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ORCIDAbhinav Kranti
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2020 – today
- 2024
[j3]Nivedita Rai
, Sandeep Semwal, Rohit Kumar Nirala, Abhinav Kranti:
Pragmatic Evaluation of Process Corners in ULP Subthreshold Circuits With Quantum Confinement Effects in Junctionless Nanowire Transistor. IEEE Trans. Circuits Syst. I Regul. Pap. 71(1): 237-248 (2024)
2010 – 2019
- 2019
- [c9]Manish Gupta, Abhinav Kranti:
Optimization of Multiple Physical Phenomena through a Universal Metric in Junctionless Transistors. VLSID 2019: 168-173 - 2018
- [c8]Manish Gupta, Abhinav Kranti:
Hysteresis Free sub-60 mV/dec Subthreshold Swing in Junctionless MOSFETs. VLSID 2018: 133-138 - [c7]Md. Hasan Raza Ansari, Nupur Navlakha, Jyi-Tsong Lin, Abhinav Kranti:
Emerging FETs for Low Power and High Speed Embedded Dynamic Random Access Memory. VLSID 2018: 422-427 - 2017
- [c6]Y. V. Bhuvaneshwari, Abhinav Kranti:
Extraction and Analysis of Mobility in Double Gate Junctionless Transistor. VLSID 2017: 283-288 - [c5]Manish Gupta, Abhinav Kranti:
Suppressing Single Transistor Latch Effect in Energy Efficient Steep Switching Junctionless MOSFETs. VLSID 2017: 441-446 - 2015
- [c4]Mukta Singh Parihar, Fanyu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu:
Back-gate effects and detailed characterization of junctionless transistor. ESSDERC 2015: 282-285 - 2014
- [c3]Mukta Singh Parihar, Abhinav Kranti:
Volume accumulated double gate junctionless MOSFETs for low power logic technology applications. ISQED 2014: 335-340 - [c2]Mukta Singh Parihar, Abhinav Kranti:
Performance Optimization and Parameter Sensitivity Analysis of Ultra Low Power Junctionless MOSFETs. VLSID 2014: 439-443 - 2011
- [j2]Ran Yan, Abhinav Kranti, Isabelle Ferain, Chi-Woo Lee, Ran Yu, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge:
Investigation of high-performance sub-50 nm junctionless nanowire transistors. Microelectron. Reliab. 51(7): 1166-1171 (2011) - 2010
- [j1]Abhinav Kranti, G. Alastair Armstrong:
Nonclassical Channel Design in MOSFETs for Improving OTA Gain-Bandwidth Trade-Off. IEEE Trans. Circuits Syst. I Regul. Pap. 57-I(12): 3048-3054 (2010)
2000 – 2009
- 2009
- [c1]Abhinav Kranti, G. Alastair Armstrong:
Improving Operational transconductance Amplifier (OTA) gain-bandwidth tradeoff using gate-underlap MOSFETs. SoCC 2009: 107-110
Coauthor Index
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