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Sanjay Kumar Banerjee
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Books and Theses
- 1983
- [b1]Sanjay Kumar Banerjee:
Experimental Studies of Laterally Seeded Recrystallized Polysilicon on Silicon Dioxide. University of Illinois Urbana-Champaign, USA, 1983
Journal Articles
- 2021
- [j2]Urmimala Roy, Tanmoy Pramanik, Subhendu Roy, Avhishek Chatterjee, Leonard F. Register, Sanjay Kumar Banerjee:
Machine Learning for Statistical Modeling: The Case of Perpendicular Spin-Transfer-Torque Random Access Memory. ACM Trans. Design Autom. Electr. Syst. 26(3): 24:1-24:17 (2021) - 2010
- [j1]Sanjay Kumar Banerjee, Leonard Franklin Register, Emanuel Tutuc, Dipanjan Basu, Seyoung Kim, Dharmendar Reddy, Allan H. MacDonald:
Graphene for CMOS and Beyond CMOS Applications. Proc. IEEE 98(12): 2032-2046 (2010)
Conference and Workshop Papers
- 2024
- [c7]Nilesh Pandey, Yogesh S. Chauhan, Leonard F. Register, Sanjay Kumar Banerjee:
Impact of Multi-Domain on Ferroelectric Tunnel Junction Design Metrics. DRC 2024: 1-2 - [c6]Nilesh Pandey, Yogesh S. Chauhan, Leonard F. Register, Sanjay Kumar Banerjee:
Impact of Multi-Domain Microscopic Interactions on Magnetic Tunnel Junction's Static and Transient Characteristics. DRC 2024: 1-2 - 2022
- [c5]S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay Kumar Banerjee:
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices. DRC 2022: 1-2 - [c4]Sung Jin Yang, Frank Makal, Paul Peterson, Jason Alikpala, Christopher J. Luth, Sanjay Kumar Banerjee, Andreas Roessler, Deji Akinwande:
D-band frequency memristor switch based on monolayer boron nitride. DRC 2022: 1-2 - 2019
- [c3]Jacob N. Rohan, Pingping Zhuang, S. S. Teja Nibhanupudi, Sanjay Kumar Banerjee, Jaydeep P. Kulkarni:
Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D $h$-BN based RRAM devices. DRC 2019: 103-104 - [c2]Omar B. Mohammed, Leonard F. Register, Sanjay Kumar Banerjee:
Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors. DRC 2019: 129-130 - 2017
- [c1]Atresh Sanne, Saungeun Park, Rudresh Ghosh, Maruthi N. Yogeesh, Chison Liu, Deji Akinwande, Sanjay Kumar Banerjee, Leo Mathew, Rajesh Rao:
Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets. ISCAS 2017: 1-4
Coauthor Index
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