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Journal Articles
- 2024
[j9]Peijian Zhang, Kunfeng Zhu, Wensuo Chen
:
A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier. IEICE Trans. Electron. 107(1): 12-17 (2024)- [j8]Zhigang Shen, Wensuo Chen:
Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar. Microelectron. J. 144: 106074 (2024) - [j7]Qisheng Yu, Zhengyuan Zhang, Aohang Zhang, Jiaweiwen Huang, Wensuo Chen:
Comprehensive experimental study on Schottky contact super barrier rectifier. Microelectron. J. 144: 106101 (2024) - [j6]Zhigang Shen, Pengfei Liao, Qisheng Yu, Jiaweiwen Huang, Aohang Zhang, Wensuo Chen:
Design and investigation of double-RESURF SOI-LIGBT with carrier-storage layer in P-top. Microelectron. J. 147: 106177 (2024) - [j5]Yuying Wang, Zhengyuan Zhang, Peng Jian, Pengfei Liao, Aohang Zhang, Kunfeng Zhu, Wensuo Chen:
Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position. Microelectron. J. 147: 106190 (2024) - [j4]Hang Shu, Pengfei Liao, Haiqing Peng, Wensuo Chen:
A transient-enhanced output-capacitorless LDO regulator with non-inverting pull-push gain stage. Microelectron. J. 151: 106299 (2024) - [j3]Jiaweiwen Huang, Wensuo Chen, Shenglei Zhao, Qisheng Yu, Aohang Zhang, Kunfeng Zhu, Jian Li:
Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance. Microelectron. J. 151: 106325 (2024) - 2022
- [j2]Yuying Wang, Aohang Zhang, Peng Jian, Wensuo Chen:
A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels. IEICE Electron. Express 19(16): 20220288 (2022) - 2017
- [j1]Peijian Zhang, Xue Wu, Qianning Yi, Wensuo Chen, Yonghui Yang, Kunfeng Zhu, Kaizhou Tan, Yi Zhong:
A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels. Microelectron. Reliab. 71: 86-90 (2017)
Coauthor Index
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