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L. De Schepper

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2020 – today

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2024
[c3]
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  - conf/irps/AvramenkoSCGMMSM24
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M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini:
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. IRPS 2024: 54
2023
[c2]
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Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij:
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. IRPS 2023: 1-5

2010 – 2019

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2015
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Peter Moens, Abhishek Banerjee, P. Coppens, Aurore Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack:
Technology and design of GaN power devices. ESSDERC 2015: 64-67

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