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Sang-Won Shim
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2020 – today
- 2021
- [c5]Jiho Cho, D. Chris Kang, Jongyeol Park, Sangwan Nam, Jung-Ho Song, Bong-Kil Jung, Jaedoeg Lyu, Hogil Lee, Won-Tae Kim, Hongsoo Jeon, Sunghoon Kim, In-Mo Kim, Jae-Ick Son, Kyoungtae Kang, Sang-Won Shim, JongChul Park, Eungsuk Lee, Kyung-Min Kang, Sang-Won Park, Jaeyun Lee, Seung Hyun Moon, Pansuk Kwak, Byunghoon Jeong, Cheon An Lee, Kisung Kim, Junyoung Ko, Tae-Hong Kwon, Junha Lee, Yohan Lee, Chaehoon Kim, Myeong-Woo Lee, Jeong-Yun Yun, HoJun Lee, Yonghyuk Choi, Sanggi Hong, Jonghoon Park, Yoonsung Shin, Hojoon Kim, Hansol Kim, Chiweon Yoon, Dae-Seok Byeon, Seungjae Lee, Jin-Yub Lee, Jai Hyuk Song:
A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. ISSCC 2021: 426-428 - 2020
- [c4]Sang-Won Shim, Hong Z. Tan:
palmScape: Calm and Pleasant Vibrotactile Signals. HCI (20) 2020: 532-548
2010 – 2019
- 2016
- [j2]Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Jeong-Don Ihm, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Moosung Kim, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. IEEE J. Solid State Circuits 51(1): 204-212 (2016) - 2015
- [j1]Ki-Tae Park, Sangwan Nam, Dae-Han Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Myung-Hoon Choi, Dong-Hun Kwak, Doo-Hyun Kim, Minsu Kim, Hyun Wook Park, Sang-Won Shim, Kyung-Min Kang, Sang-Won Park, Kangbin Lee, Hyun-Jun Yoon, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dae-Seok Byeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Jeong-Hyuk Choi, Kinam Kim:
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming. IEEE J. Solid State Circuits 50(1): 204-213 (2015) - [c3]Jae-Woo Im, Woopyo Jeong, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Sung-Ho Choi, Jeong-Don Ihm, Young-Sun Min, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Ohsuk Kwon, Ji-Sang Lee, Moosung Kim, Sang-Hyun Joo, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. ISSCC 2015: 1-3 - 2014
- [c2]Ki-Tae Park, Jin-Man Han, Dae-Han Kim, Sangwan Nam, Kihwan Choi, Minsu Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Kyung-Min Kang, Myung-Hoon Choi, Dong-Hun Kwak, Hyun Wook Park, Sang-Won Shim, Hyun-Jun Yoon, Doo-Hyun Kim, Sang-Won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jeunghwan Park, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dongkyu Youn, Won-Tae Kim, Taehyun Kim, Sung-Jun Kim, Sungwhan Seo, Hyunggon Kim, Dae-Seok Byeon, Hyang-Ja Yang, Moosung Kim, Myong-Seok Kim, Jinseon Yeon, Jae-hoon Jang, Han-Soo Kim, Woonkyung Lee, Duheon Song, Sungsoo Lee, Kyehyun Kyung, Jeong-Hyuk Choi:
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. ISSCC 2014: 334-335 - 2012
- [c1]Seung-Hwan Shin, Dong-Kyo Shim, Jaeyong Jeong, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, Tae-Young Kim, Hyun Wook Park, Hyun-Jun Yoon, Youngsun Song, Yoon-Hee Choi, Sang-Won Shim, Yang-Lo Ahn, Ki-Tae Park, Jin-Man Han, Kyehyun Kyung, Young-Hyun Jun:
A new 3-bit programming algorithm using SLC-to-TLC migration for 8MB/s high performance TLC NAND flash memory. VLSIC 2012: 132-133
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