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ORCIDDongwoo Kim 0005
Person information
- affiliation: POSTECH, Power Analog Electronics & Semiconductor Devices Lab, Pohang, Republic of Korea
Other persons with the same name
- Dongwoo Kim (aka: Dong-Woo Kim, Dong Woo Kim) — disambiguation page
- Dongwoo Kim 0001
![[0000-0001-5541-5738]](https://dblp.dagstuhl.de/img/orcid-mark.12x12.png "0000-0001-5541-5738")
— Hanyang University, ERICA, Department of Electronics and Communication Engineering, Ansan, South Korea (and 1 more) - Dongwoo Kim 0002 (aka: Dong Woo Kim 0002) — POSTECH, Pohang, South Korea (and 2 more)
- Dongwoo Kim 0003 — Western Digital Technologies Inc., Milpitas, CA, USA (and 1 more)
- Dongwoo Kim 0004 — Chungnam National University, Daejeon, South Korea
- Dongwoo Kim 0006 — Microsoft
- Dongwoo Kim 0007 — Korea Advanced Institute of Science and Technology, School of Digital Humanities and Computational Social Sciences, Daejeon, South Korea (and 1 more)
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2010 – 2019
- 2017
[j4]Giyoun Roh, Hyeokjin Kim, Cheolgyu Kim, Dongwoo Kim, Bongkoo Kang:
Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instability. Microelectron. Reliab. 72: 98-102 (2017)- 2012
- [j3]Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. Microelectron. Reliab. 52(9-10): 1901-1904 (2012) - [j2]Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N.-H. Lee, Gang-Jun Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1905-1908 (2012) - [j1]Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1949-1952 (2012)
Coauthor Index
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