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2020 – today
- 2024
[c12]S. Ghosh, A. Kruv, Quentin Smets, Tom Schram, D. J. Leech, T. Ding, V. Turkani, Benjamin Groven, A. Dangel, G. Probst, Thomas Uhrmann, Markus Wimplinger, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Steven Brems, Gouri Sankar Kar:
EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration. VLSI Technology and Circuits 2024: 1-2- 2023
- [c11]L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev:
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. IRPS 2023: 1-6 - [c10]Devin Verreck, Piet Wambacq, Maarten Van De Put, Zubair Ahmed, Quentin Smets, Aryan Afzalian, Rutger Duflou, Xiangyu Wu, Gioele Mirabelli, Rongmei Chen, Inge Asselberghs, Gouri Sankar Kar:
The Promise of 2-D Materials for Scaled Digital and Analog Applications. ISSCC 2023: 394-395 - [c9]Souvik Ghosh
, Quentin Smets, S. Banerjee, Tom Schram, K. Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, Benjamin Groven, H. M. Silva, Shreya Kundu, Daire Cott, Dennis Lin, P. Favia, T. Nuytten, A. Phommahaxay, Inge Asselberghs, C. De La Rosa, Gouri Sankar Kar, Steven Brems:
Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer. VLSI Technology and Circuits 2023: 1-2 - [c8]Shreya Kundu, D. H. van Doip, Tom Schram, Quentin Smets, S. Banerjee, Benjamin Groven, Daire Cott, Stefan Decoster, P. Bezard, F. Lazzarino, K. Banerjee, Souvik Ghosh, J. F. de Mamelfe, Pierre Morin, Cesar J. Lockhart de la Rosa, Inge Asselberghs, Gouri Sankar Kar:
Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c7]L. Panarella, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, I. Asselberghs, Ben Kaczer:
Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. DRC 2022: 1-2 - [i1]Fanfan Meng, Florin Ciubotaru, S.-Y. Lee, Odysseas Zografos, M. Gupta, V. D. Nguyen, Sebastien Couet, Gouri Sankar Kar, Giovanni De Micheli, Christoph Adelmann, I. Asselberghs:
Challenges and targets of MRAM-enabled scaled spintronic logic circuits. CoRR abs/2209.01999 (2022) - 2021
- [c6]Dennis Lin, Xiangyu Wu, Vivek Mootheri, Daire Cott, Benjamin Groven, Pierre Morin, Inge Asselberghs, Iuliana P. Radu:
On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. DRC 2021: 1-2
2010 – 2019
- 2019
- [c5]Yashwanth Balaji, Quentin Smets, Dennis Lin, I. Asselberghs, Iuliana P. Radu, Guido Groeseneken:
Tunnel FETs using Phosphorene/ReS2 heterostructures. DRC 2019: 113-114 - [c4]Chiara Alessandri, Inge Asselberghs, Peter De Heyn, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout, Dries Van Thourhout, Marianna Pantouvaki:
4-Channel C-Band WDM Transmitter Based on 10 GHz Graphene-Silicon Electro-Absorption Modulators. OFC 2019: 1-3 - 2018
- [c3]Chiara Alessandri, Inge Asselberghs, Yoojin Ban, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout, Dries Van Thourhout, Marianna Pantouvaki:
Broadband 20 Gbit/s Graphene-Si Electro-Absorption Modulator. ECOC 2018: 1-3 - 2017
- [c2]Tom Schram, Quentin Smets, Benjamin Groven, M. H. Heyne, E. Kunnen, A. Thiam, Katia Devriendt, Annelies Delabie, Dennis Lin, M. Lux, Daniele Chiappe, I. Asselberghs, S. Brus, Cedric Huyghebaert, S. Sayan, A. Juncker, Matty Caymax, Iuliana P. Radu:
WS2 transistors on 300 mm wafers with BEOL compatibility. ESSDERC 2017: 212-215 - 2015
- [c1]Dries Van Thourhout, Yingtao Hu, Marianna Pantouvaki, Koen Alexander, Bart Kuyken, Steven Brems, Inge Asselberghs, Cedric Huyghebaert, Chiara Alessandri, Philippe Absil, Joris Van Campenhout:
Hybrid graphene-silicon photonics devices. ECOC 2015: 1-3
Coauthor Index
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