Alvaro Latorre-Rey, Ananda Roy, Marko Radosavljevic, Michael Beumer, Pratik Koirala, Nicole Thomas, Nityan Nair, Heli Vora, Samuel Bader, Johann Rode, Jonathan Jensen, Said Rami:
5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology. VLSI Technology and Circuits 2022: 126-127 - 2021
- [c2]Nachiket V. Desai, Harish K. Krishnamurthy, William J. Lambert, Jingshu Yu, Han Wui Then, Nicolas Butzen, Sheldon Weng, Christopher Schaef, N. Nidhi, Marko Radosavljevic, Johann Rode, Justin Sandford, Kaladhar Radhakrishnan, Krishnan Ravichandran, Bernhard Sell, James W. Tschanz, Vivek De:
A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors. VLSI Circuits 2021: 1-2
2010 – 2019
- 2019
- [c1]Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz Gardner, Seung-Hoon Sung, Paul Fischer:
High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper). DRC 2019: 39-40 - 2013
- [j1]Han Wui Then, Milton Feng, Nick Holonyak:
The Transistor Laser: Theory and Experiment. Proc. IEEE 101(10): 2271-2298 (2013)
2000 – 2009
- 2009
- [b1]Han Wui Then:
Characteristics, Theory and Modeling of the Transistor Laser. University of Illinois Urbana-Champaign, USA, 2009
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