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2010 – 2019
- 2018
[j11]Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, Cedric Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage:
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. Microelectron. Reliab. 88-90: 418-422 (2018)- 2014
- [j10]Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini
, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni:
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectron. Reliab. 54(9-10): 2248-2252 (2014) - [c1]Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage:
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. ESSDERC 2014: 381-384 - 2013
- [j9]Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso:
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. Microelectron. Reliab. 53(9-11): 1476-1480 (2013)
2000 – 2009
- 2009
- [j8]Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui:
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectron. Reliab. 49(9-11): 1216-1221 (2009) - [j7]Michele Piazza, Christian Dua, Mourad Oualli, Erwan Morvan, Dominique Carisetti, Frédéric Wyczisk:
Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs. Microelectron. Reliab. 49(9-11): 1222-1225 (2009) - 2007
- [j6]Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua:
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. Microelectron. Reliab. 47(9-11): 1639-1642 (2007) - 2006
- [j5]A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul:
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectron. Reliab. 46(9-11): 1725-1730 (2006) - 2005
- [j4]A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, Sylvain L. Delage:
A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications. Microelectron. Reliab. 45(9-11): 1617-1621 (2005) - 2004
- [j3]A. Sozza, Christian Dua, A. Kerlain, C. Brylinski, Enrico Zanoni:
Long-term reliability of Ti-Pt-Au metallization system for Schottky contact and first-level metallization on SiC MESFET. Microelectron. Reliab. 44(7): 1109-1113 (2004) - [j2]A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl:
Reliability Investigation of Gallium Nitride HEMT. Microelectron. Reliab. 44(9-11): 1369-1373 (2004) - 2003
- [j1]Sylvain L. Delage, Christian Dua:
Wide band gap semiconductor reliability : Status and trends. Microelectron. Reliab. 43(9-11): 1705-1712 (2003)
Coauthor Index
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