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2020 – today
- 2023
[j7]Jiayang Yu, Jixin Chen
, Peigen Zhou, Huanbo Li, Zuojun Wang, Zekun Li, Zhe Chen, Pinpin Yan, Debin Hou, Hao Gao, Wei Hong:
A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS. IEEE J. Solid State Circuits 58(2): 332-344 (2023)- [j6]Zekun Li, Jixin Chen, Huanbo Li, Jiayang Yu, Yuxiang Lu, Rui Zhou, Zhe Chen, Wei Hong:
A 220-GHz Sliding-IF Quadrature Transmitter and Receiver Chipset for High Data Rate Communication in 0.13-µm SiGe BiCMOS. IEEE J. Solid State Circuits 58(7): 1913-1927 (2023) - 2022
- [j5]Huanbo Li, Jixin Chen, Peigen Zhou, Debin Hou, Wei Hong:
A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique. Sci. China Inf. Sci. 65(4) (2022) - [j4]Huanbo Li, Jixin Chen, Debin Hou, Zekun Li, Rui Zhou, Zhe Chen, Pinpin Yan, Wei Hong:
W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication. IEEE J. Solid State Circuits 57(9): 2685-2701 (2022) - [j3]Long Wang, Jixin Chen, Debin Hou, Huanbo Li, Zekun Li, Yu Xiang, Xiaojie Xu, Wei Hong:
A Variable Gain Power Amplifier Based on Switched-Capacitor Array With Stable Linearity. IEEE Trans. Circuits Syst. II Express Briefs 69(2): 289-293 (2022) - [c2]Zekun Li, Jixin Chen, Jiayang Yu, Huanbo Li, Zichun Zheng, Rui Zhou, Peigen Zhou, Zhe Chen, Wei Hong:
A 220 GHz Sliding-IF Quadrature Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe BiCMOS. CICC 2022: 1-2 - 2021
- [j2]Huanbo Li, Jixin Chen, Debin Hou, Zekun Li, Zuojun Wang, Wei Hong:
A High-Linearity Adaptive-Bias SiGe Power Amplifier for 5G Communication. IEEE Trans. Circuits Syst. II Express Briefs 68(8): 2770-2774 (2021) - [c1]Huanbo Li, Jixin Chen, Debin Hou, Zekun Li, Rui Zhou, Wei Hong:
A 94GHz Scalable 2 × 2 Phased-Array Receiver in SiGe BiCMOS for High Data-Rate Communication. CICC 2021: 1-2 - 2020
- [j1]Huanbo Li, Jixin Chen, Debin Hou, Wei Hong:
A W-Band 6-Bit Phase Shifter With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS. IEEE Trans. Circuits Syst. II Express Briefs 67-II(10): 1839-1843 (2020)
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