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Takeshi Hamamoto
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2010 – 2019
- 2018
- [c5]Toru Sugiyama, Kohei Oasa, Yasunobu Saito, Akira Yoshioka, Takuo Kikuchi, Aya Shindome, Tatsuya Ohguro, Takeshi Hamamoto:
Evaluation methodology for current collapse phenomenon of GaN HEMTs. IRPS 2018: 3 - 2011
- [j9]Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama:
A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMs. IEEE J. Solid State Circuits 46(9): 2171-2179 (2011) - 2010
- [j8]Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama:
A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes. IEEE J. Solid State Circuits 45(1): 142-152 (2010) - [c4]Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama:
A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM. ISSCC 2010: 262-263
2000 – 2009
- 2009
- [c3]Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama:
A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes. ISSCC 2009: 464-465 - 2006
- [j7]Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Tomoaki Shino, Yoshihiro Minami, Hiroomi Nakajima, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe, Shuso Fujii, Tohru Furuyama:
Design of a 128-mb SOI DRAM using the floating body cell (FBC). IEEE J. Solid State Circuits 41(1): 135-145 (2006) - 2005
- [j6]Kiyohiro Furutani, Takeshi Hamamoto, Takeo Miki, Masaya Nakano, Takashi Kono, Shigeru Kikuda, Yasuhiro Konishi, Tsutomu Yoshihara:
Highly Flexible Row and Column Redundancy and Cycle Time Adaptive Read Data Path for Double Data Rate Synchronous Memories. IEICE Trans. Electron. 88-C(2): 255-263 (2005) - 2004
- [j5]Takeshi Hamamoto, Kiyohiro Furutani, Takashi Kubo, Satoshi Kawasaki, Hironori Iga, Takashi Kono, Yasuhiro Konishi, Tsutomu Yoshihara:
A 667-Mb/s operating digital DLL architecture for 512-Mb DDR SDRAM. IEEE J. Solid State Circuits 39(1): 194-206 (2004) - 2003
- [c2]Takehito Utsuro, Takashi Horiuchi, Takeshi Hamamoto, Kohei Hino, Takeaki Nakayama:
Effect of Cross-Language IR in Bilingual Lexicon Acquisition from Comparable Corpora. EACL 2003: 355-362 - 2002
- [c1]Takehito Utsuro, Takashi Horiuchi, Yasunobu Chiba, Takeshi Hamamoto:
Semi-automatic Compilation of Bilingual Lexicon Entries from Cross-Lingually Relevant News Articles on WWW News Sites. AMTA 2002: 165-176 - 2000
- [j4]Takashi Kono, Takeshi Hamamoto, Katsuyoshi Mitsui, Yasuhiro Konishi, Tsutomu Yoshihara, Hideyuki Ozaki:
A precharged-capacitor-assisted sensing (PCAS) scheme with novel level controllers for low-power DRAMs. IEEE J. Solid State Circuits 35(8): 1179-1185 (2000) - [j3]Shigehiro Kuge, Tetsuo Kato, Kiyohiro Furutani, Shigeru Kikuda, Katsuyoshi Mitsui, Takeshi Hamamoto, Jun Setogawa, Kei Hamade, Yuichiro Komiya, Satoshi Kawasaki, Takashi Kono, Teruhiko Amano, Takashi Kubo, Masaru Haraguchi, Yoshito Nakaoka, Mihoko Akiyama, Yasuhiro Konishi, Hideyuki Ozaki, Tsutomu Yoshihara:
A 0.18-μm 256-Mb DDR-SDRAM with low-cost post-mold tuning method for DLL replica. IEEE J. Solid State Circuits 35(11): 1680-1689 (2000)
1990 – 1999
- 1998
- [j2]Takeshi Hamamoto, Masaki Tsukude, Kazutami Arimoto, Yasuhiro Konishi, Takayuki Miyamoto, Hideyuki Ozaki, Michihiro Yamada:
400-MHz random column operating SDRAM techniques with self-skew compensation. IEEE J. Solid State Circuits 33(5): 770-778 (1998) - 1996
- [j1]Takeshi Hamamoto, Yoshikazu Maroaka, Mikio Asakura, Hideyuki Ozaki:
Cell-plate-line/bit-line complementary sensing (CBCS) architecture for ultra low-power DRAMs. IEEE J. Solid State Circuits 31(4): 592-601 (1996)
Coauthor Index
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