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Fernando L. Aguirre
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2020 – today
- 2022
- [j3]Kaichen Zhu, Mohammad Reza Mahmoodi, Zahra Fahimi, Yiping Xiao, Tao Wang, Kristýna Bukvisová, Miroslav Kolíbal, Juan Bautista Roldán, David Perez, Fernando L. Aguirre, Mario Lanza:
Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems. Adv. Intell. Syst. 4(8) (2022) - [i1]Aijaz H. Lone, Selma Amara, Fernando L. Aguirre, Mario Lanza, Hossein Fariborzi:
Skyrmion-based Leaky Integrate and Fire Neurons for Neuromorphic Applications. CoRR abs/2205.14913 (2022) - 2021
- [c4]Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, N. Gomez, Enrique Miranda, Jordi Suñé:
Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition. LASCAS 2021: 1-4 - 2020
- [j2]Fernando Leonel Aguirre, Sebastián Matías Pazos, Felix Palumbo, Jordi Suñé, Enrique Miranda:
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition. IEEE Access 8: 202174-202193 (2020)
2010 – 2019
- 2019
- [c3]Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo:
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRPS 2019: 1-8 - 2018
- [j1]Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Fernando Silveira:
Performance-reliability trade-offs in short range RF power amplifier design. Microelectron. Reliab. 88-90: 38-42 (2018) - [c2]Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, Sivan Fadida, Roy Winter, Moshe Eizenberg:
Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks. IRPS 2018: 3-1 - [c1]Andrés Fontana, Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Nahuel Vega, Nahuel A. Müller, Emanuel de la Fourniere, Mario Debray:
Heavy Ion Microbeam Experimental Study of ASET on a Full-Custom CMOS OpAmp. SBCCI 2018: 1-5
Coauthor Index
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