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2020 – today
- 2022
[j14]Tae-Hyun Kim
, Byungkyu Song, In Jun Jung, Seong-Ook Jung:
A Sneak Current Compensation Scheme With Offset Cancellation Sensing Circuit for ReRAM-Based Cross-Point Memory Array. IEEE Trans. Circuits Syst. I Regul. Pap. 69(4): 1583-1594 (2022)- [c4]Dae-Hyun Kim, Byungkyu Song, Hyun-A. Ahn, Woongjoon Ko, Sung-Geun Do, Seokjin Cho, Kihan Kim, Seung-Hoon Oh, Hye-Yoon Joo, Geuntae Park, Jin-Hun Jang, Yong-Hun Kim, Donghun Lee, Jaehoon Jung, Yongmin Kwon, Youngjae Kim, Jaewoo Jung, Seongil O, Seoulmin Lee, Jaeseong Lim, Junho Son, Jisu Min, Haebin Do, Jaejun Yoon, Isak Hwang, Jinsol Park, Hong Shim, Seryeong Yoon, Dongyeong Choi, Jihoon Lee, Soohan Woo, Eunki Hong, Junha Choi, Jae-Sung Kim, Sangkeun Han, Jong-Min Bang, Bokgue Park, Jang-Hoo Kim, Seouk-Kyu Choi, Gong-Heum Han, Yoo-Chang Sung, Wonil Bae, Jeong-Don Lim, Seungjae Lee, Changsik Yoo, Sang Joon Hwang, Jooyoung Lee:
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process. ISSCC 2022: 448-450 - 2021
- [j13]Sara Choi, Hong Keun Ahn, Byungkyu Song, Seung-Hyuk Kang, Seong-Ook Jung:
Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction. IEEE Trans. Circuits Syst. I Regul. Pap. 68(6): 2481-2493 (2021) - [j12]Suk Min Kim, Byungkyu Song, Seong-Ook Jung:
Imbalance-Tolerant Bit-Line Sense Amplifier for Dummy-Less Open Bit-Line Scheme in DRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 68(6): 2546-2554 (2021) - [j11]Byungkyu Song, Sehee Lim, Seung-Hyuk Kang, Seong-Ook Jung:
Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique. IEEE Trans. Inf. Forensics Secur. 16: 2843-2853 (2021) - 2020
- [j10]Sehee Lim, Byungkyu Song, Seong-Ook Jung:
Highly Independent MTJ-Based PUF System Using Diode-Connected Transistor and Two-Step Postprocessing for Improved Response Stability. IEEE Trans. Inf. Forensics Secur. 15: 2798-2807 (2020)
2010 – 2019
- 2019
- [j9]Byungkyu Song, Sara Choi, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Cancellation Sensing-Circuit-Based Nonvolatile Flip-Flop Operating in Near-Threshold Voltage Region. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(8): 2963-2972 (2019) - [j8]Sara Choi, Hong Keun Ahn, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Decoder for Short BCH Codes With High Decoding Efficiency and Low Power for Emerging Memories. IEEE Trans. Very Large Scale Integr. Syst. 27(2): 387-397 (2019) - [j7]Suk Min Kim, Byungkyu Song, Seong-Ook Jung:
Sensing Margin Enhancement Technique Utilizing Boosted Reference Voltage for Low-Voltage and High-Density DRAM. IEEE Trans. Very Large Scale Integr. Syst. 27(10): 2413-2422 (2019) - [j6]Taehui Na, Byungkyu Song, Sara Choi, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. IEEE Trans. Very Large Scale Integr. Syst. 27(11): 2548-2555 (2019) - 2018
- [j5]Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 65-I(1): 163-174 (2018) - [c3]Suk Min Kim, Byungkyu Song, Tae Woo Oh, Seong-Ook Jung:
Analysis on Sensing Yield of Voltage Latched Sense Amplifier for Low Power DRAM. PRIME 2018: 65-68 - 2017
- [j4]Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. IEEE J. Solid State Circuits 52(2): 496-504 (2017) - [j3]Byungkyu Song, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. IEEE Trans. Circuits Syst. II Express Briefs 64-II(6): 700-704 (2017) - 2016
- [j2]Taehui Na, Jisu Kim, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1361-1370 (2016) - [c2]Beomsang Yoo, Taehui Na, Byungkyu Song, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Equalization scheme analysis for high-density spin transfer torque random access memory. ISOCC 2016: 99-100 - 2015
- [j1]Byungkyu Song, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(7): 1776-1784 (2015) - [c1]Byungkyu Song, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. ISLPED 2015: 365-370
Coauthor Index
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