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Takeshi Ohshima
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2020 – today
- 2023
- [c3]H. Takahashi, Y. Okamoto, Toshiki Hamada, Yusuke Komura, S. Watanabe, K. Tsuda, H. Sawai, Takanori Matsuzaki, Yoshinori Ando, Tatsuya Onuki, Hitoshi Kunitake
, Shunpei Yamazaki, D. Kobayashi, A. Ikuta, Takahiro Makino, Takeshi Ohshima:
Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory. IRPS 2023: 1-6 - 2022
- [c2]K. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, Takaho Tanigawa, Shoji Ikeda
, Takamitsu Shinada, Hiroki Koike, Tetsuo Endoh, T. Makino, Takeshi Ohshima:
Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability. IRPS 2022: 54-1 - 2021
- [j3]Yuta Masuyama
, Katsumi Suzuki, Akira Hekizono, Mitsuyasu Iwanami, Mutsuko Hatano, Takayuki Iwasaki, Takeshi Ohshima
:
Gradiometer Using Separated Diamond Quantum Magnetometers. Sensors 21(3): 977 (2021)
2010 – 2019
- 2018
- [j2]Hajime Sasaki
, Takayuki Hisaka, Kaoru Kadoiwa, Tomoki Oku, Shinobu Onoda, Takeshi Ohshima, Eiji Taguchi, Hidehiro Yasuda:
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. Microelectron. Reliab. 81: 312-319 (2018) - [c1]Masataka Higashiwaki
, Man Hoi Wong, Takafumi Kamimura, Yoshiaki Nakata, Chia-Hung Lin, Ravikiran Lingaparthi, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Naoki Hatta, Kuniaki Yagi, Ken Goto, Kohei Sasaki, Shinya Watanabe, Akito Kuramata, Shigenobu Yamakoshi, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai:
Recent Advances in Ga2O3 MOSFET Technologies. DRC 2018: 1 - 2014
- [j1]Hiroshi Okada
, Yuki Okada, Hiroto Sekiguchi, Akihiro Wakahara, Shin-ichiro Sato, Takeshi Ohshima
:
Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence. IEICE Trans. Electron. 97-C(5): 409-412 (2014)
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