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Hossein Ghasemian
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2020 – today
- 2023
- [j8]Ayoub Sadeghi
, Razieh Ghasemi, Hossein Ghasemian
, Nabiollah Shiri
:
High Efficient GDI-CNTFET-Based Approximate Full Adder for Next Generation of Computer Architectures. IEEE Embed. Syst. Lett. 15(1): 33-36 (2023) - [j7]Ayoub Sadeghi
, Razieh Ghasemi, Hossein Ghasemian
, Nabiollah Shiri:
Efficient and optimized approximate GDI full adders based on dynamic threshold CNTFETs for specific least significant bits. Frontiers Inf. Technol. Electron. Eng. 24(4): 599-616 (2023) - 2021
- [j6]Hossein Ghasemian
, Saeed Karami, Ebrahim Abiri, Mohammad Reza Salehi:
Design of a Low Power Analog and Multi-shaped Fully Programmable Twin-Cell Membership Function Generator Circuit in 65 nm CMOS Technology. Circuits Syst. Signal Process. 40(1): 2-21 (2021) - [j5]Hossein Ghasemian
, Amin Bahrami, Ebrahim Abiri, Mohammad Reza Salehi:
A New Low-Power Charge Pump with a Glitch-Free PFD for Speedup the Acquisition Process of a PLL in 65 nm CMOS Technology. Circuits Syst. Signal Process. 40(6): 2982-3006 (2021) - 2020
- [j4]Hossein Ghasemian, Amirhossein Ahmadi, Ebrahim Abiri, Mohammad Reza Salehi:
An implementation of a new 11-bit 1.2 GS/s hybrid DAC with a noval 3-bit Sub-DAC. Microelectron. J. 103: 104872 (2020)
2010 – 2019
- 2019
- [j3]Hossein Ghasemian, Razieh Ghasemi, Ebrahim Abiri, Mohammad Reza Salehi:
A novel high-speed low-power dynamic comparator with complementary differential input in 65 nm CMOS technology. Microelectron. J. 92 (2019) - 2018
- [j2]Mohammad Reza Nikbakhsh, Ebrahim Abiri, Hossein Ghasemian, Mohammad Reza Salehi:
Two-stage current-reused variable-gain low-noise amplifier for X-band receivers in 65 nm complementary metal oxide semiconductor technology. IET Circuits Devices Syst. 12(5): 630-637 (2018) - [j1]Mohammad Reza Nikbakhsh, Ebrahim Abiri, Hossein Ghasemian, Mohammad Reza Salehi:
A Two Stage Variable-Gain Low-Noise Amplifier for X-Band in 0.18 µm CMOS. Wirel. Pers. Commun. 98(1): 173-187 (2018)
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