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Jeong-Don Lim
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2020 – today
- 2022
- [c6]Dae-Hyun Kim, Byungkyu Song, Hyun-A. Ahn, Woongjoon Ko, Sung-Geun Do, Seokjin Cho, Kihan Kim, Seung-Hoon Oh, Hye-Yoon Joo, Geuntae Park, Jin-Hun Jang, Yong-Hun Kim, Donghun Lee, Jaehoon Jung, Yongmin Kwon, Youngjae Kim, Jaewoo Jung, Seongil O, Seoulmin Lee, Jaeseong Lim, Junho Son, Jisu Min, Haebin Do, Jaejun Yoon, Isak Hwang, Jinsol Park, Hong Shim, Seryeong Yoon, Dongyeong Choi, Jihoon Lee, Soohan Woo, Eunki Hong, Junha Choi, Jae-Sung Kim, Sangkeun Han, Jong-Min Bang, Bokgue Park, Jang-Hoo Kim, Seouk-Kyu Choi, Gong-Heum Han, Yoo-Chang Sung, Wonil Bae, Jeong-Don Lim, Seungjae Lee, Changsik Yoo, Sang Joon Hwang, Jooyoung Lee:
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process. ISSCC 2022: 448-450 - 2020
- [c5]Doo-Hyun Kim, Hyunggon Kim, Sung-Won Yun, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung-Hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kangbin Lee, Minseok Kim, Joonsoo Kwon, Jonghoo Jo, Sehwan Park, Jiyoon Park, Jisoo Cho, Sohyun Park, Garam Kim, Jinbae Bang, Heejin Kim, Jongeun Park, Deokwoo Lee, Seonyong Lee, Hwajun Jang, Hanjun Lee, Donghyun Shin, Jungmin Park, Jungkwan Kim, Jongmin Kim, Kichang Jang, II Han Park, Seung Hyun Moon, Myung-Hoon Choi, Pansuk Kwak, Joo-Yong Park, Youngdon Choi, Sanglok Kim, Seungjae Lee, Dongku Kang, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Jung-Hwan Choi, Sangjoon Hwang, Jaeheon Jeong:
13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. ISSCC 2020: 218-220
2010 – 2019
- 2018
- [c4]Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-Min Joe, Joonsuc Jang, Seungbum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Hanjun Lee, Min-Seok Kim, Seonyong Lee, SeonGeon Lee, Jinbae Bang, Dongjin Shin, Hwajun Jang, Deokwoo Lee, Nahyun Kim, Jonghoo Jo, Jonghoon Park, Sohyun Park, Youngsik Rho, Yongha Park, Hojoon Kim, Cheon An Lee, Chungho Yu, Young-Sun Min, Moosung Kim, Kyungmin Kim, Seunghyun Moon, Hyun-Jin Kim, Youngdon Choi, YoungHwan Ryu, Jinwon Choi, Minyeong Lee, Jungkwan Kim, Gyo Soo Choo, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Ki-Tae Park, Kyehyun Kyung:
A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput. ISSCC 2018: 340-342 - 2015
- [c3]Hyun-Jin Kim, Jeong-Don Lim, Jang-Woo Lee, Dae-Hoon Na, Joon-Ho Shin, Chae-Hoon Kim, Seungwoo Yu, Ji-Yeon Shin, Seon-Kyoo Lee, Devraj Rajagopal, Sang-Tae Kim, Kyeong-Tae Kang, Jeong-Joon Park, Yongjin Kwon, Min-Jae Lee, Sunghoon Kim, Seunghoon Shin, Hyunggon Kim, Jin-Tae Kim, Ki-Sung Kim, Han-Sung Joo, Chanjin Park, Jae-Hwan Kim, Man-Joong Lee, Do-Kook Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip. ISSCC 2015: 1-3 - 2011
- [j1]Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction. IEEE J. Solid State Circuits 46(1): 107-118 (2011) - [c2]Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, Si-Hong Kim, Yun-Seok Yang, Dae-Hyun Kim, Sang-Hyup Kwak, Ho-Seok Seol, Chang-Ho Shin, Min-Sang Park, Gong-Heom Han, Byeong-Cheol Kim, Yong-Ki Cho, Hye-Ran Kim, Su-Yeon Doo, Young-Sik Kim, Dong-Seok Kang, Young-Ryeol Choi, Sam-Young Bang, Sun-Young Park, Yong-Jae Shin, Gil-Shin Moon, Cheol-Goo Park, Woo-Seop Kim, Hyang-Ja Yang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW. ISSCC 2011: 498-500 - 2010
- [c1]Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction. ISSCC 2010: 434-435
Coauthor Index
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