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2020 – today
- 2025
[c9]Shruti Pathak, Aarti Rathi, Abhisek Dixit, P. Srinivasan, Oscar H. Gonzalez:
Impact of Hot-Carrier Degradation on Flicker Noise (1/f) in 45-nm PD-SOI Floating-Body NFETs. IRPS 2025: 1-6- [c8]Hao Yu, R. ElKashlan, Meng-Che Tsai, Yi Yang, Mamoun Guenach, Ying-Chun Kuo
, Sachin Yadav, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, D. Xiao, Claude Desset, AliReza Alian, Uthayasankaran Peralagu, V. Afans'ev, T.-L. Wu, Bertrand Parvais, Nadine Collaert:
Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. IRPS 2025: 1-6 - [c7]Aarti Rathi, Barry J. O'Sullivan, R. ElKashlan, B. Kazemi Esfeh, Arturo Sibaja Hernandez, Hao Yu, AliReza Alian, Sachin Yadav, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. IRPS 2025: 71 - [c6]Yi Yang, Hao Yu, Meng-Che Tsai, Wei-Tung Lin, Ying-Chun Kuo, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert, Tian-Li Wu:
Toward Understanding Stability of RF MIS-HEMTs Under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. IRPS 2025: 73 - 2024
- [c5]Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, Aarti Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS 2024: 1-9 - 2023
- [c4]Aarti Rathi, Abhisek Dixit, Naga Satish, P. Srinivasan, Fernando Guarin:
Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications. IRPS 2023: 1-6 - 2022
- [c3]Aarti Rathi, Abhisek Dixit, P. Srinivasan, Oscar Huerta-Gonzalez, Fernando Guarin:
RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications. IRPS 2022: 4 - [c2]Asifa Amin, Aarti Rathi, Sujit K. Singh, Abhisek Dixit, Oscar Huerta-Gonzalez, P. Srinivasan, Fernando Guarin:
Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications. IRPS 2022: 11 - 2021
- [c1]Aarti Rathi, P. Srinivasan, Fernando Guarin, Abhisek Dixit:
Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications. IRPS 2021: 1-6
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