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Lis K. Nanver
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2020 – today
- 2021
- [c14]Lovro Markovic, Tihomir Knezevic, Lis K. Nanver, Tomislav Suligoj:
Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer. MIPRO 2021: 64-69
2010 – 2019
- 2019
- [c13]Tihomir Knezevic
, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Ahmed Elsayed, Jan F. Dick, Jörg Schulze:
Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C. ESSDERC 2019: 242-245 - [c12]Tihomir Knezevic
, Tomislav Suligoj, Lis K. Nanver:
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. MIPRO 2019: 24-29 - [c11]Max Krakers
, T. Kneevic, Lis K. Nanver:
Reverse breakdown and light-emission patterns studied in Si PureB SPADs. MIPRO 2019: 30-35 - 2018
- [c10]Lis K. Nanver:
An experimental view on PureB silicon photodiode device physics. MIPRO 2018: 1-6 - [c9]Tihomir Knezevic
, Lis K. Nanver, Ivana Capan
, Tomislav Suligoj:
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures. MIPRO 2018: 12-17 - 2017
- [c8]Tihomir Knezevic
, Lis K. Nanver, Tomislav Suligoj:
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions. MIPRO 2017: 72-76 - 2016
- [c7]Vishal Agarwal, Anne-Johan Annema, Satadal Dutta
, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta
:
Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs. ESSDERC 2016: 264-267 - 2013
- [c6]Giulia Piccolo, Amir Sammak, Raymond J. E. Hueting, Jurriaan Schmitz
, Lis K. Nanver:
Role of junction depth in light emission from silicon p-i-n leds. ESSDERC 2013: 119-122 - [c5]Negin Golshani, Vahid Mohammadi, Siva Ramesh, Lis K. Nanver:
High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers. ESSDERC 2013: 210-213 - 2012
- [j7]Lei Shi, Stoyan N. Nihtianov, Sha Xia, Lis K. Nanver, Alexander Gottwald
, Frank Scholze:
Electrical and Optical Performance Investigation of Si-Based Ultrashallow-Junction p+-n VUV/EUV Photodiodes. IEEE Trans. Instrum. Meas. 61(5): 1268-1277 (2012) - [c4]Agata Sakic, Lin Qi, Tom L. M. Scholtes, Johan van der Cingel, Lis K. Nanver:
Epitaxial growth of large-area p+n diodes at 400 ºC by Aluminum-Induced Crystallization. ESSDERC 2012: 145-148 - [c3]Lei Shi, Stoyan N. Nihtianov, Frank Scholze, Lis K. Nanver:
Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. IECON 2012: 3952-3957 - [c2]Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver:
Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions. MIPRO 2012: 36-41 - 2011
- [c1]Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver:
Optimization of the perimeter doping of ultrashallow p+-n--n+ photodiodes. MIPRO 2011: 44-48
2000 – 2009
- 2009
- [j6]Lis K. Nanver, Hugo Schellevis, Tom L. M. Scholtes, Luigi La Spina, Gianpaolo Lorito, Francesco Sarubbi, Viktor Gonda
, Milos Popadic, Koen Buisman
, Leo C. N. de Vreede, Cong Huang, Silvana Milosavljevic, Egbert J. G. Goudena:
Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling. IEEE J. Solid State Circuits 44(9): 2322-2338 (2009) - 2006
- [j5]W. C. Edmund Neo, Yu Lin, Xiaodong Liu, Leo C. N. de Vreede, Lawrence E. Larson, Marco Spirito, Marco J. Pelk, Koen Buisman
, Atef Akhnoukh, Anton de Graauw, Lis K. Nanver:
Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks. IEEE J. Solid State Circuits 41(9): 2166-2176 (2006) - 2005
- [j4]Nebojsa Nenadovic, V. Cuoco, S. J. C. H. Theeuwen, Lis K. Nanver, Hugo Schellevis, G. Spierings, H. F. F. Jos, J. W. Slotboom:
Electrothermal characterization of silicon-on-glass VDMOSFETs. Microelectron. Reliab. 45(3-4): 541-550 (2005) - 2004
- [j3]Nebojsa Nenadovic, Slobodan Mijalkovic, Lis K. Nanver, Lode K. J. Vandamme, Vincenzo d'Alessandro
, Hugo Schellevis, Jan W. Slotboom:
Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors. IEEE J. Solid State Circuits 39(10): 1764-1772 (2004) - 2003
- [j2]Marco Spirito, Leo C. N. de Vreede, Lis K. Nanver, Stephan Weber, Joachim N. Burghartz:
Power amplifier PAE and ruggedness optimization by second-harmonic control. IEEE J. Solid State Circuits 38(9): 1575-1583 (2003) - 2001
- [j1]Wibo D. van Noort, Leo C. N. de Vreede, H. F. F. Jos, Lis K. Nanver, Jan W. Slotboom:
Reduction of UHF power transistor distortion with a nonuniform collector doping profile. IEEE J. Solid State Circuits 36(9): 1399-1406 (2001)
Coauthor Index
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