A 29-Gb/mm2 1-Tb 3-b/Cell 3-D Flash Memory With CMOS Direct Bonded Array (CBA) Technology.

Thu, 01 Jan 2026 00:00:00 +0100

Kosuke Yanagidaira , Mario Sako , Yasuhiro Hirashima, Yumi Higashi, Yutaka Shimizu, Takeshi Nakano, Yusuke Ochi, Hiroaki Yamada, Nobushi Matsuura, Akihiro Imamoto, Kazuaki Kawaguchi, Koji Tabata, Hiroaki Hoshino, Takeshi Hioka, Shigehito Saigusa, Hiroki Date, Masaki Unno, Jumpei Sato, You Kamata, Takahiro Shimizu, Akio Sugahara, Taira Shibuya, Atsushi Okuyama, Junji Yamada , Takatoshi Minamoto, Hardwell Chibvongodze, Naoki Ojima, Hiroshi Sugawara, Masahiro Kano, Jang-Woo Lee, Hiroyuki Mizukoshi, Ryuji Yamashita, Kensaku Abe, Naohito Morozumi, In-Soo Yoon, Takuya Ariki , Jong Hak Yuh, Khin Htoo, Yosuke Kato, Yoshihiro Oyama, Yen-Lung Jason Li, Yoshihisa Watanabe, Toshiyuki Kouchi , Koji Hosono:
A 29-Gb/mm² 1-Tb 3-b/Cell 3-D Flash Memory With CMOS Direct Bonded Array (CBA) Technology. IEEE J. Solid State Circuits 61(1): 237-249 (2026)