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Anil Kavala
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2020 – today
- 2023
- [c4]Youngmin Jo, Anil Kavala, Tongsung Kim, Byung-Kwan Chun, Jungjune Park, Taesung Lee, Jungmin Seo, Manjae Yang, Taehyeon Park, Hyunjin Kwon, Cheolhui Lee, Younghoon Son, Junghwan Kwak, Younggyu Lee, Hwan-Seok Ku, Dae-Hoon Na, Changyeon Yu, Jonghoon Park, Jae-Hwan Kim, Hyojin Kwon, Chan-ho Kim, Moon-Ki Jung, Chanjin Park, Donghyun Seo, Moosung Kim, Seungjae Lee, Jin-Yub Lee, Dongku Kang, Chiweon Yoon, Sunghoi Hur:
A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package. VLSI Technology and Circuits 2023: 1-2 - 2021
- [j1]Dae-Hoon Na, Jang-Woo Lee, Seon-Kyoo Lee, Hwasuk Cho, Junha Lee, Manjae Yang, Eunjin Song, Anil Kavala, Tongsung Kim, Dong-Su Jang, Youngmin Jo, Ji-Yeon Shin, Byung-Kwan Chun, Tae-Sung Lee, Byunghoon Jeong, Chiweon Yoon, Dongku Kang, Seungjae Lee, Jungdon Ihm, Dae-Seok Byeon, Jinyub Lee, Jai Hyuk Song:
A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage. IEEE J. Solid State Circuits 56(4): 1129-1140 (2021) - [c3]Tongsung Kim, Anil Kavala, Hyunsuk Kang, Youngmin Jo, Jungjune Park, Kyoungtae Kang, Byung-Kwan Chun, Dong-Ho Shin, Dong-Su Jang, Byunghoon Jeong, Chiweon Yoon, Jinyub Lee, Jai Hyuk Song:
A Hybrid ZQ Calibration Design for High-Density Flash Memory Toggle 5.0 High-speed Interface. A-SSCC 2021: 1-2 - 2020
- [c2]Jang-Woo Lee, Dae-Hoon Na, Anil Kavala, Hwasuk Cho, Junha Lee, Manjae Yang, Eunjin Song, Tongsung Kim, Seon-Kyoo Lee, Dong-Su Jang, Byung-Kwan Chun, Youngmin Jo, Sunwon Jung, Doo-Il Jung, Chan-ho Kim, Daewoon Kang, Tae-Sung Lee, Byunghoon Jeong, Chiweon Yoon, Dongku Kang, Seungjae Lee, Jungdon Ihm, Dae-Seok Byeon, Jin-Yup Lee, Sangjoon Hwang, Jai Hyuk Song:
A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [c1]Dongku Kang, Minsu Kim, Suchang Jeon, Wontaeck Jung, Jooyong Park, Gyo Soo Choo, Dong-Kyo Shim, Anil Kavala, Seungbum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun Wook Park, ByungJun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyun-Jin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Young-Sun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-Ghee Hahn, Ki-Sung Kim, Kyungmin Kim, Euisang Yoon, Wontae Kim, Inryul Lee, Seunghyun Moon, Jeong-Don Ihm, Dae-Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kyehyun Kyung:
A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. ISSCC 2019: 216-218
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