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R. Arinero

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2010 – 2019

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2011
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R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné:
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51(12): 2093-2096 (2011)
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W. Hourani, B. Gautier, Liviu Militaru, D. Albertini, A. Descamps-Mandine, R. Arinero:
Influence of the surrounding ambient on the reliability of the electrical characterization of thin oxide layers using an atomic force microscope. Microelectron. Reliab. 51(12): 2097-2101 (2011)

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