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ORCIDAlessandro Bricalli
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2020 – today
- 2024
[j4]Bastien Giraud
, Sebastien Ricavy, Cyrille Laffond, Ilan Sever, Valentin Gherman, Florent Lepin, Mariam Diallo, Khadija Zenati, Sylvain Dumas, Olivier Guille, Maxim Vershkov, Alessandro Bricalli, Giuseppe Piccolboni, Jean-Philippe Noel, Anass Samir, Gaël Pillonnet, Yvain Thonnart, Gabriel Molas:
Smart Write Algorithm to Enhance Performances and Reliability of an RRAM Macro. IEEE J. Solid State Circuits 59(9): 3045-3057 (2024)- [j3]Henriette Padberg, Amir Regev, Giuseppe Piccolboni, Alessandro Bricalli, Gabriel Molas, Jean-Francois Nodin, Shahar Kvatinsky:
Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors. IEEE Trans. Circuits Syst. II Express Briefs 71(1): 395-399 (2024) - 2023
- [j2]Sandeep Kaur Kingra, Vivek Parmar, Deepak Verma, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, Amir Regev, Manan Suri:
Fully Binarized, Parallel, RRAM-Based Computing Primitive for In-Memory Similarity Search. IEEE Trans. Circuits Syst. II Express Briefs 70(1): 46-50 (2023) - [c11]Bastien Giraud, Sebastien Ricavy, Yasser Moursy, Cyrille Laffond, Ilan Sever, Valentin Gherman, Manuel Pezzin, Florent Lepin, Mariam Diallo, Khadija Zenati, Sylvain Dumas, Maxim Vershkov, Alessandro Bricalli, Giuseppe Piccolboni, Jean-Philippe Noël, Anass Samir, Gaël Pillonnet, Yvain Thonnart, Gabriel Molas:
Benefits of Design Assist Techniques on Performances and Reliability of a RRAM Macro. IMW 2023: 1-4 - [c10]Vivek Parmar, Sandeep Kaur Kingra, Deepak Verma, Digamber Pandey, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Pares, Laurent Grenouillet, Jean-François Nodin, Manan Suri:
Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array. IMW 2023: 1-4 - [c9]Lucas Reganaz, Damien Deleruyelle, Quentin Rafhay, Joel Minguet Lopez, Niccolo Castellani, Jean-François Nodin, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, François Andrieu:
Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. IRPS 2023: 1-6 - [i5]Henriette Padberg, Amir Regev, Giuseppe Piccolboni, Alessandro Bricalli, Gabriel Molas, Jean-François Nodin, Shahar Kvatinsky:
Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors. CoRR abs/2310.16843 (2023) - 2022
- [c8]Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle, Quentin Rafhay, Niccolo Castellani, Lucas Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, Valentina Meli, S. Martin, François Andrieu, Laurent Grenouillet:
High temperature stability embedded ReRAM for 2x nm node and beyond. IMW 2022: 1-4 - [i4]Sandeep Kaur Kingra, Vivek Parmar, Deepak Verma, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, Amir Regev, Manan Suri:
Fully-Binarized, Parallel, RRAM-based Computing Primitive for In-Memory Similarity Search. CoRR abs/2208.02651 (2022) - 2021
- [c7]Wolfgang Goes, D. Green, Philippe Blaise, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Molas, Jean-Francois Nodin:
A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification. IMW 2021: 1-4 - 2020
- [j1]Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
In-Memory Eigenvector Computation in Time O (1). Adv. Intell. Syst. 2(8): 2000042 (2020) - [c6]Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices. AICAS 2020: 26-30 - [c5]Amir Regev, Alessandro Bricalli, Giuseppe Piccolboni, Alexandre Valentian, Thomas Mesquida, Gabriel Molas, Jean-François Nodin:
Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device. AICAS 2020: 145-148 - [i3]Zhong Sun, Giacomo Pedretti, Alessandro Bricalli, Daniele Ielmini:
One-step regression and classification with crosspoint resistive memory arrays. CoRR abs/2005.01988 (2020) - [i2]Zhong Sun, Giacomo Pedretti, Piergiulio Mannocci, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
Time complexity of in-memory solution of linear systems. CoRR abs/2005.04530 (2020) - [i1]Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
In-memory eigenvector computation in time O(1). CoRR abs/2005.04531 (2020)
2010 – 2019
- 2019
- [b1]Alessandro Bricalli:
Fabrication and characterization of resistive switching memory devices for high-density storage and in-memory computing. Polytechnic University of Milan, Italy, 2019 - [c4]Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, Daniele Ielmini:
In-memory solution of linear systems with crosspoint arrays without iterations. DRC 2019: 215-216 - [c3]Nicola Polino, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage. ESSDERC 2019: 126-129 - [c2]Erika Covi, Daniele Ielmini, Y.-H. Lin, Wei Wang, Tommaso Stecconi, Valerio Milo, Alessandro Bricalli, Elia Ambrosi, Giacomo Pedretti, Tseung-Yuen Tseng:
A Volatile RRAM Synapse for Neuromorphic Computing. ICECS 2019: 903-906 - 2018
- [c1]Valerio Milo, Giacomo Pedretti, Mario Laudato, Alessandro Bricalli, Elia Ambrosi, Stefano Bianchi, Elisabetta Chicca, Daniele Ielmini:
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks. ISCAS 2018: 1-5
Coauthor Index
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