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ORCIDWataru Saito
This is just a disambiguation page, and is not intended to be the bibliography of an actual person. Any publication listed on this page has not been assigned to an actual author yet. If you know the true author of one of the publications listed below, you are welcome to contact us.
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2020 – today
- 2025
[j11]Yoichi Iizuka
, Akihide Maezono, Wataru Saito, Kazuhiko Takami, Fukashi Morishita:
A Low Noise 8.3-Mpixel CMOS Image Sensor With Selectable Multiple Sampling Technique by 5.36 GHz Global Counter and Dual Latch Skew Canceler. IEEE Trans. Circuits Syst. I Regul. Pap. 72(3): 1105-1113 (2025)- 2024
- [j10]Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shinichi Nishizawa, Wataru Saito:
Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN). IEEE Access 12: 96936-96945 (2024) - 2023
- [j9]Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shinichi Nishizawa, Wataru Saito:
IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control. IEEE Access 11: 6632-6640 (2023) - [c7]Yoichi Iizuka, Akihide Maezono, Wataru Saito, Atsushi Yamane, Kazuhiko Takami, Fukashi Morishita:
A Low Noise 8Mpixel CMOS Image Sensor with 5.36GHz Global Counter and Dual Latch Skew Canceler for Surveillance AI Camera System. A-SSCC 2023: 1-3 - 2022
- [j8]Fukashi Morishita, Wataru Saito, Norihito Kato, Yoichi Iizuka, Masao Ito:
High Accuracy Test Techniques with Fine Pattern Generator and Ramp Test Circuit for CMOS Image Sensor. IEICE Trans. Electron. 105-C(7): 316-323 (2022) - [j7]Fukashi Morishita, Wataru Saito, Yoichi Iizuka, Norihito Kato, Ryota Otake, Masao Ito:
A 30.2-µ Vrms Horizontal Streak Noise 8.3-Mpixel 60-Frames/s CMOS Image Sensor With Skew-Relaxation ADC and On-Chip Testable Ramp Generator for Surveillance Camera. IEEE J. Solid State Circuits 57(10): 3103-3113 (2022) - [c6]Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt V. Smith, Wataru Saito, Yuhao Zhang:
GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery. IRPS 2022: 10 - [c5]Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang:
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses. IRPS 2022: 22-1 - 2021
- [c4]Wataru Saito, Yoichi Iizuka, Norihito Kato, Ryota Otake, Fukashi Morishita:
A Low Noise and Linearity Improvement CMOS Image Sensor for Surveillance Camera with Skew-Relaxation Local Multiply Circuit and On-Chip Testable Ramp Generator. A-SSCC 2021: 1-3 - 2020
- [c3]Fukashi Morishita, Masanori Otsuka, Wataru Saito:
An ADC Test Technique With Dual-Path/Multi-Functional Fine Pattern Generator Realizing High Accuracy Measurement for CMOS Image Sensor. ATS 2020: 1-6
2010 – 2019
- 2019
- [c2]Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa:
Switching of 3300V Scaled IGBT by 5V Gate Drive. ASICON 2019: 1-3 - 2017
- [j6]Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications. IEICE Trans. Electron. 100-C(3): 321-328 (2017) - [j5]Wataru Saito, Toshiyuki Naka:
Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs. Microelectron. Reliab. 76-77: 309-313 (2017) - [c1]Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, Hiromichi Ohashi, Hiroshi Iwai:
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). ASICON 2017: 1137-1140 - 2016
- [j4]Wataru Saito, Toshiyuki Naka:
UIS test of high-voltage GaN-HEMTs with p-type gate structure. Microelectron. Reliab. 64: 552-555 (2016) - 2015
- [j3]Li Zhang, Mitsuo Koike, Mizuki Ono, Shogo Itai, Kazuya Matsuzawa, Syotaro Ono, Wataru Saito, Masakazu Yamaguchi, Yohei Hayase, Keiryo Hara:
Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications. Microelectron. Reliab. 55(9-10): 1559-1563 (2015) - [j2]Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka, Taichi Kobayashi:
Breakdown behaviour of high-voltage GaN-HEMTs. Microelectron. Reliab. 55(9-10): 1682-1686 (2015) - [j1]Takashi Setoya, Tsuneo Ogura, Wataru Saito, Tomoko Matsudai, Koichi Endo:
Destruction failure analysis and international reliability test standard for power devices. Microelectron. Reliab. 55(9-10): 1932-1937 (2015)
Coauthor Index
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