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Sang-Sun Kim

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2010 – 2019

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2019
[j1]
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Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Min-Su Ahn, Yong-Hun Kim, Yong Jae Lee, Dong-Seok Kang, Sung-Geun Do, Chang-Yong Lee, Gun-hee Cho, Jae-Koo Park, Jae-Sung Kim, Kyung-Bae Park, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Hyun-Soo Park, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Yong-Jun Kim, Young-Hun Seo, Chang-Ho Shin, ChanYong Lee, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byung-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking. IEEE J. Solid State Circuits 54(1): 197-209 (2019)
2018
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Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Yoon-Joo Eom, Young-Sik Kim, Min-Su Ahn, Yong-Hun Kim, Sang-Hoon Jung, Sung-Geun Do, Chang-Yong Lee, Jae-Sung Kim, Dong-Seok Kang, Kyung-Bae Park, Jung-Bum Shin, Jong-Ho Lee, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ji-Suk Kwon, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Min-Woo Won, Gun-hee Cho, Hyun-Soo Park, Hyung-Kyu Kim, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Jae-Koo Park, Yong Jae Lee, Yong-Jun Kim, Young-Hun Seo, Beob-Rae Cho, Chang-Ho Shin, ChanYong Lee, YoungSeok Lee, Yoon-Gue Song, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byeong-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking. ISSCC 2018: 204-206
2017
[c1]
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Hye-Jung Kwon, Eunsung Seo, ChangYong Lee, Young-Hun Seo, Gong-Heum Han, Hye-Ran Kim, Jong-Ho Lee, Min-Su Jang, Sung-Geun Do, Seung-Hyun Cho, Jae-Koo Park, Su-Yeon Doo, Jung-Bum Shin, Sang-Hoon Jung, Hyoung-Ju Kim, In-Ho Im, Beob-Rae Cho, Jaewoong Lee, Jae-Youl Lee, Ki-Hun Yu, Hyung-Kyu Kim, Chul-Hee Jeon, Hyun-Soo Park, Sang-Sun Kim, Seok-Ho Lee, Jong-Wook Park, Seung-Sub Lee, Bo-Tak Lim, Jun-Young Park, Yoon-Sik Park, Hyuk-Jun Kwon, Seung-Jun Bae, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices. ISSCC 2017: 394-395

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