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ORCIDZong Jie Shen
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2020 – today
- 2022
[j1]Zong Jie Shen
, Chun Zhao, Lixing Kang, Yi Sun, Yina Liu, Ivona Z. Mitrovic, Li Yang, Eng Gee Lim, Zhongming Zeng, Cezhou Zhao:
Emerging Optical In-Memory Computing Sensor Synapses Based on Low-Dimensional Nanomaterials for Neuromorphic Networks. Adv. Intell. Syst. 4(9) (2022)- 2021
- [c8]Chun Zhao, Tian Shi Zhao, Zong Jie Shen, Yixin Cao, Yina Liu, Li Yang, Ivona Z. Mitrovic, Eng Gee Lim, Ce Zhou Zhao:
Research on Two-dimensional MXenes Based Synaptic Devices for the Future In-memory Computing. ASICON 2021: 1-4 - [c7]Zong Jie Shen, Chun Zhao, Ivona Z. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang:
Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers. ICICDT 2021: 1-4 - [c6]Zong Jie Shen, Chun Zhao, Ka Lok Man, Yina Liu, Cezhou Zhao:
Long-Term Memory Performance with Learning Behavior of Artificial Synaptic Memristor Based on Stacked Solution-Processed Switching Layers. ISCAS 2021: 1-4 - [c5]Zong Jie Shen, Chun Zhao, Yina Liu, Li Yang, Cezhou Zhao:
Artificial synaptic behavior and its improvement of RRAM device with stacked solution-processed MXene layers. ISOCC 2021: 187-188 - 2020
- [c4]Zong Jie Shen, Chun Zhao, Li Yang, Cezhou Zhao:
Bionic Sypantic Application of OxRRAM Devices. ISOCC 2020: 163-164
2010 – 2019
- 2019
- [c3]Zong Jie Shen, Chun Zhao, C. Z. Zhao, Ivona Z. Mitrovic, Li Yang, Wangying Xu, Eng Gee Lim, T. Luo, Y. B. Huang:
Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures. ICICDT 2019: 1-4 - [c2]Zong Jie Shen, Ce Zhou Zhao, Li Yang, Chun Zhao:
Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures. ISOCC 2019: 182-183 - 2018
- [c1]Chun Zhao, Zong Jie Shen, Guang You Zhou, Ce Zhou Zhao, Li Yang, Ka Lok Man, Eng Gee Lim:
Neuromorphic Properties of Memristor towards Artificial Intelligence. ISOCC 2018: 172-173
Coauthor Index
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