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Masaki Fujiu
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2020 – today
- 2023
- [c2]Mario Sako, T. Nakajima, Fumihiro Kono, T. Nakano, Masaki Fujiu, Junji Musha, Dai Nakamura, Naoaki Kanagawa, Y. Shimizu, Kosuke Yanagidaira, Tetsuaki Utsumi, T. Kawano, Yoshikazu Hosomura, Hiroki Yabe, M. Kano, Hiroshi Sugawara, A. H. Sravan, K. Hayashi, Toshiyuki Kouchi, Y. Watanabe:
A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput. VLSI Technology and Circuits 2023: 1-2
2010 – 2019
- 2016
- [j3]Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kono, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita:
A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology. IEEE J. Solid State Circuits 51(1): 196-203 (2016) - 2015
- [c1]Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kouno, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita:
7.1 A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology. ISSCC 2015: 1-3
2000 – 2009
- 2008
- [j2]Noboru Shibata, Hiroshi Maejima, Katsuaki Isobe, Kiyoaki Iwasa, Michio Nakagawa, Masaki Fujiu, Takahiro Shimizu, Mitsuaki Honma, Satoru Hoshi, Toshimasa Kawaai, Kazunori Kanebako, Susumu Yoshikawa, Hideyuki Tabata, Atsushi Inoue, Toshiyuki Takahashi, Toshifumi Shano, Yukio Komatsu, Katsushi Nagaba, Mitsuhiko Kosakai, Noriaki Motohashi, Kazuhisa Kanazawa, Kenichi Imamiya, Hiroto Nakai, Menahem Lasser, Mark Murin, Avraham Meir, Arik Eyal, Mark Shlick:
A 70 nm 16 Gb 16-Level-Cell NAND flash Memory. IEEE J. Solid State Circuits 43(4): 929-937 (2008) - 2006
- [j1]Takahiko Hara, Koichi Fukuda, Kazuhisa Kanazawa, Noboru Shibata, Koji Hosono, Hiroshi Maejima, Michio Nakagawa, Takumi Abe, Masatsugu Kojima, Masaki Fujiu, Yoshiaki Takeuchi, Kazumi Amemiya, Midori Morooka, Teruhiko Kamei, Hiroaki Nasu, Chi-Ming Wang, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Tohru Maruyama, Susumu Yoshikawa, Masaaki Higashitani, Tuan D. Pham, Yupin Fong, Toshiharu Watanabe:
A 146-mm2 8-gb multi-level NAND flash memory with 70-nm CMOS technology. IEEE J. Solid State Circuits 41(1): 161-169 (2006)
Coauthor Index
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