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Joseph Casamento

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2020 – today

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2024
[c2]
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Quyen Tran, John Hayden, Joseph Casamento, Jon-Paul Maria, Thomas N. Jackson:
Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel. DRC 2024: 1-2
2023
[c1]
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Joseph Casamento, Kazuki Nomoto, Thai-Son Nguyen, Hyunjea Lee, Chandrasekhar Savant, Lei Li, Austin Hickman, Takuya Maeda, Yu-Tsun Shao, Jimy Encomendero, Ved Gund, Timothy Vasen, Shamima Afroz, Daniel J. Hannan, David A. Muller, Huili Grace Xing, Debdeep Jena:
AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality. BCICTS 2023: 132-136

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